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최현광,이선연,이제원,조관식,전민현 한국진공학회 2001 Applied Science and Convergence Technology Vol.10 No.3
MBE를 이용하여 GaAs위에 InAs 양자점을 성장시키고 Ga, As, In, As의 순서로 셔터를 교대로 열어주는 방식으로 3주기 반복하여 InGaAs 층을 성장시키고 그 위에 다시 GaAs층을 성장시킨 시료(시료번호: QDl)에 대하여 온도를 변화시키며 열처리를 수행한 후 그 광학적 특성을 분석하였다. 기존의 다른 그룹들의 연구결과처럼, InAs 양자점을 성장시키고 GaAs 에피층을 barrier층으로 성장시킨 경우, 열처리 온도가 증가함에 따라 발광피크는 단파장쪽으로 이동하는 것을 확인하였다. 반면에, InGaAs층을 포함하고 있는 QDI 시료의 경우, 발광 피크의 위치가 열처리 온도가 $600^{\circ}C$가 될 때까지는 장파장 쪽으로 이동하다가, 그 이상의 온도에서는 단파장 쪽으로 이동하는 현상을 관찰하였다. 또한, 발광피크의 반치폭도 열처리 온도가 증가하면서 감소하는 경향을 보이다가 다시 증가되는 경향을 보이고 있다. We have investigated the annealing effects on the optical properties of InAs quantum dots(QDs) capped with InGaAs(sample QDl), where InGaAs layer was deposited by opening Gallium, Arsenic, Indium and Arsenic shutters alternately with 3 periods, grown by molecular beam epitaxy. The emission wavelength of the sample of InAs QDs capped by GaAs barriers was observed to be blue-shifted as the annealing temperature was increased. On the other hand, the photoluminescence(PL) peak position of sample QD1 was observed to be red-shifted at the annealing temperature of up to $600^{\circ}C$ and, then, it was found to be blue-shifted at temperatures ranging from 700 to $800^{\circ}C$. The full width at half maximum values of sample QD1 subjected to annealing treatments show different behavior compared to typical InAs quantum dot structures.
최현광,황숙현,전민현,Syoji Yamada 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.4
The growth and characterization of In_(0.5)Ga_(0.5)As/In_(0.5)Al_(0.5)As narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface In_(0.5)Ga_(0.5)As channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm In_(0.5)Al_(0.5)As cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.
Structural and Optical Properties of InAlAs Graded Buffers on GaAs (001) for Unipolar Devices
최현광,조중석,전민현,Minhyon Jeon,정연길 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
We investigate the structural and the optical properties of InAlAs step graded buffers (SGBs) grown on GaAs (001). Metamorphic InAlAs SGBs layers with various indium contents are grown on semi-insulating GaAs (001) substrates by means of molecular beam epitaxy. We change various growth parameters, such as the step number, the step thickness and the total SGB thickness, to optimize the graded buffer for unipolar device applications. The samples are characterized using atomic force microscopy, X-ray diffraction and photoluminescence (PL). Metamorphic InAlAs SGBs above intermediate contents reveal effectiveness for strain relaxation of the metamorphic InAlAs layers; it should be noted that the transport properties of unipolar devices are rather sensitive to the strain. The strain and the mosaicity variations of the metamorphic InAlAs layers depend on the total SGB thickness and the thickness of each step. The PL emissions of the metamorphic InAlAs layers with intermediate contents can support a mechanism for an alloy-hardening gradient.
Synthesis of Sulfur-doped Graphene by using Near-infrared Chemical-vapor Deposition
최현광,조형호,황숙현,전민현,김종호 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.11
We here introduced a simple, but efficient, sulfur-doping method applying delta-function-like doping profiles by using near-infrared chemical-vapor deposition. The thermally decomposed sulfur was found to play the role of the n-type dopant, and hydrogen in hydrosulfide gas acted as the reducing agent corresponding to the oxygen functional groups during the growth of the graphene sheet. The doping mechanism by sulfur atoms as a substitutional impurity requires further study due to the increase in the number of unintentional defects in the crystalline graphene.
김웅진,최현광,하혜원,안혜진,강현주 순천향대학교 기초과학연구소 2014 순천향자연과학연구 논문집 Vol.20 No.2
The purpose of this study was to investigate the effects of gender difference in auditory feedback on peak torque and total work of the quadriceps and hamstrings muscle. All testing was performed on the Humac Norm(USA) isokinetic testing and rehabilitation system. Muscle function were obtained at 60°/sec for peak torque and 180°/sec for total work. Six male(age= 21.8±2.2yrs; ht= 177.0±9.6cm; wt= 72.8±14.1kg; BMI= 23.1±2.0kg/m2) and six female((age= 20.5±0.8yrs; ht= 163.7±4.6cm; wt= 56.5±5.0kg; BMI= 21.1±2.1kg/m2) were tested under the following conditions: (1) non-feedback(NF), (2) same gender voice feedback (SGVF), (3) different gender voice feedback(DGVF). As a result, muscle function value following treatment revealed that subjects generated greater peak torque when DGVF and greater total work when SGVF. This study suggests that the auditory feedback for various age groups should be examined based on mutiple joint for the future study.
Electroactive Polymer Actuator Based on a Reduced Graphene Electrode
김기홍,최현광 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.5
We report an electroactive polymer (EAP) actuator using a reduced graphene electrode for a ionicpolymer-metal composite actuator. Aqueous-reduced graphene is deposited to both sides of theionic polymer membranes by using a simple inkjet printing process. The electrical and the opticalproperties of the reduced graphene were evaluated by using a four-point probe system, Ramanspectroscopy, and Fourier-transform infrared attenuated total reflection spectroscopy. The actuatorproperties were evaluated from the curvatures of the ionic polymer graphene composite (IPGC) forvarious input voltages. From the results, we propose a new and simple isosceles trapezoidal elementmodel for analyzing the relations among the input voltage, thickness, and curvature of IPGC.