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조화석 嶺南大學校附設 基礎科學硏究所 1989 基礎科學硏究 Vol.9 No.-
The LDOSs and valence electron occupancies of interface atoms were obtained, and the valence band discontinuity was calculated. The interface was formed by the Ge chemisorbed on the As and Ga terminated GaAs (001) surface.
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Silicon/Silicide/Silicon 구조의 전자 구조
趙和錫 嶺南大學校 基礎科學硏究所 1991 基礎科學硏究 Vol.11 No.-
We calculated the electronic structure of Si/NiSi₂/Si using the tight-binding method and recursion method. We show that the Fermi energy of a metal layer is greater than the bulk Fermi energy and the density of states are changed by quantum size effercts. The results suggest that the ballistic charge transport occurs through the metal base because of suitable electronic states of the modified Si bands in a metal layer with the energy near the bulk Si conduction band minimum.
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제일 원리에 의한 셀레늄내의 셀레늄의 텔러륨의 핵사중극자 상호작용의 계산
조화석 嶺南大學校 基礎科學硏究所 1995 基礎科學硏究 Vol.15 No.-
We have carried out first-principle Hartree-Fock Cluster investigations on the electronic structures of the systems, crystalline selenium and tellurium impurity tin selenium to study the nuclear quadrupole interaction parameters for ?? and ?? nuclei in selenium[1]. For our investigations, we have used the Gaussian 92 set of programs [2]. Also, for our investigaions, to avoid the need for excessive computational time, we have included all electrons on the central and nearest neighbour atoms including core electrons, so as incorporate Sternheimer antishielding effects, while for the rest of the atoms we have included only the valence electrons and appropriate pseudopotetials for this procedure.
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趙和錫 울산대학교 1978 연구논문집 Vol.9 No.1
Ⅳ族 半導體內에 있는 1價로 이온화된 不純物이 勵起狀態에서 外力을 받았을때 에너지分離와 相對强度를 理論的으로 硏究한다. 群論을 適用해서 주어진 吸收線의 應力에의한 相對强度를 求한다. ? 遷移의 成分比는 두개의 實數 parameter에 관계됨을 안다. 하나는 〈111〉의 單一軸方向으로 壓縮되었을때의 量으로 結定되고, 다른하나는 〈100〉와 〈110〉로 壓縮되었을때 結定된다. This paper presents a theoretical Study of the relative intensities and energy splittings of the excitation lines fo a single-hole acceptor in a group-ⅣSemiconductor. Group theoretical methods are used to give the relative intensities of the stress-induced components of a given absorption line. The theory reveals that the ratios of the intensities fo the components of a ? transition depend upon two real parameters. One of these parameters may be determined unambiguously from a measurement with uniaxial compression along a <111> direction. The magnitude of the other may be found from measurements with compression parallel to <100> and <110>.
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조화석 慶北大學校 生産技術硏究所 1970 生産技術 Vol.4 No.-
Following the SU(3) unitary symmetry in the hadron's interactions, we have formulated a mass formula of hadrons by applying the Wigner-Eckart theorem for its supermultiplet. In general, the mass formula obtained is equivalent to the Gell-Mann-Okubo's formula, (abbreviated G-O formula) but in a case of the vector meson octet, a alternative mass-combination-rule 2m^2_k*=3m_p^2-m_w^2 has been derived in stead of 4m^2_k*=3m_w^2+m_p^2 in the G-O formula, and derived a relationship 2(m^2_p--m^2_p+)=m^2_k*--m^2_k*0+m^2_k*0-m^2_k*+ between the mass differences of the members of the isomultiplets which make up the same unitary multiplets. It is shown that the two new formulas are in fairly good agreement with a recent experiment.
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LCAO방법에 의한 BCC 금속(Mo) (100)면의 전자상태
조화석 울산대학교 1980 연구논문집 Vol.11 No.1
Mo (100)표면의 전자구조를 LCAO방법을 사용해서 계산하였다. 표면상태와 공명현상이 2DBZ의 대칭이 가장 많은 방향을 따라 유사하게 된다. 표면 가까이의 국소상태의 밀도를 계산하고 표면상태 때문에 생기는 상태밀도를 논의한다. 중요한 표면현상이 Fermi에너지 아래 0-0.1 Ryd 범위에서 나타남을 보인다. 그리고 실험치와 잘 맞는다. The electronic structure of the ideal (100) of Mo is calculated using a parametrized linear combination of atomic orbitals. Surface states and resonances are nearly identified along the high symmetry directions of the two dimensional Brillouin zone. The local density of states near the surface is presented and the main modifications due to the surface states are discussed. Significant surface features are found in the range 0-0.01 Ryd below the Fermi energy in agreement with the experimental results.
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金玟機,吳榮基,朴辰鎬,趙和錫 嶺南大學校 基礎科學硏究所 1990 基礎科學硏究 Vol.10 No.-
We investigated the atomic structure and the density of state of the rearrangered GaAs(001) surface from the surface layer to the third layer. The geometry is calculated by the energy minimization by the described formula. The result is that displacement of the first layer is asymmetric with no twist, the dimer angle is about 7˚.
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실리콘 (100) 표면에서의 전기장 기울기에 대한 계산
오영기,조화석 嶺南大學校 基礎科學硏究所 1995 基礎科學硏究 Vol.15 No.-
We have presented a theoretical study that the electric field gradient(EFG) of the Si(100)surface can be calculated using the Hartree-Fock cluster technique employing the Gaussian basis-set. We showed that the electric field gradients of the ideal and the (2x1) reconstructed Si(100) surfaces are 0.566 and 0.387 x ?? esu/㎤, respectively, because they are different in bonding mechanism. With the surface atomic charges and the Mulliken populations of the molecular orbitals, we were able to explain the charge transfer and the bonding properties between the surface atom and the second-layered atom.
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오영기,박진호,조화석 嶺南大學校 基礎科學硏究所 1995 基礎科學硏究 Vol.15 No.-
The formation of Schottky barriers at metal/semiconductor interfaces has attracted much attention. We study the electronic properties of a NiSi₂/Si interfaces and discuss the recursion method and the self-consistent field calculation method. We have constructed a simple, precisely defined model of semiconductor interface in charge-equilibrium with metals. Numerical calculations reveal that the Schottky barrier heights are 0.52eV for A0type NiSi₂/Si(111) interface, 0.80eV for B-type, and 0.29eV for NiSi₂/ Si(001) interface, in agreement with experiments.
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金興植,尹錫吉,崔性洙,趙和錫 울산대학교 1979 연구논문집 Vol.10 No.1
고장력 알루미늄 합금의 잔류응력을 제거하기 위하여 종래의 고압 증기 대신 비등하는 trichloroethylene을 사용한 새로운 uphill quench 법을 연구하였다. 잔류응력을 제거하기 위한 최적조건을 찾기 위해 2024와 7075 알루미늄 합금봉을 사용하여 시편의 긁기열처리 조건 및 냉각수 온도를 변화시켜 실험하였다. 잔류응력이 제거되는 정도는 용체와 처리한 재료 내부의 잔류응력 상태에 따라 달라지나 용체와 처리한 재료를 용체화 처리후 즉시 비등하는 trichloroethylene에 uphill quench하고 인공시효처리를 할 때 잔류응력이 가장 잘 제거되었다. A new method of uphill quench using trichloroethylene instead of conventional high press vapor to reduce residual quenching stresses in aluminum alloy rods has been studied. Investigations were made on 2024 and 7075 alloy rods of various sizes with various quench and heat treatment procedures, in order to find the optimum conditions for relieving the residual stresses. The reduction of residual stresses was found to be a function of variables such as temperature rooting water, size and heat treatment history of specimen. The best result wasobtained when an uphill quench in boiling trichloroethylene followed by T-6 aging was made immediately after the solid solution treatment.
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