Fe - B - Si 비정질합금 Ribbon 의 제조조건에 대하여

장호정,송진태 대한금속재료학회 1985 대한금속재료학회 학술대회 개요집 Vol.1985 No.1

Sol-Gel법에 의한 SrBi_2Ta_2O_9 강유전체 박막의 특성

장호정,임장규,유수호 단국대학교 신소재기술연구소 2000 신소재 Vol.9 No.-

Pt/Ti/SiO_2/Si 기판구조위에 sol-gel법에 의해 as-coated SrBi_2Ta_2O9(SBT) 박막을 형성하였고, 650℃ 후속 열처리 온도에서 결정화한 후 결정학적 특성과 전기적 특성을 연구하였다. 650℃에서 후속 열처리된 SBT 박막시료의 경우 전형적인 perovskite결정구조를 보여주었다. SEM 표면과 단면형상을 관찰하여, 650℃ 후속 열처리한 박막의 두께는 약 7000Å를 나타냈으며 Pt전극과 SBT박막 사이에는 비교적 평활한 계면형상을 보여주었다. 1kHz주파수 인가시, 650℃에서 후속 열처리된 SBT 박막시료의 유전상수는 250의 값을 나타내었으며 잔류분극(2Pr=pr^+ + Pr^-) 값은 약 3.5uC/cm^2를 나타내었다. The as-coated SrBi_2Ta_2O_9(SBT) thin films were prepared on Pt/Ti/SiO_2/Si substrates by the solgel method. The post-annealing was carried out at 650℃ for the crystallization. The crystal structures and electrical characterizations were investigated. The SBT thin films post-annealed at 650℃ appeared the typical perovskite crystal structures. The SEM sectional and surfacial micrographies were observed. The thickness of SBT thin films post-annealed at 650℃ was about 7000Å. Sectional surface between Pt electrode and SBT film showed relative smoothness. The SBT thin films post-annealed at 650℃ indicated about 250 for the dielectric constant and 305 uC/cm^2 for the remanent polarization (2Pr=Pr^+ + Pr^-) at the frequency of 1kHz. The leakage currents were about 0.5~1.2uA/cm^2.

스크린 인쇄법과 졸겔법에 의해 제작된 (Pb,La)TiO_3 강유전체막의 특성 연구

장호정,김민영,서광종,장지근 단국대학교 신소재기술연구소 1998 신소재 Vol.8 No.-

Pt/SiO_2/Si 기판구조위에 스크린인쇄법과 졸-겔법에 의해 as-coated (Pb, La)TiO_3(PLT), 후막과 형성하고 650℃ 후속열처리 온도에서 결정화한후 결정특성과 전기적 특성을 조사하였다. 650℃ 온도에서 후속열처리된 PLT시료의 경우 전형적인 perovskite 결정구조를 보여주었다. 후속 열처리된 PLT 후막과 박막의 두께는 약 3.5㎛와 0.8㎛로 각각 나타났으며 Pt 전극과 PLT막 사이에는 비교적 평활한 계면형상을 보여주었다. PLT 후막과 박막시료의 1 kHz 주파수에서 유전상수는 660과 190의 값을 나타내었으며 잔류분극(2Pr) 값은 약 1μC/㎠과 7μC/㎠을 각각 나타내었다. 후막 PLT 시료에 의해 박막시료에서 잔류분극값의 증가는 박막시료가 보다 양호한 결정성을 가지고 있기 때문으로 사료된다. 누설전류의 크기는 약 0.3∼0.8 μA/㎠의 값을 나타내어 비교적 양호한 누설전류 특성을 얻었다. The as-coated (Pb,La)TiO_3(PLT) thick and thin films were prepared on Pt/SiO_2/Si substrates by the screen printing and the sol-gel methods. The post-annealing was carried out at 650℃ for the crystallization. The crystal structures and electrical properties were investigated. The PLT films annealed at 650℃ showed the typical perovskite crystal structures. The thickness of PLT thick and thin films were about 3.5 ㎛ and 0.8 ㎛ respectively, showing relatively smooth cross-sectional surface between Pt electrode and PLT film. The PLT thick and thin films annealed at 650℃ indicated about 660 and 190 for the dielectric constant and 1 μC/㎠ for the remanent polarization(2Pr), respectively. The higher Pr value in the thin film sample compared to the thick film may attributed to the good crystal structure of the thin film. The leakage currents were about 0.3-0.8μA/㎠.

스크린 인쇄법에 의한 (Pb,La)TiO_3 강유전체 후막의 전기적 특성

장호정,김민영 단국대학교 1999 論文集 Vol.34 No.-

(Pb,La)TiO_3(PLT) thick films were prepared on the Pt/SiO_2/Si substrates by the screen printing method. Crystalline and electrical properties were investigated according to the post-annealing temperature. The PLT thick films annealed at the temperatures above 650℃ for 1 hour showed the typical perovskite crystal phases. The FWHM(full width at half maximum) value was decreased with increasing the post-annealing temperature from 600℃ to 700℃ suggesting the improved crystallinity. The dielectric constant and tangent loss of the PLT thick film annealed at 650℃ were about 750 and 0.009. repectively. The remanent polarization(2Pr, Pr+-Pr-) and the pyroelectric coefficient of the PLT film annealed at 700℃ were about 1μC/㎠ and 1.5 nC/㎠·℃ at 30℃. The leakage current was 0.3㎂/㎠ at 5V bias.

스크린 인쇄법으로 제작된 YBa2Cu3O7-x / Ag 고온초전도 후막의 초전도특성

장호정,Yasuhiro Watanabe,Yukata Doshida,Kenji Shimizu,Ryozo Akihama,송진태 대한금속재료학회 1990 대한금속재료학회 학술대회 개요집 Vol.1990 No.0

낙법(烙法)에 관한 중의(中醫) 논문 고찰

장호정,이현주,서형식,Jang, Ho-Jeong,Lee, Hyeon-Joo,Seo, Hyung-Sik 대한한방안이비인후피부과학회 2018 한방안이비인후피부과학회지 Vol.31 No.3

Objectives : The purpose of this study is to review the chinese published papers on cauterization of traditional chinese medicine. Methods : We searched chinese published papers from 1958 until May 2017 via CNKI(China National Knowledge Infrastructure) with the keyword "cauterization". We analyzed the studies covered cauterization medical treatment, and classified them by 5 categories including periods, type of study, treatment site, experiment target site, and cauterizing method. Results : We reviewed 112 chinese papers which include 10 Original articles, 43 Review articles, and 59 Case reports. Examining yearly distributions, we can see that research on cauterization is becoming more active than in the past. In classification of 93 clinical studies by treatment site, the number of research on Tonsillitis accounts for almost half(43 studies), followed by Sore throat(14 studies). Among 10 experimental studies, Eye is the most frequently targeted organ which was used to study high intra-ocular pressure(5 studies), and retinal ganglion cell(2 studies). Lastly, there are various methods of cauterization used in papers: Branding iron(54 studies), and Red-hot needle(24 studies) are two major heating methods. Conclusions : This analysis shows that studies on the application of cauterization have been actively conducted in China these days. Furthermore, up-to-date cauterizing methods have been developed such as electric type and microwave type beyond traditional ways. We expect this article will encourage further research on cauterization in order to apply it to a variety of diseases. Then, it could become one of new effective medical treatments in Korean medicine.

프린팅 히터용 코발트실리사이드 박막의 형성과 특성연구

장호정,노영규 한국마이크로전자및패키징학회 2002 마이크로전자 및 패키징학회지 Vol.9 No.2

졸-겔 방법으로 $SiO_2/Si$ 기판 위에 제작된 (Bi,La)$Ti_3O_12$ 강유전체 박막의 특성 연구

장호정,황선환 한국마이크로전자및패키징학회 2003 마이크로전자 및 패키징학회지 Vol.10 No.2

졸-겔(Sol-Gel)법으로 $SiO_2/Si$ 기판 위에 $Bi_{3.3}La_{0.7}O_{12}$(BLT) 강유전체 박막을 스핀코팅하여 Metal-Ferroelectric-Insulator-Silicon 구조의 캐패시터 소자를 제작하였다. 열처리하지 않은 BLT 박막시료를 $650^{\circ}C$와 $700^{\circ}C$의 온도에서 열처리함으로서 임의 배향을 가지는 퍼롭스카이트 결정구조를 나타내었다. 열처리 온도를 $650^{\circ}C$에서 $700^{\circ}C$로 증가시킴에 따라서 (117) 주피크의 full width at half maximum(FWHM)값이 약 $0.65^{\circ}$에서 $0.53^{\circ}$로 감소하여 결정성이 개선되었으며 결정립 크기와 $R_rms$ 값이 증가하면서 박막표면이 거칠어지는 경향을 보여주었다. $700^{\circ}C$에서 열처리한 BLT 박막시료에 대해 인가 전압에 따른 정전용량(C-V)값을 측정한 결과 5V의 인가전압에서 메모리 원도우 값이 약 0.7V를 보여주었으며, 3V의 인가전압에서 누설전류 값이 약 $3.1{\times}10^{-8}A/cm^2$을 나타내었다. The $Bi_{3.3}La_{0.7}O_{12}$(BLT) capacitors with Metal-Ferroelectric-Insulator-Silicon structure were prepared on $SiO_2/Si$ substrates by using sol-gel method. The BLT thin films annealed at $650^{\circ}C$ and $700^{\circ}C$ showed randomly oriented perovskite crystalline structures. The full with at half maximum (FWHM) of the (117) main peak was decreased from $0.65^{\circ}$ to $0.53^{\circ}$ with increasing the annealing temperature from $650^{\circ}C$ to $700^{\circ}C$, indicating the improvement in the crystalline quality of the film. In addition, the grain size and $R_rms$ , values were increased with increasing the annealing temperatures, showing the rough film surface at higher annealing temperatures. From the capacitance-voltage (C-V) measurements, the memory window voltage of the BLT film annealed at $700^{\circ}C$ was found to be about 0.7 V at an applied voltage of 5 V. The leakage current density of the BLT film annealed at $700^{\circ}C$ was about $3.1{\times}10^{-8}A/cm^2$.

비휘발성 메모리용 SrBi$_{2}$Ta$_{2}$ $O_{9}$강유전체 박막의 제조 및 특성연구

장호정,서광종,장기근 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.3

SrBi$_{2}$Ta$_{2}$O$_{9}$ (SBT) ferroelectric thin films for nonvolatile memory were prepared on Pt/Ti/SiO$_{2}$/Si and RuO$_{2}$/SiO$_{2}$/Si substrates by RF magnetron sputtering. The dependences of crystalline and electrical properties on the lower electrode type(Pt and RuO$_{2}$) and the annealing temperatures were investigated. SBT films regardless of their electrode types showed typeical Bi layered peroviskite crystal structures. The crystalline quality of as-deposited SBT films was improved by the rapid thermal annealing at 650.deg. C for 30 sec. The remanetn polarization of 2Pr (Pr+-Pr-) of the annealed SBT films deposited on Pt/Ti/SiO$_{2}$/Si substrates were about 11 .mu.C/cm$^{2}$ and 3 .mu.C/cm$^{2}$, respectively. The leakage currents at 3 V bias voltage were about 0.8 .mu.A/cm$^{2}$ for SBT/ Pt/Ti/SiO$_{2}$/Si and about 1 .mu.A/cm$^{2}$ for SBT/RuO$_{2}$/SiO$_{2}$/Si sample. SBT films annealed at 650 .deg. C showed no degradation in Pr values after 10$^{11}$ polarization switching cycles, indicating good fatigue properties. In addition, for SBT samples deposited on Pt/Ti/SiO$_{2}$/Si, Pr values increased to more than that of initial state, suggesting the increament of leakage current caused by repeated polarization.

스크린 인쇄법에 의한 (Pb,La)TiO₃ 강유전체 후막의 전기적 특성

장호정 단국대학교 1999 論文集 Vol.34 No.-