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양진모,심용석 대구대학교 과학기술연구소 1997 科學技術硏究 Vol.4 No.3
As the size of MOSFET becomes small due to recent advancements in integrated circuit fabrication technology, operating voltage goes low, typically 3.3∼5[V], by the limitation of semiconductor physics. However, high output-voltage is needed in several applications such as LCD of notebook computers, automobiles, communication systems, CD-ROM drivers, and medical instruments. There are several methods to obtain high-voltage integrated circuits. One is using a high voltage fabrication process and another is using a modified low voltage process which supports high voltage MOSFETs obtained by changing the geometry of low-voltage transistors. Since the above methods use non-standard fabrication techniques, the manufacturing cost goes high and the signal integrity might become hazardous. This paper, therefore, proposes a new design technique that enables the design of high-voltage inverter using only standard low-voltage MOSFETs. Circuits designed by this method, therefore, can be produced in a standard CMOS process and no additional production cost is required. The proposed method adds a kind of safety circuitry to the low-voltage transistors making up high-voltage circuits in such a way that all the transistors in the circuits operate within a given safe operating voltage. This paper discusses how to design the safety circuit and shows the validity of this design method through a design example using a circuit simulation program, SmartSpice. In order to convert a low-voltage signal to the high-voltage signal which is demanded in high-voltage circuits, a new level shifter architecture is proposed also. The simulation results shows the high-voltage output driver will be safely operating under many severe input and power supply conditions.