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Fabry-Perot 광필터용 유전체 다층막의 반사도 측정
정홍배 광운대학교 신기술연구소 1996 신기술연구소논문집 Vol.25 No.-
본 연구에서는 광섬유 Fabry-Perot 필터에 이용되는 다층막의 미러 코팅 유전체박막의 제작과 특성에 대해 고찰하였다. TiO_2와 SiO_2 박막으로 구성되는 유전체 다층막을 RF 마그네트론 스퍼터(magnetron sputter)로 1550nm의 파장 영역에서 63.8∼99.9%의 반사도를 갖도록 제작하였다. TiO_2 박막의 투과도 측정과 수정된 포락선(modified envelope) 해석에 의해 632.8nm의 파장에서 예측된 굴절율은 2.251이었고 측정값은 2.242로 잘 일치함을 확인하였다. 이러한 결과로부터 1550nm 파장에서 굴절율은 2.170으로 결정되었다. 미러 코팅한 다층막의 반사도는 11층의 경우는 97.6%이고 23층의 경우는 99.9%의 높은 반사도를 얻어 안정된 필터특성을 갖는 최적의 제작설계조건을 나타내었다. In this study, we investigated the fabrication and characteristics of the mirror coated dielectric multilayer film for a Fabry-Perot(FP) filter. The dielectric multilayers consisted of alternating layers of TiO_2 and SiO_2 film which has the reflectance of 63.8∼99.9% at the wavelength of 1550nm were fabricated by RF magnetron sputter system with the fiber thickness monitor system. The refractive index of TiO_2 single film derived from the modified envelope method was the expected value of 2.251 and it was conformed that the expected value of 2.251 were coincided with the measured value of 2.242 at λ=632.8nm. From the refractive index curve, the refractive index of TiO_2 film was expected 2.17 at a wavelength around 1550nm. The reflectance of the mirror coated multilayer having 11 layers and 23 layers were 97.6% and 99.9% at the wavelength of 1.55μm, respectively. As the results, we conclude that the above condition was the optimum fabrication design.
LICVD에 의해 생성된 수소가 주입된 비정질 실리콘의 박막 특성
정홍배 光云大學校 1985 論文集 Vol.14 No.-
LICVD에 의한 수고가 주입된 비정질 실리콘의 침전(deposition) 방법을 서술하고, 이 방법에 의한 박막의 여러가지 전자적 특성을 보고하였다. 결과로서, 성장율은 가스온도에 지수적으로 의존하고 가스온도는 레이저로부터 흡수된 에너지와 열 조건에 의해 손실된 에너지간의 정상 상태 균형에 의해 결정된다. 박막 특성은 평형 수소용량에 따르며 기판온도에 의해 우선적으로 조절된다.
單一트랩 準位로 된 칼코게나이드 유리質의 스위치機構 解釋
鄭鴻倍 光云大學校 1983 論文集 Vol.12 No.-
In this study, the analysis of threshold switching mechanism of chalcogenide glass were carried out. The analysis based on the space-charge overlapping were applied to the case of the single level of traps for electrons and holes, respectively. As the results, it's results were more closed experimental values than the case of exponential values than the case of exponential trap distribution, but it shows little a difference at on-state between theorical and experimental values. This results shows that the energy band of chalcogenide glass consists of single trap level and exponential trap distribution.
무기질 a-$Se_{75}Ge_{25}$ 박막을 이용한 네가티브형 포토레지스트의 특성연구
정홍배,허훈,김태완,Chung, Hong-Bay,Huh, Hoon,Kim, Tae-Wan 한국전기전자재료학회 1988 電氣電子材料學會誌 Vol.1 No.4
본 연구에서는 미세패턴 형성을 위한 비정질 $Se_{75}Ge_{25}$박막의 네가티브형 포토레지스토에 대하여 고찰하였다. 습식현상공정을 통해 대비도가 포지티브형인 경우 1.4였고 네가티브형인 경우 2.9를 나타내어 네가티브형인 경우가 미세선폭 조절능력이 더 우수함을 알 수 있었다. 표면사진으로부터 약 1.mu.m정도의 미세패턴을 얻었음을 확인할 수 있었다.
Ag가 도핑된 칼코게나이드 As40Ge10Se15S35 박막의 광분해, 광확산특성 및 홀로그래픽 격자형성
정홍배 대한전기학회 2006 전기학회논문지C Vol.55 No.10C
- In the present work, we investigated the photodissolution and photodiffusion effect on the interface of Ag/chalcogenide As40Ge10Se15S35 thin film by measuring the absorption coefficient, the optical density, the resistance change of Ag layer. It was found that the photodissolution/photodiffution ratio depends on the magnitude of photon energy absorbed in the chalcogenide thin film and the depth of photodiffution was proportional to the square root of the exposed time. Also, we have investigated the holographic grating formation with P-polarization states on chalcogenide As40Ge10Se15S35 thin film and As40Ge10Se15S35/Ag double layer structure thin film. Holographic gratings have been formed using He-Ne laser (632.8 nm) which have a smaller energy than the optical energy gap, Eg opt of the film, i. e., an exposure of sub-bandgap light (Eg opt) under P-polarization. As the results, we found that the diffraction efficiency on As40Ge10Se15S35/Ag double layer structure thin film was more higher than that on single As40Ge10Se15S35 thin film. Also, we obtained that the maximum diffraction efficiency was 0.27 %, 1,000 sec on As40Ge10Se15S35 (1 μm)/Ag (10 nm) double layer structure thin film by (P: P) polarized recording beam. It will offer lots of information for the photodoping mechanism and the analyses of chalcogenide thin films.
Ag Nanocrystal이 적용된 Ge<sub>0.5</sub>Se<sub>0.5</sub>-based ReRAM 소자의 Uniformity 특성 향상에 대한 연구
정홍배,김장한,남기현,Chung, Hong-Bay,Kim, Jang-Han,Nam, Ki-Hyun 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.8
The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.
정홍배,조원주,구상모,Chung Hong-Bay,Cho Won-Ju,Ku Sang-Mo 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.10
Chalcogenide Phase change memory has the high performance necessary for next-generation memory, because it is a nonvolatile memory with high programming speed, low programming voltage, high sensing margin, low power consumption and long cycle duration. To minimize the power consumption and the program voltage, the new composition material which shows the better phase-change properties than conventional $Ge_2Sb_2Te_5$ device has to be needed by accurate material engineering. In the present work, we investigate the basic thermal and the electrical properties due to phase-change compared with chalcogenide-based new composition $Ge_1Se_1Te_2$ material thin film and convetional $Ge_2Sb_2Te_5$ PRAM thin film. The fabricated new composition $Ge_1Se_1Te_2$ thin film exhibited a successful switching between an amorphous and a crystalline phase by applying a 950 ns -6.2 V set pulse and a 90 ns -8.2 V reset pulse. It is expected that the new composition $Ge_1Se_1Te_2$ material thin film device will be possible to applicable to overcome the Set/Reset problem for the nonvolatile memory device element of PRAM instead of conventional $Ge_2Sb_2Te_5$ device.