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최선근,전용선,배선영,곽민근,허윤석,이건영,김세중,조영업,안승익,홍기천,신석환,김경래,우제홍 대한대장항문학회 2004 Annals of Coloproctolgy Vol.20 No.4
Purpose: The aim of this study was to clarify the clinicopathologic features in colorectal cancer with liver metastases and to evaluate their clinical significance. Methods: From August 1996 to April 2002, 545 patients, who underwent radical surgery for primary colorectal cancers, were analyzed retrospectively. Results: Colorectal cancers with and without synchronous liver metastases at the time of the surgery were 36 and 509 cases, respectively. Of the 509 cases without metastases, 34 cases had metachronous liver metastases by April 2002, but the others did not. Serosal, vascular, perineural, and lymph node invasions, as well as increased preoperative CEA levels, were more frequently observed in those with synchronous liver metastases than it was in those without metastases (P<0.05). According to multivariate analyses, lymph node invasion was statistically significant as an independent variable in those with synchronous metastases (P=0.009). Serosal, vascular, and lymph node invasions, increased preoperative CEA levels, DNA ploidy, and positive lateral resection margins were more frequently observed in those with metachronous liver metastases than it was in those without metastases (P<0.05). According to multivariate analyses, vascular invasion was statistically significant in those with metachronous metastases (P=0.015). Conclusions: Lymph node and vascular invasions appear to be significant determinants for synchronous and metachronous liver metastases in colorectal cancers. Therefore, close observation and careful postoperative follow-up is needed for such patients.
崔善根 漢陽大學校 基礎科學硏究所 1981 基礎科學論文集 Vol.1 No.-
Direct measurements of dislocation velocities in gallium arsenide single crystals show that the velocity of β-dislocations is greatly affected by donor impurities and much smaller than that of α-dislocations. The effect of impurity doping on the dislocation velocity is supposed to come from the reduction of double kink formation energy due to the charge on dislocation. The electronic level associated with α-dislocation is supposed to lie in the conduction band or very near the bottom of the conduction hand. On the other hand, the level of β-dislocation is supposed to lie in the energy gap.
崔善根 漢陽大學校 1979 論文集 Vol.13 No.-
The average velocities of 60 °-dislocations in p-type silicon single crystals have been measured by Stein and Low method. The stress dependence of dislocation velocities is described as υ∝?? at a given temperature over the stress range of 0.5∼3.5 kg/mm². Our experimental results of stress dependence of dislocation velocities are compared with the theoretical curves based of the abrupt kink model by Ninomiya et al. It has been found that experimental values of dislocation velocities were lower than the estimated values on the basis of the abrupt kink model.
Dislocation Velocities in Indium Arsenide Single Crystals
최선근 대한금속재료학회(대한금속학회) 1976 대한금속·재료학회지 Vol.14 No.1
不純物을 도푸하지 않은 n型 의 InAs 單結晶 중의 轉位速度를 二重腐蝕法에 의하여 측정하였다. 一定溫度下의 轉位速度와 分解剪斷應力 관계를 Ninomiya들에 의한 abrupt kink model과 Celli들에 의한 dragging point model에 의한 理論曲線들과 비교 검토한 결과 우리의 實驗結果가 後者의 理論에 의해서 더 잘 설명됨이 판명되었다. Velocities of α and β-dislocation in undoped n-type InAs single crystals have been measured by double etch technique. The measured velocity-stress behaviors are compared with theoretical curves based on the abrupt kink model by Ninomiya et al. and the dragging point model by Celli et al. Our experimental results are found to be in better agreement with the latter than the former model.
최선근 대한금속재료학회(대한금속학회) 1975 대한금속·재료학회지 Vol.13 No.2
지금까지 Si 單結晶 중의 轉位速度에 관한 몇 가지 硏究結果가 報告되었다. 그러나 轉位速度의 應力依存性에 관한 결과가 一致하지 않을 뿐만 아니라 60°轉位에 대한 결과가 적으며, 特히 元素半導體와 化合物半導體(III-V 族) 중의 轉位速度에 대한 不純物效果에 관한 見解가 一致하지 않고 있다. 著者는 一連의 實驗에 의해서 Si 單結晶 중의 轉位速度에 대한 資料를 補完하고, 不純物效果를 究明할 目的으로 第一段階로서 n 型 Si 單結晶 중의 60°轉位速度를 螺旋轉位와 分離하여 Stein-Low 法에 의해서 측정하였다. 그 결과 轉位遠度 v의 應力(τ)依存性은 v∝τ^m로 주어지며, 그의 溫度(T) 依存性은 v=v(τ)exp(-E/kT)로 주어짐을 알았으며, 分解剪斷應力 2 ㎏/㎟ 에 대한 轉位運動의 活性化에너지 E로서 1.5 eV를 얻었다. The average velocities of 60°-dislocations in silicon single crystals have been measured be Stein and Low method. The stress dependence of dislocation velocities is described as v∝τ^m at a given temperature over the stress range of 0.5∼5 ㎏/㎟. It was observed that stress exponent m depended on temperature. The temperature dependence of dislocation velocities is described as v∝exp (-E/kT) with activation energy of 1.5 electron volt at the resolved shear stress of 2 ㎏/㎟.