베이커리 전문점의 기능성 제품속성에 따른 지각된 가치가 구매행동에 미치는 영향 - 광주광역시를 중심으로 -

이관교,최상호 한국호텔리조트학회 2023 호텔리조트연구 Vol.22 No.2

This study is a study on the effect of perceived value on purchase behavior according to the functional product attributes of bakery specialty stores. From June 1st to June 30th, 2022, 275 copies (92 %) of the questionnaire was finally used for empirical analysis. Hypothesis verification was conducted using the program of SPSS 21.0. First, it was found that the functional product attributes of bakery specialty stores had a partially significant effect on the perceived value. Second, it was found that functional product attributes of bakery specialty stores had a partially significant effect on purchase behavior. Third, perceived value was found to have a significant effect on purchase behavior. Therefore, if product development is continued with an emphasis on the development of functional products with healthiness, quality, originality, and diversity, it gives consumers a sense of value and satisfaction and increases their desire to purchase, suggesting that purchasing behavior is achieved.

探究的 科學學習을 위한 中·高等學校 科學室 운영 실태에 대한 考察

李官敎 조선대학교 기초과학연구소 1981 自然科學硏究 Vol.4 No.1

The trend of modern science education is to study science investigatively by virtue of experiment in the laboratory, by the students themselves rather than the teacher. Accordingly, this paper is an attempt to grasp the actual condition of supervision of science laboratories in secondary schools through questionaires given to science teachers in secondary schools and an inquiry into improvement measures for establishing an investigative environment and furthering degree of the student participation in experimental learning.

경계점에서 파동의 속도변화 원인에 관한 고찰 : Coil Spring 파동을 중심으로

이관교 朝鮮大學校 師範大學 1974 師大論文集 Vol.5 No.-

When pulse is given to a coil spring, the cause of variables of velocity of pulse at the boundary of the coil spring and the velocity of pulse transmitted to the coil spring are proportional to the tension. Take two coil springs of equal length. If one of them is extended by force, the velocity of pulse of the extended coil spring is proportionally faster to extension than that of the unextended one. From the point of view of pulse transmission, each of the two coil springs may be said a completely different medium from the other. When two pulses collides each other, the velocity of pulse equals the composition of the two variable positions; the maximum variable position also equals the sum of the two pulses.

Hot Wall Epitaxy (HWE)법에 의한 CuInse₂ 단결정 박막 성장과 열처리 효과

이관교,홍광준,Lee Gyungou,Hong Kwangjoon 한국재료학회 2004 한국재료학회지 Vol.14 No.11

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

HgGa₂S₄ 단결정의 광학적 특성연구

이관교,이상열,강종욱,이봉주,김형곤,현승철,방태환 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.11

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

CdTe 단결정 성장과 광전기적 특성

이관교,유상하,홍광준 조선대학교 동력자원연구소 1987 動力資源硏究所誌 Vol.9 No.2

The single crystak if CdTe was grown by the Bridgman method and lattice constant = 6.48Å was determined from X-ray diffraction. Temperature dependence of the energy band gap have been found for measurements of transmission, photoconductivity and photocurrent variations versus wavelength at 50˚K∼300˚K. The energy band gap was measured to be Eg=1.61 eV at 0˚K by extrapolation method, and temperature coefficient β was -4.×10^-4 eV/˚K by photoconductivity experiments.

Hot Wall Epitaxy(HWE)법에 의한 AgGaSe2 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구

이관교 ( Gyoan Gyu Lee ),홍광준 ( Kwang Joon Hong ) 한국센서학회 2006 센서학회지 Vol.15 No.6

Comparison of the AM and FM wave forms

Lee,Kwan Kio,Wee,Sung Dong 朝鮮大學校 師範大學 1974 師大論文集 Vol.5 No.-

In every superposition wave, it can be shown that the sine waves collects into a single band wave through the experiment of an oscilloscope. In the AM waves the amplitude varies every hour but in the FM waves the frequency varies momentarily, and the right path modulaion in the AM waves indicates the ratio of the modulation, while the right path modulation in the FM waves indicates an index of the modulation. The frequency of the FM waves varies according to the signal of the modulation every hour, but the frequency of the AM waves does not vary. The FM wave is complex compared with the production of the band wave in AM waves. In AM and FM waves, we can see directly that the modulation of actual waves of takes place when the frequency deviation expresses a vector under the modulation condition. A vector of an FM wave seems to indicate a composition of a medium vector and a side vector.

Co 박막성장과 물성 : β-In_2S_3 Co Thin Films

서동주,이관교,이상열 조선대학교 기초과학연구소 1991 自然科學硏究 Vol.14 No.1

β-In_2S_3:Co thin film were grown on thoroughly cleaned glass substrate by the spray pyrolysis method. The substrate temperature during growth was maintained at 360℃. β-In_2S_3:Co thin film were grown uniformly on the glass substrate and the grain size was 1∼2㎛. The crystal structure of β-In_2S_3:Co thin film was a cubic system with a lattice constant a_o=10.660A˚. The absorption edge of optical density spectrum of β-In_2S_3:Co thin film were shifted to long wavelength region. The energy gap of β-In_2S_3:Co thin film decrease with increasing mole % of cobalt chloride hexahydrate, being 2.20, 2.14 and 2.05 eV at mole % of cobalt chloride hexahycrate.

Hot Wall Epitaxy (HWE)법에 의한 AgGa$Se_2$ 단결정 박막 성장과 특성

홍광준,이관교,박진성,Hong, Gwang-Jun,Lee, Gwan-Gyo,Park, Jin-Seong 한국재료학회 2001 한국재료학회지 Vol.11 No.5

AgGaSe$_2$ 단결정 박막은 수평 전기로에서 합성한 $AgGaSe_2$ 다결정을 증발원으로 하여, hot wall epitaxy (HWE) 방법으로 증발원과 기판 (반절연성-GaAs(100)) 의 온도를 각각 $630^{\circ}C$, $420^{\circ}C$로 고정하여 박막 결정 성장을 하였다. 10K에서 측정한 광발광 excition 스펙트럼과 이중결정 X-선 요동곡선 (DCRC) 의 반치폭 (FWHM )을 분석하여 단결정 박막의 최적 성장 조건을 얻었다. Hall효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293k에서 각각 4.89$\times$$10^{ 16}$/㎤, 129$\textrm{cm}^2$/V.s였다. 광전류 봉우리의 10K에서 단파장대의 가전자대 갈라짐 (splitting)에 의해서 측정된 $\Delta$C$_{r}$ (crystal field splitting)은 0.1762eV, $$\Delta$S_{o}$ (spin orbit splitting)는 0.2494eV였다 10K의 광발광 측정으로부터 고풍질의 결정에서 볼 수 있는 free excitors과 매우 강한 세기의 중성 주개 bound excitors등의 피크가 관찰되었다. 이때 중성 주개 bound ekciton의 반치폭과 결합에너지는 각각 BmeV와 14.1meV였다. 또한 Haynes rule에 의해 구한 불순물의 활성화 에너지는 141meV였다.rule에 의해 구한 불순물의 활성화 에너지는 141meV였다. The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at$ 630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is 2.1$\mu\textrm{m}$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of AgGaSe$_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89\Times10^{17}$ cm$^{-3}$ , 129cm2/V.s at 293K, respectively. From the Photocurrent spectrum by illumination of perpendicular light on the c-axis of the AgGaSe$_2$ single crystal thin film, we have found that the values of spin orbit splitting $$\Delta$S_{o}$ and the crystal field splitting $\Delta$C$_{r}$, were 0.1762eV and 0.2474eV at 10K, respectively. From the photoluminescence measurement of AgGaSe$_2$ single crystal thin film, we observed free excision (EX) observable only in high quality crystal and neutral bound exciton ($D^{o}$ , X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8mev and 14.1meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.ion energy of impurity was 141 meV.