http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Electronic and Optical Properties of ZnOS/ZnO Quantum-well Structures with Polarization Effects
전희창,선일쿠마르,이승주,T. W. Kang,S. H. Park 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.69 No.3
The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.
전희창,이승주,선일쿠마르,강태원,이남현,김태환 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.8
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substratesby using plasma-assisted molecular-beam epitaxy. The GaN epilayer with an AlN buffer layerwas much smaller than the GaN epilayer without an AlN buffer layer. The crystal quality ofthe GaN active layer was improved by utilizing an AlN layer, which acted as a nucleation layer. The reduced defect density promoted GaN coalition. The double-crystal rocking curves and thephotoluminescence spectra showed that the GaN epilayer grown on a 4-nm AlN buffer layer hadthe best quality among the several kinds of samples. The photoluminescence intensity of the GaNepilayer which is related to the density of the crystal defects was lower when an AlN buffer layerwas used the thin AlN nucleation layer protected against stain propagation. These results indicatethat GaN epilayers grown on AIN buffer layers hold promise for applications in short-wavelengthoptoelectronic devices.
Optical and Magnetic Properties of (Ga1-xMnx)N-Based Heterostructures
전희창,강태원,김태환 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
The optical and the magnetic properties of (Ga1.xMnx)N/GaN digital ferromagnetic heterostructures (DFHs) grown by using molecular beam epitaxy were investigated. The photoluminescence (PL) spectra showed band-edge exciton and exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitutes, which corresponded to neutral donor-bound exciton for the GaMnN and GaN. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga1.xMnx)N/GaN DFHs decreased with increasing Mn mole fraction. The ferromagnetic properties of GaMnN/GaN DFHs were significantly affected by the hole concentration in the DFHs..onmo
전희창,윤의식,유희진,김현석,이병일,박승하 대한성형외과학회 2014 Archives of Plastic Surgery Vol.41 No.6
Background: Perineal reconstruction following pelvic exenteration is a challenging area inplastic surgery. Its advantages include preventing complications by obliterating the pelvicdead space and minimizing the scar by using the previous abdominal incision and a verticalrectus abdominis musculocutaneous (VRAM) flap. However, only a few studies have comparedthe complications and the outcomes following pelvic exenteration between cases with andwithout a VRAM flap. In this study, we aimed to compare the complications and the outcomesfollowing pelvic exenteration with or without VRAM flap coverage. Methods: We retrospectively reviewed the cases of nine patients for whom transpelvic VRAMflaps were created following pelvic exenteration due to pelvic malignancy. The complicationsand outcomes in these patients were compared with those of another nine patients who didnot undergo such reconstruction. Results: Flap reconstruction was successful in eight cases, with minor complications such aswound infection and dehiscence. In all cases in the reconstructed group (n=9), structuralintegrity was maintained and major complications including bowel obstruction and infectionwere prevented by obliterating the pelvic dead space. In contrast, in the control group (n=9),peritonitis and bowel obstruction occurred in 1 case (11%). Conclusions: Despite the possibility of flap failure and minor complications, a VRAM flap canresult in adequate perineal reconstruction to prevent major complications of pelvicexenteration
Optical Properties of (Ga1-xMnx)N Thin Films with a Low Mn Concentration Grown on GaN Buffer Layers
전희창,강태원,김태환,Yong Hun Cho,Chang-Myung Lee 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
The optical properties of (Ga1..xMnx)N thin lms with a low Mn concentration grown on GaNbuffers by using molecular beam epitaxy were investigated. The magnetization curve as a function of magnetic feld at 5 K indicated that ferromagnetism existed in the (Ga1..xMnx)N thin lms, and the magnetization curve as a function of temperature showed that the Curie temperature (Tc) of the (Ga1..xMnx)N thin lm was above room temperature. Photoluminescence spectra measured at several temperatures showed band-edge exciton transitions in (Ga1..xMnx)N thin flms with diluted magnetic semiconductor properties and a Tc value above room temperature, indicative of the Mn atoms acting as substitution. These results indicate that (Ga1..xMnx)N thin lms hold promise for potential applications in spintronic devices in the blue region of the spectrum.
Deep Level Related to a Two-Dimensional Electron Gas Region in AlxGa1-xN/GaN Heterointerfaces
전희창,C.J.Park,H.Y.Cho,강태원,김태환,J. E. OH,나종호 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
Deep-level transient spectroscopy (DLTS) measurements were performed on AlxGa1..xN/GaN heterostructures grown by using molecular beam epitaxy. The DLTS results show two deep levels, J1 and J2. The J1 peak is attributed to an electron trap related to a dislocation in a two-dimensional electron gas region at the AlxGa1..xN/GaN heterointerface and has an activation energy of Ec .. 0.20 eV and a capture cross section of 4.4 10..20 cm..2. The J2 peak is related to the point defect. These results provide important information on the electronic properties for improving the fabrication eciencies of AlxGa1..xN/GaN heterostructure-based high-electron-mobility transistors.
이동진,전희창,율다세프,강태원,류성룡,손문아,박지원,우용득 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.2
Self-assembled, one dimensional (1-D) Zn1−xCdxS nanostructures with a Cd composition ofx = 0.11 have been successfully fabricated on indium-tin-oxide/glass substrates by using a coevaporationmethod in the absence of any catalyst. The structures and the morphologies of thesenanostructures were studied using X-ray diffraction and high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy confirmed that the Cd ions occupied the Zn sites in theZnCdS nanowire. The fabricated ZnCdS nanostructures exhibited various shapes, such as hexagonalnanorods (H-NRs), cylindrical nanorods (C-NRs), nanoneedles (NNs), nanowires (NWs) andnanodumbbells (NDs), for different substrate temperatures. Increasing the substrate temperatureresulted in the formation of nanostructures with smaller diameters. The shape-controllable growthof ZnCdS 1-D nanostructures might result in the development of a high-efficiency nano-solar cell.