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      • KCI등재

        전기소설 <劉少娘傳> 연구

        정학 한국고소설학회 2003 古小說 硏究 Vol.16 No.-

        <유소랑전(劉小랑傳)>은 17세기 전기소설집 『신독재수택본 전기집』에 실려 있는 소설 작품이다. 본고에서는 첫째로, 작품 내외에서 대응되는 몇 가지 사실들을 근거로 이 작품이 중국에 원작의 출처나 원천을 두고 있음을 밝혔다. 둘째로, 작품 분석을 통해 열녀전과 전기(傳奇) 소설의 성격이 혼합 또는 합성되어 있는 작품 내용 및 형식 상의 이중적 성격과 함께, 순절을 미화하는 사대부적 이념을 벗어나지 못하면서도 그 비극적 희생을 비판적으로 형상하고 있는 작가의 이율배반적인 의식 및 전기소설로서 작품의 가치를 논진하였다. 셋째로, 조선에서 이 작품이 수용되던 배경으로 17세기 중엽 이래 가부장제와 함께 상례(喪禮) 의식과 열절(烈節)의 관념이 강화되던 사대부 사회와 사상의 동향을 살피고, 당근대 중국의 전기(傳記)적 사실이 (傳奇)로 용해ㆍ전성된 작품 수용의 소설사적 의미를 열녀전의 전통 및 소설 발달사 측면에서 살폈다. Yusorangcheon(劉少娘傳) is a short story that is included in The Collection of Romantic Fictions revised by Shindokjae(愼獨齋手澤本傳奇集) which is generally considered to be an anthology of 17th century works. My argument in this paper, the first research work on Yusorangcheon ever, is three-fold. First, I argue that the source or the original work of this short story came probably from China. Set in southern China, the story features a historical character from this region during the Ming era. This character was apparently famous in southern China yet unknown to Chosun. The theme of a fiance´e's sacrificial suicide as an expression of her loyalty to her dead fiance´ was quite popular in the literary works of the late Ming era in China especially in Cheon-gi(傳奇) drama but not in Chosun. In China there is also a historical record of an incident that might have served as a source for Yusorangcheon. Secondly, this paper examines the dual character of the work's genre and the author's ambivalent attitude towards the fiance´e's sacrificial dying. Yusorangcheon combines two genres, biography of virtuous women(烈女傳) and Cheon-gi, in its subject matter and form. The author, never free from the biases of Sadaebu(士大夫), glorifies the fiance´e's tragic sacrifice but at the same time blames the suicide. Although this work cannot match Cheon-go in its aesthetic quality and the extent of the progressive nature its theme, its realistic and critical description of contemporary society and its contradictions in morals and ideologies, nevertheless, follow the tradition of Cheon-gi. Thirdly, this paper surveys the historical context in which this work was accepted in the 17th century Chosun and tries to locate the significance of the distribution of this work. When considered in light of the socio-historical trend in and after 17th century Chosun which emphasized the ideas of funeral rites and wives' sacrifice for husbands as well as the idea of patriarchy, this work raises a question about the climate of reading in which biographies of so-called virtuous women prevailed and about the contemporary social atmosphere in which male-centered viewpoints glorified wives' sacrificial death. This work also shows some aspects of the 17th century Korean Cheon-gi history in which Cheon-gi dissolves itself into various spectrum combining other narrative such as biography, and developed under the rapid influence of Chinese literature.

      • KCI등재

        광역단지 유기농업 경영체 분석과 발전방향 -유기농클러스터를 중심으로-

        정학,김창길,장정경,Jeong, Hak-Kyun,Kim, Chang-Gil,Jang, Jeong-Kyung 한국유기농업학회 2010 韓國有機農業學會誌 Vol.18 No.3

        The objective of this paper is to analyze management performance of organic farming management organizations in the large-scale environment-friendly agricultural districts, focusing on cases of organic farming organizations in Chungnam Asan city and Gyeongnam Sancheong-gun which are leading regions in Korean organic agriculture. The management performance in Asan Organic Farming Organization showed that ratio of operating gain to revenue in 2008~2009 increased by 1.2% point compared to in 2006~2007. The management performance in Sancheong Organic Farming Organization showed revenue gain by KRW 2 million in 2009 whereas it suffered a loss by KRW 24 million in 2008. The management performances implied that the amount of financial performance was not yet large and would be a symbol for soundly developing organic farming organization. This paper suggested that network system, recycling agriculture, and the enlargement of processing industry would be very useful to maximize synergy effect in organic farming organizations in a large-scale environment-friendly agricultural districts.

      • KCI등재

        이중게이트 MOSFET의 대칭 및 비대칭 산화막 구조에 대한 문턱전압 분석

        정학,Jung, Hakkee 한국정보통신학회 2014 한국정보통신학회논문지 Vol.18 No.12

        본 연구에서는 대칭 및 비대칭 산화막 구조를 가진 이중게이트(double gate; DG) MOSFET의 문턱전압 변화에 대하여 분석하였다. 상하단 동일한 산화막 두께을 갖는 대칭 DGMOSFET와 달리 비대칭 DGMOSFET는 상하단 게이트 산화막 두께를 다르게 제작할 수 있다. 그러므로 비대칭 DGMOSFET에서 상단과 하단게이트 산화막 두께의 크기 변화에 따라 대칭 DGMOSFET와 문턱전압을 비교하여 상하단 게이트 산화막 두께의 최적값에 대하여 고찰하고자 한다. 문턱전압을 구하기 위하여 포아송방정식에서 해석학적 전위분포모델을 유도하였으며 도핑분포함수는 가우스분포함수를 사용하였다. 문턱전압 모델을 이용하여 하단게이트 전압, 채널길이 및 채널두께 등에 따라 상하단게이트 산화막 두께가 문턱전압에 미치는 영향을 관찰하였다. 결과적으로 문턱전압은 상하단 게이트 산화막 두께에 따라 크게 변화하였으며 변화하는 경향은 하단게이트 전압, 채널길이 그리고 채널두께에 따라 매우 상이하게 나타나고 있다는 것을 알 수 있었다. This paper has analyzed the change of threshold voltage for oxide structure of symmetric and asymmetric double gate(DG) MOSFET. The asymmetric DGMOSFET can be fabricated with different top and bottom gate oxide thickness, while the symmetric DGMOSFET has the same top and bottom gate oxide thickness. Therefore optimum threshold voltage is considered for top and bottom gate oxide thickness of asymmetric DGMOSFET, compared with the threshold voltage of symmetric DGMOSFET. To obtain the threshold voltage, the analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. We investigate for bottom gate voltage, channel length and thickness, and doping concentration how top and bottom gate oxide thickness influences on threshold voltage using this threshold voltage model. As a result, threshold voltage is greatly changed for oxide thickness, and we know the changing trend greatly differs with bottom gate voltage, channel length and thickness, and doping concentration.

      • 유기가공식품의 소비실태분석 연구

        정학균(Jeong, Hak-Kyun),장정경(Jang, Jeong-Kyung) 한국농촌경제연구원 2011 한국농촌경제연구원 정책연구보고서 Vol.- No.-

        The purpose of this study is to systematically analyze the consumer purchasing behaviors and future consumption towards homemade organically processed food(HOPF), and to derive directions for consumption promotion of HOPF. To this end, a survey was conducted for quantitative analyses regarding consumer purchasing behaviors and future consumption. This study used Ordinal Logistic Regression Model to derive more significant results in analyzing factors of future consumption. The analytical results were used to derive policy directions aimed at boosting the HOPF consumption. The consumer survey was conducted for 503 housewives living in Seoul and Gyeonggi Provinces using online. Among the respondents(400 housewives who have purchased HOPF) those in their 30s amounted to 40(10.5 percent), followed by those in their 40s with 182(45.5 percent), and those in their 50s or above with 178(44.5 percent). From the income perspective, 52.0 percent of the respondents were 3million won to 4million won. Among the respondents(103 housewives who have not purchased HOPF) those in their 30s to 40s amounted to 70.9 percent. From the income perspective, 58.3 percent of the respondents were 3million won to 4million won. The consumer survey conducted regarding certification mark and additives sign has found that the majority of domestic consumers confirm those. In detail 72.8 percent of those responded said that “I confirm certification mark while buying HOPF.” And 67.8 percent of those responded said that “I confirm additives sign while buying HOPF.” In relation to the future consumption toward HOPF, the Ordinal Logistic Regression Model was applied for analysis. The findings was that the younger consumers with high income are more likely to purchase HOPF. And those consumers who recognize the price and quality contentment to be high are more likely to purchase HOPF. And the contentment of certification instrument and improvement of health have a significant plus relationship with future consumption. The consumer survey conducted regarding consumption promotion has found that price reduction, reliability improvement, and store expansion are needed to promote consumption. Consumers who have purchased HOPF were found to pay 51 percent more for it. This level show that the current level of price premium for HOPF is 51 percent higher than their desired level. The consumer survey conducted regarding improvement of health has found that 48.8 percent of those responded said that "HOPF is helpful to family health. In order to reduce price premium for the HOPF effective policy programs should be developed. The target market strategy to sell HOPF to the younger consumers with high income is needed to boost consumption. To expand consumption, it is necessary to strengthen promotional efforts. The strict certification management system should be established to enhance consumer reliability in the food.

      • KCI등재

        비대칭 DGMOSFET의 도핑분포함수에 따른 DIBL

        정학,Jung, Hakkee 한국정보통신학회 2015 한국정보통신학회논문지 Vol.19 No.11

        본 연구에서는 비대칭 이중게이트 MOSFET의 채널 내 도핑농도분포에 대한 드레인유도장벽감소(Drain Induced Barrier Lowering; DIBL)에 대하여 분석하고자한다. DIBL은 드레인 전압에 의하여 소스 측 전위장벽이 낮아지는 효과로서 중요한 단채널 효과이다. 이를 분석하기 위하여 포아송방정식을 이용하여 해석학적 전위분포를 구하였으며 전위분포에 영향을 미치는 채널도핑농도의 분포함수변화에 대하여 DIBL을 관찰하였다. 채널길이, 채널두께, 상하단 게이트 산화막 두께, 하단 게이트 전압 등을 파라미터로 하여 DIBL을 관찰하였다. 결과적으로 DIBL은 채널도핑 농도분포함수의 변수인 이온주입범위 및 분포편차에 변화를 나타냈다. 특히 두 변수에 대한 DIBL의 변화는 최대채널도핑농도가 $10^{18}/cm^3$ 정도로 고도핑 되었을 경우 더욱 현저히 나타나고 있었다. 채널길이가 감소할수록 그리고 채널두께가 증가할수록 DIBL은 증가하였으며 하단 게이트 전압과 상하단게이트 산화막 두께가 증가할수록 DIBL은 증가하였다. This paper analyzes the phenomenon of drain induced barrier lowering(DIBL) for doping profiles in channel of asymmetric double gate(DG) MOSFET. The DIBL, the important short channel effect, is described as lowering of source barrier height by drain voltage. The analytical potential distribution is derived from Poisson's equation to analyze the DIBL, and the DIBL is observed according to the change of doping profile to influence on potential distribution. As a results, the DIBL is significantly influenced by projected range and standard projected deviation, the variables of channel doping profiles. The change of DIBL shows greatly in the range of high doping concentration such as $10^{18}/cm^3$. The DIBL increases with decrease of channel length and increase of channel thickness, and with increase of bottom gate voltage and top/bottom gate oxide film thickness.

      • KCI등재

        무접합 이중 게이트 MOSFET에서 문턱전압 추출

        정학,Jung, Hak Kee 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.3

        In this study, we compared the threshold-voltage extraction methods of accumulation-type JLDG (junctionless double-gate) MOSFETs (metal-oxide semiconductor field-effect transistors). Threshold voltage is the most basic element of transistor design; therefore, accurate threshold-voltage extraction is the most important factor in integrated-circuit design. For this purpose, analytical potential distributions were obtained and diffusion-drift current equations for these potential distributions were used. There are the ${\phi}_{min}$ method, based on the physical concept; the linear extrapolation method; and the second and third derivative method from the $I_d-V_g$ relation. We observed that the threshold-voltages extracted using the maximum value of TD (third derivatives) and the ${\phi}_{min}$ method were the most reasonable in JLDG MOSFETs. In the case of 20 nm channel length or more, similar results were obtained for other methods, except for the linear extrapolation method. However, when the channel length is below 20 nm, only the ${\phi}_{min}$ method and the TD method reflected the short-channel effect.

      • KCI등재

        대칭형 무접합 이중게이트 MOSFET에서 스케일 길이를 이용한 문턱전압 이하 스윙 모델

        정학 한국전기전자재료학회 2021 전기전자재료학회논문지 Vol.34 No.2

        We present a subthreshold swing model for a symmetric junctionless double gate MOSFET. The scale length λ₁ required to obtain the potential distribution using the Poisson's equation is a criterion for analyzing the short channeleffect by an analytical model. In general, if the channel length Lg satisfies Lg>1.5λ₁ , it is known that the analytical model can be sufficiently used to analyze short channel effects. The scale length varies depending on the channel and oxide thickness as well as the dielectric constant of the channel and the oxide film. In this paper, we obtain the scale length for a constant permittivity (silicon and silicon dioxide), and derive the relationship between the scale length and the channel length satisfying the error range within 5%, compared with a numerical method. As a result, when the thickness of the oxide film is reduced to 1 nm, even in the case of Lg>λ₁, the analytical subthreshold swing model proposed in this paper is observed to satisfy the error range of 5%. However, if the oxide thickness is increased to 3 nm and the channel thickness decreased to 6 nm, the analytical model can be used only for the channel length of Lg>1.8λ₁.

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