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Growth of GaInP Layers on Ge Vicinal Substrates for Multi-junction Solar Cells
윤의준,Changjae Yang,Keun Wook Shin,Jungsub Kim,Jaeyel Lee,Chang-Zoo Kim,Ho Kwan Kang,Won-Kyu Park 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.4
In this research, we studied the growth of GaInP layers on Ge substrates for applications to multijunction solar cells. GaInP layers were grown on p-Ge(100) substrates with 6。 off toward <111> by using low pressure metal-organic chemical vapor deposition (MOCVD). The growth temperature,mass flow ratio of group III materials and V/III ratio were varied in order to grow high-quality GaInP epitaxial layers. A GaInP layer with a 1.6-nm root-mean-square roughness was obtained at a 55% In content. The doping profile in the GaInP and the Ge was characterized by using electrochemical capacitance voltage (ECV) measurements. The junction depth in the Ge substrate due to the diffusion of group V atoms from the GaInP layer was observed to be about 170 nm and did not increased significantly during the subsequent 1000-sec annealing.
Characteristics of Blue and Ultraviolet Light-Emitting Diodes with Current Density and Temperature
조재희,윤의준,하우진,김종규,박용조 대한금속·재료학회 2010 ELECTRONIC MATERIALS LETTERS Vol.6 No.2
Temperature and injection-current dependencies of radiant flux from blue and ultraviolet GaInN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) were investigated. Experimental results indicate that, compared to blue LEDs, the radiative efficiency of ultraviolet LEDs is relatively insensitive to injection current. It is expected that shallow potential minima caused by indium fluctuation in high-indium-containing GaInN quantum wells for blue LEDs result in a high radiative efficiency at low injection currents due to the localization of carriers; however, the radiative efficiency decreases rapidly with increasing injection current due to the delocalization of carriers.
Optical properties of InAs quantum dots grown on InP substrates
정현식,윤의준,Heedon Hwang,Kwangmin Park,Yu Jin Jeon 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.32
InAs quantum dots (QD's) grown on InP substrates are one of the promising materials systems for 1.55-m optical communication devices and QD infrared photodetectors. Compared to the InAs/GaAs pair, InAs/InP has a smaller (3.2 %) lattice mismatch, resulting in the formation of relatively larger QD's. We have studied the optical properties of the InAs/InP QD's using photoluminescence measurements. The dependence of the optical properties on the growth conditions, including growth temperatures, doping, and GaAs overlayers, is systematically investigated. It is found that there is an optimal temperature to obtain the maximum QD density, due to the competition between the surface diusion and the As/P exchange reaction.
Electrical Study on Indium-Rich InGaN/GaN Multi-Quantum-Well System
김은규,윤의준,김희진,J. S. Kim,권순용 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.5I
We studied the electrical properties of a 10-period InGaN/GaN multi-quantum-well (MQW) structure by using capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS) methods. Two energy states of the InGaN QW appeared, are at about 0.37 eV and the other at 0.43 eV from the conduction band edge of the GaN barrier. Band-to-band transition energies of 3.10 eV and 3.18 eV were found by using the PL measurements. A defect with an activation energy of 0.39 eV and a cross-section of 3.96 × 10.18 cm2 was also found in the GaN buffer layer. The energyband diagram of InGaN/GaN QW structure is discussed using the PL and the DLTS parameters, considering the existence of a electron capture barrier.?서`
김현진,윤의준 대한전자공학회 2003 전자공학회지 Vol.30 No.5
지금까지 GaN 계열 물질의 양자점 소자 관련 연구 동향을 양자점 구현 방식을 중점으로 하여 살펴보았다. GaN 계열 물질의 양자점을 구현하는 방법은 S-K 성장모드를 이용한 자발형성 양자점 구현법, anti-surfactaant를 이용하는 방법, selective epitaxy를 이용한 양자점 구현법 등이 시도되고 있다. 현재 GaN 계열 물질의 양자점 소자 연구는 아직 충분한 연구가 이루어지짖 않은 관계로 optical pumping을 통한 LD lasing 구현에 머무르고 있는 실정이다. 후 소자로의 응용을 위해서는 여러 가지 문제점이 해결되어야 한다. 우선 우수한 결정성을 지니는 양자점의 성장이 이루어져야 한다. 이외에도 각 구현 방법 별로 GaN 및 AlGaN 양자점 성장용 기판으로 많이 사용되는 높은 조성의 AlGaN 및 AlN의 doping 기술 개발, patterning 기술의 개선을 통한 미세 공정 개발 등의 여러 가지 과제들이 남아 있다. 그러나, 양자점이 지진 우수한 특성과 이를 이용한 높은 응용 가능성을 고려할 때 GaN 계열 양자점 소자의 전망은 밝다고 할 수 있다.