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Ta / NiFe / Cu / NiFe / FeMn / Ta계 스핀밸브 제조시 Ta / NiFe 계면원자섞임이 스핀밸브의 자기저항과 자기적 특성에 미치는 영향
오세충(S. C. Oh),이택동(T. D. Lee) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.5
Effect of degree of intermixing at the Ta/NiFe interface induced by varying applied substrate bias voltage during NiFe free layer deposition on change of magnetoresistance in Substrate/Ta/NiFe/Cu/NiFe/FeMn/Ta spin valve multilayers was investigated. It was found that the optimum NiFe free layer thickness showing a maximum MR increases with increasing the bias voltage. The increase of the optimum thickness was due to the increase of the intermixed layer thickness with a bias voltage. The weak ferromagnetic or non ferromagnetic intermixed layer plays as a spin-independent scattering region and does not contribute on spin-dependent scattering. The existence of the intermixed layer was proved by the means of electrical resistivity and magnetization changes. In the present study, the optimum effective free layer thickness which gives the highest MR ratio was a constant independent of the magnitude of the bias voltage we have used.