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반응성 가스 분위기하에서 이온빔을 이용한 폴리머 표면의 친수성 증대 및 세라믹표면개질
최원국,손용배,장홍규,정형진,고석근 한국마이크로전자및패키징학회 1996 하이브리드마이크로일렉트로닉스 Vol.3 No.1
Wettability of polymeric surfaces (PC, PET, PMMA, and PTFE) to triple distilled water are improved by Ar^+ ion irradiation in various reactive gases (H₂, O₂and N₂) partial pressure. The wettability of the polymers are changed with Ar^+ ion dose from 10^(14) to 1 ×10^(17) ions /㎠ and with various reactive gas environments. The ability of wetting angle reduction was the same as the reactivity of the gases (O₂$gt; N₂$gt; H₂) which were introduced near the irradiating polymer surfaces. The formation of hydrophilic group on the polymer surface is confirmed by analyses of C1s, O1s and N1s XPS spectra. Adhesion between A1 metal and modified polymeric surfaces of PC and PTFE is greatly improved and was tested by a Scotch tape test and by tensile test. The enhancement of wettability is proved to be caused by increase of polar force in surface energy. Reaction mechanism among the energetic Ar^+ ions, polymer chains, and reactive gases are discussed by two-step reaction in which the first step is a formation of activated unstable polymer chains by ion irradiation and the second is a reaction between activated unstable polymer chains and reactive gases. The surface of AlN is irradiated with Ar^+ ion in oxygen environment. Newly formed AION layer is identified by XPS depth profiling. Adhesion between Cu and ion beam modified AlN has been examined by a scratch test.
Review of Low-Dimensional Nanomaterials for Blue-Light Emission
최원국 한국센서학회 2023 센서학회지 Vol.32 No.6
Low-dimensional (zero-dimensional (0-dim), 2-dimensional (2-dim)) nanoparticles, such as chalcogenide compound semiconductors,III-V semiconductors, transition metal dichalcogenides (TMDs), II-VI semiconductors, nanocarbons, hybrid quantum dots (QDs), andperovskite QDs (PQDs), for which blue light emission has been observed, are reviewed. Current synthesis and device fabrication technologiesas well as their prospective applications on next-generation quantum-dot-based light-emitting diodes are discussed.
Pd 촉매의 부분 산화 조절을 이용한 SnO$_2$박막 센서의 CH$_4$감도 변화 연구
최원국,조정,조준식,송재훈,정형진,고석근,Choi, W. K.,Cho, J.,Cho, J. S.,Song, J. H.,Jung, H. J.,Koh, S. K. 한국마이크로전자및패키징학회 1999 마이크로전자 및 패키징학회지 Vol.6 No.2
이온빔 보조 증착법을 이용하여 제작한 $SnO_2$박막을 기저 물질로한 가연성 센서에 catalyst로 ultra-thin Pd layer를 이온빔 스퍼터링으로 흡착시켰다. 가연성 기체의 센싱 메카니즘에서 Pd 촉매의 역할을 정확하게 조사하기 위해서 진공 및 공기 상에서 annealing 함으로서 Pd 촉매의 초기 산화 상태를 조절하였다. 촉매가 순수한 금속 Pd 클러스터 상태로 존재하는 $SnO_2$센서의 경우에는 PdO 클러스터가 있는 것에 비해 높은 감응성을 보였다. 이것은 PdO 클러스터가 표면 acceptor로 작용을 하는 것으로 생각되며 $SnO_2$로 부터 Pd sub-channel을 통해 전자를 받아 센서의 감도를 낮추고 응답시간을 늦추는 것으로 생각된다. A flammable gas sensor based on the $SnO_2$thin film deposited by the reactive ion assisted deposition was fabricated and ultra-thin Pd layer as catalyst was adsorbed at surface by ion beam sputtering. The initial oxidation states of Pd catalyst were controlled to investigate the role of Pd in the sensing process of inflammale gas sensor through annealing in air and vacuum respectively. The Pd catalyst existing in pure metallic state showed the sensitivity higher than that of PdO. The result might be closely related to the fact that PdO as a surface acceptor would receive electrons via Pd sub-channel from $SnO_2$, and thus which reduces the sensitivity and delay the response time.
UHV - LCVD 장치를 이용한 박막제작에 관한 연구 (Ⅰ) - 장치 제작을 중심으로 -
최원국(Won Kook Choi),윤덕주(Dug Ju Yun),공병인(Byung In Gong),김창현(Chang Hyun Kim),황정남(Chung Nam Whang),정광호(Kwang Ho Jeong) 한국진공학회(ASCT) 1993 Applied Science and Convergence Technology Vol.2 No.2
Si₃N₄와 SiO₂ 박막을 고순도로 생장시키기 위하여 UHV-LCVD 장치를 제작하였다. 이 장치는 CVD 반응실, 시료주입 장치, 가스주입 장치, 광여기를 위한 레이저 창, 질량분석 장치로 구성되어 있다. UHV-LCVD 는 low pressure, low vacuum CVD에 비해 제작상의 어려움이 따르나 초고진공 분위기에서 반응 가스의 양을 정확히 조절하여 고순도의 박막을 제작할 수 있었다. UHV-LCVD system was constructed for high quality silicon nitride thin film fabrication. This system consisted of a reaction chamber, an introduction chamber with sample load lock entry, a carbinet for gas manipulation controlling gas flow, a CO₂ laser and a Fourier transform mass spectrometer. Although the UHV-LCVD system construction was more sophisticated than low pressure CVD, highly pure thin films were fabricated by controlling gas mixing ratio and flow rate in ultra high vacuum surroundings.