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윤성민,양신혁,변춘원,정순원,박상희,조두희,류민기,권오상,김병훈,황치선,조경익 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.58 No.52
We proposed and fabricated a transparent nonvolatile memory thin-film transistor (T-MTFT). The T-MTFT was composed of a ferroelectric copolymer gate insulator of poly(vinylidene fluoridetrifluoroethylene) [P(VDF-TrFE)] and an oxide semiconducting active channel of amorphous Al-Zn-Sn-O (AZTO). The fabrication procedures were so designed as to have both good transparency and high performances even at a low process temperature below 200 ℃. Consequently, the memory window with a gate voltage sweep of -10 to 10 V, the field-effect mobility in the linear region, the subthreshold swing, the on/off ratio, and the gate leakage current were obtained to be 8.6 V, 32.2 cm^2 V^(−1)·s^(−1), 0.45 V/dec, 10^8, and 10^(−12) A, respectively. Although the photo-response and the retention behaviors should be more improved and optimized, all these obtained characteristics were very promising for the future transparent electronics.
정우석,윤성민,양신혁,황치선 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.5
We developed methods for a process optimization of amorphous In-Ga-Zn-oxide (IGZO, atomic ratio of the IGZO target ◇ In : Ga : Zn = 1 : 1 : 1) for transparent thin-film transistors (TTFTs). During the sputtering process, the ratio of oxygen to the total gas mixture could be chosen in order to obtain better electronic properties, depending on both the RF power and the sputtering pressure. The post-anneal treatment at 300℃ for 1 hour in an O2 ambient was the most suitable condition for the interface between the IGZO channel and the Al2O3 gate insulator Finally, the introduction of a first step (FS) during the deposition was very effective in improving the electronic properties of the top-gate IGZO-TTFTs. Through these optimization methods, we achieved a field effect mobility of 11.7 cm2/sV, a sub-threshold-swing of 0.36 and a drain current on-off ratio of ~108 in the top-gate IGZO-TTFT. We developed methods for a process optimization of amorphous In-Ga-Zn-oxide (IGZO, atomic ratio of the IGZO target ◇ In : Ga : Zn = 1 : 1 : 1) for transparent thin-film transistors (TTFTs). During the sputtering process, the ratio of oxygen to the total gas mixture could be chosen in order to obtain better electronic properties, depending on both the RF power and the sputtering pressure. The post-anneal treatment at 300℃ for 1 hour in an O2 ambient was the most suitable condition for the interface between the IGZO channel and the Al2O3 gate insulator Finally, the introduction of a first step (FS) during the deposition was very effective in improving the electronic properties of the top-gate IGZO-TTFTs. Through these optimization methods, we achieved a field effect mobility of 11.7 cm2/sV, a sub-threshold-swing of 0.36 and a drain current on-off ratio of ~108 in the top-gate IGZO-TTFT.