기관내 삽관이 곤란한 경우의 처치

이종무,김항중,양홍석 중앙대부설한국의과학연구소 1992 한국의과학 Vol.24 No.3

Synthesis of Very Straight Bismuth Oxide Nanowires by Using Thermal Evaporation of Bismuth Powders

이종무,박성훈,김호형,이돈행,홍순선 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4

One-dimensional (1D) nanostructures of bismuth oxide (Bi2O3) have been prepared by using various techniques, but there has been no report on the synthesis of Bi2O3 nanowires by using thermal evaporation yet. Very straight single-crystal Bi2O3 nanowires with sizes of 50 - 300 nm in diameter and 50 - 100 um in length, depending on the process temperature and the N2/Ar gas flow ratio were successfully synthesized on Au-coated c-plane sapphire (Al2O3) substrates by using thermal evaporation with bismuth powders. The dependences of the morphology of the Bi2O3 nanowires on the process temperature, the oxygen partitial pressure and the substrate material were investigated. The straightness of the Bi2O3 nanowire strongly depends on the oxygen partial pressure. The growth rate of Bi2O3 nanowires is much faster on (0001) Al2O3 than on (100) Si, despite the lattice mismatch (15.5 %) between the c of -Bi2O3 and the a of Al2O3 being much larger than that (3.6 %) between the c of fi-Bi2O3 and the a of Si (5.43 Å). The crystalline nature of the Bi2O3 nanowires was revealed by using high-resolution transmission electron microscopy (HRTEM) and selected-area electron diffraction (SAED). X-ray diffraction (XRD) results indicate that the Bi2O3 nanowires are pure tetragonal fi-Bi2O3 phase single crystals. Energy-dispersive X-ray spectroscopy (EDS) analysis confirms that the Bi2O3 nanowires grow via a vapor-liquid-solid (VLS) mechanism in thermal evaporation of Bi powders. The photoluminescence (PL) spectrum of the Bi2O3 nanowires shows a broad blue emission peak centered at around 450 nm.

Preparation of Transparent Conducting Ga-Doped ZnO and Al-Doped ZnO Bilayers by Using r.f. Magnetron Sputtering with ZnO Buffer Layers on Polymer Substrates

이종무,Hojin Kim,Sookjoo Kim,Wangwoo Lee 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3

Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films were sequentially deposited on polymer (polyethylene terephthalate: PET) substrates with ZnO buffer layers by using a radio-frequency (r.f.) magnetron sputtering technique, and the effects of the buffer layer thickness on the microstructure and the electrical and the optical properties of the GZO/AZO/ZnO multilayers films were investigated to develop transparent conductors for flexible display applications. The optimum buffer layer thickness with which the lowest resistivity of the GZO/AZO/ZnO films was obtained was determined to be 140nm. The carrier concentration, the carrier mobility and the electrical resistivity of the GZO film with a 150-nm-thick ZnO buffer layer were 6.8 $\times$ 10$^{20}$ cm$^{-3}$, 11.0 cm$^2$/Vs and 8.3 $\times$ 10$^{-4}$ $\Omega$cm, respectively. The transmittance of the GZO/AZO/ZnO films was found to be higher than 85 \% and to be nearly independent of the ZnO buffer layer thickness.

Dependence of the NH3 Gas Flow Rate on the Electrical Properties of p-Type ZnO Thin Films Prepared by Using Atomic Layer Epitaxy

이종무,Jongmin Lim,Su Young Park 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.3

p-type ZnO was successfully obtained by using atomic layer epitaxy (ALE) with Zn(C$_2$H$_5$)$_2$ [Diethylzinc, DEZn], H$_2$O, and NH$_3$ as a zinc precursor, an oxidant, and a doping source gas, respectively. An optimum NH$_3$ gas flow rate exists for obtaining p-type ZnO. The lowest electrical resistivity of the p-type ZnO films grown by ALE at the NH$_3$ gas flow rate of 7 sccm is 43.7 $\Omega\cdot {\rm cm}$ with a hole concentration of 1.57 $\times$ 10$^{17}$ cm$^{-3}$. Low-temperature photoluminescence analysis results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor. Also, a model for change from n-type ZnO to p-type ZnO by annealing is proposed.

Enhanced Photoluminescence of ZnSe Nanowires with Branches

이종무,박성훈,Jina Jun 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.2

ZnSe nanowires have been grown by thermal evaporation of ZnSe powder on Si(100) and Al2O3(0001) substrates coated with gold (Au) thin films. ZnSe nanowires grown on Si(100) were thicker (~2 μm in diameter) and have numerous fine branch nanowires (20 50 nm in diameter and 400 – 500 nm in length) while those grown on Al2O3 (0001) were thinner (0.1 – 0.2 μm in diameter) and do not have branch nanowires. The former (ZnSe nanowires with branches) shows far stronger deep level photoluminescence (PL) emission than the latter. This enhanced PL emission may be attributed to the abundant surface states at the surfaces of the extremely fine branch nanowires which have a high surface-to-volume ratio.

[공연 발제] 〈주머니 속의 연기〉

이종무 공연과이론을위한모임 2012 공연과 이론 Vol.- No.46

우리민족서로돕기운동의 농업협력사업 - 추진 과정과 과제

이종무 한국농촌경제연구원 2010 KERI 북한농업동향 Vol.12 No.1

구안괘사에 使用되는 灸法에 關한 文獻的 考察

李鍾武,李秉烈 대전대학교 韓醫學연구소 1999 한의학연구소 논문집 Vol.8 No.1

Influence of a ZnO Coating on the Photoluminescence Properties of SnO2 Nanobelts

이종무,박성훈,김호형,이종우,김현우 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2

ZnO-coated SnO2 (SnO2-core/ZnO-shell) one-dimensional structures were prepared using a two-step method of thermal evaporation of Sn powders followed by atomic layer deposition (ALD) of ZnO. The influence of the ZnO layer's thickness on the photoluminescence (PL) properties of the nanostructure was investigated by using a room-temperature PL spectroscopy analysis. The intensity of the PL peak at about 595 nm, characteristic of the SnO2 core, decreases significantly and shifts to the lower wavelength region to form a broad emission peak ranging from 535 to 595 nm as the ZnO layer's thickness increases. Besides this broad peak a new emission peak, centered around 370 nm in the ultraviolet region also characteristic of ZnO, appears and increases with increasing thickness of the ZnO layer. Our results show that the wavelength of the emitted light can be controlled by coating SnO2 nanobelts with ZnO and optimizing the thickness of the ZnO-shell layer. The experimental results also suggest that the ZnO-coated SnO2 nanostructures can be enhanced by thermal annealing. The growth mechanism of SnO2 one-dimensional nanostructures by thermal evaporation is also discussed. ZnO-coated SnO2 (SnO2-core/ZnO-shell) one-dimensional structures were prepared using a two-step method of thermal evaporation of Sn powders followed by atomic layer deposition (ALD) of ZnO. The influence of the ZnO layer's thickness on the photoluminescence (PL) properties of the nanostructure was investigated by using a room-temperature PL spectroscopy analysis. The intensity of the PL peak at about 595 nm, characteristic of the SnO2 core, decreases significantly and shifts to the lower wavelength region to form a broad emission peak ranging from 535 to 595 nm as the ZnO layer's thickness increases. Besides this broad peak a new emission peak, centered around 370 nm in the ultraviolet region also characteristic of ZnO, appears and increases with increasing thickness of the ZnO layer. Our results show that the wavelength of the emitted light can be controlled by coating SnO2 nanobelts with ZnO and optimizing the thickness of the ZnO-shell layer. The experimental results also suggest that the ZnO-coated SnO2 nanostructures can be enhanced by thermal annealing. The growth mechanism of SnO2 one-dimensional nanostructures by thermal evaporation is also discussed.

Effects of the Al Interlayer Thickness on the Resistivity and the Transmittance of GZO/Al/ZnO Multilayer Thin Films Deposited on Polymer Substrates

이종무,홍찬석,김호형,박성훈 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2

The effects of the thickness of an Al interlayer on the microstructure, the electrical resistivity, and the transmittance of thin films with a layer structure of Ga-doped zinc oxide (GZO)/Al/ZnO buffer layer were investigated to develop transparent conductors for flexible display applications. The multilayer thin films were prepared by depositing ZnO, Al and GZO lms sequentially on polymer substrates by using a magnetron sputtering technique. The optimum Al interlayer thickness with which the lowest resistivity of the multilayer films was obtained without sacrificing the optical transmittance in the visible light region was found to be 10 nm. The GZO(200 nm)/Al(10 nm)/ZnO(50 nm) multilayer film deposited on polyethylene terephthalate (PET) exhibit an average electrical resistivity of 6.6 × 10-3 cm and a transmittance of ∽85 %. The effects of the thickness of an Al interlayer on the microstructure, the electrical resistivity, and the transmittance of thin films with a layer structure of Ga-doped zinc oxide (GZO)/Al/ZnO buffer layer were investigated to develop transparent conductors for flexible display applications. The multilayer thin films were prepared by depositing ZnO, Al and GZO lms sequentially on polymer substrates by using a magnetron sputtering technique. The optimum Al interlayer thickness with which the lowest resistivity of the multilayer films was obtained without sacrificing the optical transmittance in the visible light region was found to be 10 nm. The GZO(200 nm)/Al(10 nm)/ZnO(50 nm) multilayer film deposited on polyethylene terephthalate (PET) exhibit an average electrical resistivity of 6.6 × 10-3 cm and a transmittance of ∽85 %.