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고효율 결정질 실리콘 태양전지 적용을 위한 p타입 에미터 표면의 전계 효과를 이용한 실리콘 산화막 패시베이션
박수영 ( Sooyoung Park ),심경배 ( Gyungbae Shim ),한상욱 ( Sanguk Han ),안시현 ( Shihyun Ahn ),박철민 ( Cheolmin Park ),조영현 ( Younghyun Cho ),김현후 ( Hyunhoo Kim ),이준신 ( Junsin Yi ) 한국신·재생에너지학회 2017 신재생에너지 Vol.13 No.4
The surface passivation is one of the crucial steps to achieve high conversion efficiencies in c-Si solar cells. A thermally stable thin film with a negative charge (for p-type surface) passivation layer is required to develop a good front passivation suitable for n-type c-Si solar cells. Silicon suboxide (SiOX) layer using PECVD provides a good passivation layer which has low temperature process and charge control in thin-film layer. In this paper, a PECVD stack layer consisting of SiOX and SiNX was employed for front side passivation. The optimal refractive index of SiOX and SiNX were found by varying the silane (SiH<sub>4</sub>), ammonia (NH<sub>3</sub>) and nitrous oxide (N<sub>2</sub>O) gas ratio for decrease optical loss. -1.71 × 10 <sup>11</sup> cm<sup> -2</sup> of negative charge (Q<sub>f</sub>) and 5×10 10 cm <sup>-2</sup> eV <sup>-1</sup> of D<sub>it</sub> (interface trap density) were obtained at 10 nm thick SiOX thin-film. With this optimized SiOx/SiNx stack layer on p <sup>+</sup> surface wafer using PECVD, the effective lifetime of 280 ㎲ and implied VOC of 690 mV were achieved. It is expected that the efficiency of the n-type silicon solar cell can be improved by applying the optimized SiOx condition to the front passivation layer.
N-type 고효율 태양전지용 Boron Diffused Layer의 형성 방법 및 특성 분석
심경배,박철민,이준신,Shim, Gyeongbae,Park, Cheolmin,Yi, Junsin 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.3
N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.
안희수,심경신,신홍렬,AN, HUISOO,SHIM, KYUNGSIN,SHIN, HONG-RYEOL The Korean Society of Oceanography 1994 韓國海洋學會誌 Vol.29 No.2
The characteristics and fluctuations of structures and spatial distributions of warm eddies (anticyclonic eddies) in the southwestern part of the East Sea (the Japan Sea) are discussed based on the data gathered y the Fisheries Research and Development Agency, Korea from 1967 to 1968. The warm eddies existed very often in the southwest of the Ullung Island. The warm eddies are elliptical in shape and the mean size is about 130 km in diameter. Bimonthly distributions of warm eddies, the largest value of observed frequency and diameter in August and the least in June, indicate that the generation of the warm eddy is related with the development of the East Korean Warm Current. The warm eddies move west, north or southward with 0.80∼2.50 cm/sec or stay over a few months at the same place southwest of the Ullung Island. Movement of warm eddies may be influenced by the neighboring currents, the Rossby wave and the topography. The relationship between the position of warm eddies and the bottom topography suggests that the development and the movement of warm eddies are controlled by the Ullung Basin. The warm eddies should be divided into two groups. One group is the shallow warm eddy with strong baroclinic characteristics and the other is the deep one with strong Barotropic characteristics. The shallow group seems to be closely related with positive values (in summer) of the sea level difference between Pusan and Mozi (the Tsushima Current), while the deep group has no relation with that.