국제학술회의 참관기 - 미국 진공학회 학술대회

전형탁,Jeon, Hyeong-Tak 한국과학기술단체총연합회 1997 과학과 기술 Vol.30 No.12

지난 10월 20일~24일 미국의 서부 산호세에서 열린 미국진공학회 학술대회에 4명의 대학원생과 함께 참석하여 2편의 논문을 발표한 한양대 금속공학과 전형탁교수의 학술대회 참관기를 싣는다.

Al - Cu 소량 첨가에 의한 CV 주철에 관한 기초연구

전형탁,허보영,김수영 대한금속재료학회 1983 대한금속재료학회 학술대회 개요집 Vol.1983 No.0

에멀젼법에 의한 $TiO_2$ 미립자의 합성 및 광흡수 특성

전형탁,최연규,김복희 한국세라믹학회 1999 한국세라믹학회지 Vol.36 No.11

Si기판 세정조건에 따른 산화막의 특성연구

전형탁,강응렬,조윤성,Jeon, Hyeong-Tak,Gang, Eung-Ryeol,Jo, Yun-Seong 한국재료학회 1994 한국재료학회지 Vol.4 No.8

Gate oxide의 특성은 세정공정에서 사용된 last세정용액에 큰 영향을 받는다. Standard RCA, HF-last, SCI-last, and HF-only 공정들은 gate oxidation하기 전 본 실험에서 행해진 세정공정들이다. 세정공정을 마친 Si기판들은 oxidation furnace에서 $900^{\circ}C$로 thermal oxidation공정을 거치게 된다. 100$\AA$의 gate oxide를 성장시킨 후 lifetime detector, VPD, AAS, SIMS, TEM, 그리고 AFM고 같은 분석장비를 이용하여 oxide의 특성을 평가했다. HF-last와 HF-only 공정에 의해 금속 불순물들이 매우 효과적으로 제거됐음을 알 수 있었다. Oxide의 표면 및 계면 형상은AFM과 TEM 측정을 통하여 관찰하였다. 표면거칠기는 SCI 세정용액을 사용한 splits 실험에서 불균일함이 관찰되었고 HF-only세정공정을 거친 시편 및 계면이 가장 smooth했다. The characteristics of gate oxide significantly depend on the last chemical solution used in cleaning process. The standard RCA, HF-last, SC1-last, and HF-only processes are the pre-gate oxide cleaning processes utilized in this experiment. Cleaning process was followed by thermal oxidation in oxidation furnace at $900^{\circ}C$. A 100$\AA$ gate oxide was grown and characterized with using lifetime detector, VPD AAS, SIMS, TEM, and AFM. The results of HF-last and HF-only were shown to be very effective to remove the metallic impurities. And these two splits also showed long minority carrier lifetimes. The surface and interface morphologies of the oxide were examined with AFM and TEM. The rough surface morphologies were observed with the cleaning splits containing the SC1 solution. The smooth surface and interface was observed with the HF-only cleaning process.

C49 $TiSi_2$상의 에피구조 및 상안정성

전형탁,Jeon, Hyeong-Tak,Nemanich, R.J. 한국재료학회 1994 한국재료학회지 Vol.4 No.2

초청장 Si(111)기탄상에 초고진공 챔버에서 Ti을 증착하여 $TiSi_{2}$를 에피층으로 성장시켰다. 재구성된 (reconstructed) Di(111)표면에 상온에서 50$\AA$ 두께의 Ti을 증착한 후 $100^{\circ}C$간격으로 $800^{\circ}C$까지 열처리 하였다. $TiSi_{2}$박막의 구조는 전자회절 패턴 분석을 통하여 준안정상인 C49상임을 확인하였다. SEM 사진은 세가지 형태의 island를 보이고 있다. 각 island 는 단결정이며 그 구조는 서로 다른 결정학적 방향을 갖는 에피구조이다. 이러한 TiSi$_{2}$ island[112]C49 TiSi$_{2}$/[110]Si, (021) C49 $TiSi_{2}$/(111)Si의 방향관계를 가지고 있다. Epitaxial TiSiz films have been grown by UHV deposition of Ti on atomically clean Si(ll1)- orientated substrates. The Ti film of 50$\AA$ was deposited on the reconstructed Si(ll1) surface at room temperature. The sample was annealed up to $800^{\circ}C$ in $100^{\circ}C$ increments. The structure of the TiSiL films have been identified as the C49 metastable phase by electron diffraction patterns. Scanning electron microscopy( SEM) shows three different types of Tiksilicide island morphologies. The individual island structures are single crystal and are considered to be epitaxy with different crystallographic orientations. The orientational relationships of the $TiSi_{2}$ islands is given by [ 172 1 C49 $TiSi_{2}$//[110] Si and (021) C49 $TiSi_{2}$// (111)Si.

Characteristics of HfN Films Deposited by Using Remote Plasma-enhanced Atomic Layer Deposition

전형탁,Wooho Jeong,Youngbin Ko,Seokhwan Bang,Seungjun Lee 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.3

HfN films were deposited by using remote plasma-enhanced atomic layer deposition (RPALD)with tetrakis-dimethylamino-hafnium {TDMAH, Hf[N(CH3)2]4} as a Hf precursor and a N2 plasma as a reactant. The growth rate of the HfN films was about 0.2 nm/cycle in the process window of 150 - 250℃ The optimized process temperature, plasma power, and pressure were 250 ℃,300 W, and 1 Torr, respectively. The as-deposited film was slightly nitrogen-rich, and the nitrogen content decreased slightly after in-situ vacuum annealing at 700 ℃ for 10 min. HfN films deposited on contact holes (0.12-µm wide and 1.8-µm deep) showed excellent conformal coverage. Barrier characteristics were observed in the Cu/HfN/Si samples after annealing at various temperatures,and the formation of a copper silicide phase was observed after annealing at 650 ℃.

$TiO_2$분말 제조 및 Verneuil 법에 의한 Rutile 단결정 성장

전형탁,김복희,손선기,오근호 한국결정성장학회 1992 韓國結晶成長學會誌 Vol.2 No.1

$TiCl_4$와(NH_4)_2SO_4$를 액상 반응시켜 암모늄 티타늄 설페이트를 형성시킨 뒤 하소하여 미립의 $TiO_2$분말을 만들었다. Anatase 분말로 Verneuil장치에서 Rutile단결정을 성장시킨 뒤 물성을 조사하였다. 최적의 성장조건은 $H_2:O_2=3:1$ 성장온도는 $1900^{\circ}C$ 분말공급속도는 10g/hr였다. Fine $TiO_2$ powders were synthesized from ammonium titanium sulphate which produced from $TiCI_4$, and$(NH_4)_2$ SO. solution. Rutile single crystal were grown by the verneuil method with anatase powders and investigated the property of rutile crystal. The optimun growing conditions were as follows $\cdot$The ratio of hydrogen gas and oxygen gas; 3: 1 $\cdot$Growing temperature: $1900^{\circ}C$ $\cdot$The feeding rate of powders: 10g/hr

Characteristics of Zinc-Oxide-Sulfide-Mixed Films Deposited by Using Atomic Layer Deposition

전형탁,Sunyeol Jeon,방석환,이승준,권세명,정우호,장호정,박형호 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.6

Mixed thin films of ZnO and ZnS were deposited by using atomic layer deposition (ALD) to achieve film properties for active channel materials of transparent electronic devices and the characteristics of ZnO, ZnS and their mixed films with various composition ratios were examined. The chemical bond states of mixed films consisting of ZnO and ZnS phases were analyzed and no sulfate or sulfite phases were observed. The structures of the ZnO and the ZnS films exhibited wurtzite hexagonal crystalline structures. However, the mixed films did not show any specic preferred orientation; the amorphous character of the mixed films was due to the large lattice mismatch between the ZnO and the ZnS films. The ZnO thin film showed a low resistivity with a higher carrier concentration (up to ∽1019 cm-3) than the ZnS thin film which showed ∽1012 cm-3 carrier concentration. The mixed films exhibited carrier concentrations of 1015 - 1018 cm-3 and a resistivity range of 102 - 103 Ωcm, depending on the composition. Furthermore, no significant changes in the electrical properties of the mixed films were observed with respect to the post-heat treatments.

좋은 물이 우리 몸을 지켜준다

전형탁 한국물학회 2013 한국물학회 학술대회 Vol.2013 No.03

Analysis of Ti-Silicide Formation with a Thin Ta Interlayer on Si (100)

전형탁,HeykyoungWon,YangdoKim,JaeseobLee,R.J.Nemanich 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.5

The phase formation of Ti-silicide with a Ta interlayer deposited on Si (100) substrates has been studied. The Ti layer of 100 A was deposited on top of a 5 A Ta interlayer on a Si (100) substrate. After metal deposition, the Si substrate was in-situ annealed at temperatures between 580 and 830 C. Ti-silicides were formed and analyzed with using X-ray diractometer (XRD), scanning electron microscope (SEM), Auger electron spectroscopy (AES), and transmission electron microscope (TEM) to verify the phase transition and the surface and interface morphologies. The change in the temperature of the phase transition from C49 to C54 TiSi2 was observed. The C49 to C54 TiSi2 phase transition temperature was below 630 C for the samples with the Ta interlayer and was about 830 C for the samples without the Ta interlayer. The temperature of the phase transition from C49 to C54 TiSi2 with the Ta interlayer was observed to be lowered by about 200 C. The AES data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si (100) substrate. A retarded agglomeration of Tisilicide was observed with the Ta interlayer. The present results for Ti-silicide with a Ta interlayer conrmed that the areal coverage and island morphologies of TiSi2 on Si (100) were uniform and smooth.