http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
H₂S 가스로 유황처리된 GaAs 표면의 AES 및 XPS 분석
신장규(Jang-Kyoo Shin),이동근(Dong-Geun Lee),김항규(Hang-Kyoo Kim) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.3
본 연구에서는 HCl 또는 NH₄OH로 산화막을 식각한 GaAs 표면에 H₂S 가스를 이용하여 유황처리하였다. 표면의 화학적 조성 및 결합상태를 측정하기 위하여 AES(Auger electron spectroscopy) 및 XPS(X-ray photoelectron spectroscopy)를 사용하였다. 시편들은 30, 200 및 350℃로 가열하면서 H₂S 가스와 반응시켰다. 이때 유황은 GaAs 표면의 Ga 원자 및 As 원자와 화학결합을 형성하고 있음이 밝혀졌다. 또한 350℃로 가열된 시편이 30℃ 또는 200℃로 가열된 시편보다 표면에 결합된 유황의 양이 많은 것으로 나타났다. 아울러 (NH₄)₂S 수용액 또는 Na₂S 수용액으로 유황처리된 경우와 동일하게 H₂S 가스로 유황처리된 GaAs 표면에서는 Ga 산화막 및 As 산화막이 거의 관측되지 않았다. This paper presents experimental results on the sulfur treatment using H₂S gas to HCl-etched and NH₄OH-etched GaAs surfaces. AES(Auger electron spectroscopy) and XPS(x-ray photoelectron spectroscopy) spectra were obtained in order to determine the surface chemical species and their bonding states. The experiments were conducted with H₂S exposed samples at substrate temperatures of 30, 200, and 350℃. Sulfur is shown to bond to both Ga and As. The H₂S exposed surfaces heated at 350℃ had a higher sulfur coverage than those that were heated at 30℃ or 200℃. Like (NH₄)₂S or Na₂S solution treated samples, Ga or As oxide was not found after the H₂S treatment.
구탁모,신장규,김채영,Koo, Tak-Mo,Shin, Jang-Kyoo,Kim, Che-Young 대한전자공학회 1984 전자공학회지 Vol.21 No.4
Hyperstability 이론에 의한 연속시간 시스템의 제어 알고리즘을 이산시간 선형시변 시스템의 적응제어에 직접 이용하여 시스템의 설계를 간단하게 하였다. 기준인력으로서 계단함수와 램프함수를 인가하여 설계된 시스템의 동작특성을 조사해 본 결과 공정의 출력이 모델의 출력에 적응함을 알 수 있었다. A method is proposed for the adaptive control of linear time varying discrete systems. The stability problem of the model reference adaptive control systems is considered by means of the properties of hypergtability, The hyperstability approach also allows for solutions to the adaptation mechanism. Employing the principles of the continuous time case with output feedback renders it to the discrete case which simplified the system design. The system response is obtained by applying the ramp and step input as a reference signal to the system respectively. With checking the adaptation time for ramp and step input the validity of proposed algorithm was confirmed by the computer simulation.
n-ITO/p-PSL 이종접합형 광검출 소자의 제조 및 그 특성
김항규,신장규,이종현,송재원 ( Hang Kyoo Kim,Jang Kyoo Shin,Jong Hyun Lee,Jae Won Song ) 한국센서학회 1995 센서학회지 Vol.4 No.1
n-ITO/p-PSL heterojunction photodetector have been fabricated on the Si wafer by using ITO(indium tin oxide) and PSL(porous silicon layer). They were anodized selectively by using silicon nitride and Ni-Cr/Au and were passivated by using ITO as well as being isolated by using mesa structure. With white light from 0 to 3000 Lux, the photocurrent varied linearly with incident light intensity. The reverse characteristics of fabricated devices were very stable up to a bias voltage of -40V and dark current density was about 40nA/㎟. When the device was exposed by Xe lamp whose wavelength range from 400nm to 1100nm, the maximum photo responsivity was about 0.6A/W between 600 and 700nm. Variation of the characteristics of fabricated devices after 5 weeks was negligible.
김항규,신장규,정우철,남태철 ( Hang Kyoo Kim,Jang Kyoo Shin,Woo Chul Jung . Tae Chul Nam ) 한국센서학회 1994 센서학회지 Vol.3 No.1
A SIMOX SOI Hall sensor has been fabricated and its characteristics were measured at temperatures between 20℃ and 260℃. Output Hall voltage varied linearly with supplied current, showing good linearity. The Hall voltage and the offset voltage initially increased slightly and then decreased with temperature due possibly to the electron mobility variation with temperature. Nearly constant product sensitivity throughout the temperature range indicates that this Hall sensor could be used for high temperature applications.
장준영 ( Juneyoung Jang ),이제원 ( Jewon Lee ),권현우 ( Hyeunwoo Kwen ),서상호 ( Sang-ho Seo ),최평 ( Pyung Choi ),신장규 ( Jang-kyoo Shin ) 한국센서학회 2021 센서학회지 Vol.30 No.2
In this study, the sensitivity of an active pixel sensor (APS) was adjusted by employing a gate/body-tied (GBT) p-channel metal-oxide semiconductor field-effect transistor (PMOSFET)-type photodetector with a transfer gate. A GBT PMOSFET-type photodetector can amplify the photocurrent generated by light. Consequently, APSs that incorporate GBT PMOSFET-type photodetectors are more sensitive than those APSs that are based on p-n junctions. In this study, a transfer gate was added to the conventional GBT PMOSFET-type photodetector. Such a photodetector can adjust the sensitivity of the APS by controlling the amount of charge transmitted from the drain to the floating diffusion node according to the voltage of the transfer gate. The results obtained from conducted simulations and measurements corroborate that, the sensitivity of an APS, which incorporates a GBT PMOSFET-type photodetector with a built-in transfer gate, can be adjusted according to the voltage of the transfer gate. Furthermore, the chip was fabricated by employing the standard 0.35 μm complementary metal-oxide semiconductor (CMOS) technology, and the variable sensitivity of the APS was thereby experimentally verified.
고감도 능동픽셀센서를 위한 PMOSFET 광검출기의 특성
서상호,박재현,이준규,왕인수,신장규,조영창,김훈,Seo, Sang-Ho,Park, Jae-Hyoun,Lee, June-Kyoo,Wang, In-Soo,Shin, Jang-Kyoo,Jo, Young-Chang,Kim, Hoon 한국센서학회 2003 센서학회지 Vol.12 No.4
고감도 능동픽셀센서(active pixel sensor, APS)를 위한 PMOSFET 광검출기를 설계 및 제작하였다. 이 센서는 5V의 전원 전압을 사용하며, 1-poly 2-metal $1.5{\mu}m$ CMOS공정으로 제작하였다. 사용된 광검출기는 빛에 대한 감도를 높이기 위해서 n-well과 게이트를 연결한 PHOSFET을 사용하였다. 제작된 광검출기는 일반 MOSFET이 $I_{DS}-V_{DS}$ 곡선과 유사한 특성을 가진다. PMOSFET 광검출기를 기본으로 하여 설계된 1차원 이미지 센서는 16개의 픽셀로 구성되어 있으며, 단위 픽셀은 하나의 PMOSFET 광검출기와 4개의 NMOSFET으로 구성되어있다. 단위 픽셀의 크기는 $86{\mu}m{\times}90.5{\mu}m$이며, 개구율은 약 12%이다. A PMOSFET photodetector for highly-sensitive active pixel sensor(APS) is presented. This sensor uses 5V power supply and has been designed and fabricated using I-poly and 2-metal $1.5{\mu}m$ CMOS technology. The feature of a PMOSFET photodetector is that the polysilicon gate of the PMOSFET was connected to n-well, in order to increase the photo sensitivity. The designed MOS photodetector has similar $I_{DS}-V_{DS}$ characteristics with a standard MOSFET. One dimensional image sensor with 16 pixels based on the PMOSFET photodetector has also been designed and fabricated. Unit pixel of the designed sensor consists of a PMOSFET photodetector and 4 NMOSFETs. Unit pixel area is $86{\mu}m{\times}90.5{\mu}m$ and its fill factor is about 12%.
정인식,김진섭,이정희,이종현,신장규,박세일,권성원,Jung, In-Sik,Kim, Jin-Sup,Lee, Jung-Hee,Lee, Jong-Hyun,Shin, Jang-Kyoo,Park, Se-Il,Kwon, Sung-Won 대한전자공학회 1999 電子工學會論文誌, D Vol.d36 No.9
박막형 다중접합 열전변환기의 시간에 따른 출력 전압 변화를 감소시키기 위해 벌크의 저항온도계수가 매우 적은 EVANOHM-S 합금을 박막 히터재료로 사용하였고, 또한 Seebeck 계수차이가 비교적 작은 크로멜-알루멜 열전쌍을 박막 열전퇴(thermopile)의 열전요소로 하였다. EVANOHM-S 박막 히터의 저항온도계수는 약 $1.4 {\times} 10^4/^{\circ}C$ 였고, 크로멜-알루멜 박막 열전쌍의 Seebeck 계수차이는 약 $38 {\mu}V/K$였다. 열전변환기의 출력 전압 변화는 공기중에서 처음 120초 동안 약 0.06%였고, 약 5분간이상 히터의 예열후 출력전압 변화는 현저히 감소하였다. 10 Hz ~ 10 kHz의 주파수 범위에서 열전변환기의 교류-직류 전압 및 전류 변환 오차범위는 각각 ${\pm}$1.6 ppm 및 ${\pm}$0.7 ppm이었고, 10Hz 이하 또는 10 kHz 이상의 주파수에서는 교류-직류 변환오차가 크게 증가하였다. For the purpose of reducing the output voltage fluctuation of thin film multijunction thermal converter, EVANOHM alloy-S and chromel-alumel thermocouple were used as a thin film heater material and as a thermoelement of thrmopile, respectively. The temperature coefficient of the resistance of thin film EVANOHM alloy-S heater was about $1.4 {\times} 10^4/^{\circ}C$, which is very small compared to other materials, and thin film chromel-alumel thermocouple showed relatively small difference of the Seebeck coefficients about $38 {\mu}V/K$. The output voltage fluctuation of the thermal converter was about 0.06% for the initial 120 seconds in air and decreased considerably after preheating for 5 minutes or more. The respective AC-DC voltage and current transfer error ranges of the thermal converter were about ${\pm}$1.6 ppm and ${\pm}$0.7 ppm in the frequency range from 10Hz to 10 kHz and increased remarkably below 10 Hz or above 10 kHz.