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Formax 매질을 이용한 이동통신 단말기용 삼중대역 플라스틱 칩 안테나에 관한 연구
이영훈,송성해,Lee, Young-Hun,Song, Sung-Hae 한국정보통신학회 2007 한국정보통신학회논문지 Vol.11 No.12
본 논문은 휴대 단말기에 적용할 수 있는 삼중대역(Triple-band) 프라스틱 칩 안테나에 관하여 연구하였다. 프라스틱 칩은 PVC(Polyvilyl chloride)계열의 Foamex 매질을 사용하였으며, 전기적인 특성은 유전율이 1.9이고, 절연밀도는 112KV/cm이다. 프라스틱 칩 안테나는 세라믹 칩 안테나보다 잘 파손되지 않고, 이득과 효율이 좋은 장점을 가지고 있다. 본 논문에서는 4종류의 삼중대역 프라스틱 칩 안테나를 제작하고 실험하였다. 실험 결과 삼중대역에서 공진하였고, 안테나 이득은-2dB이상이고, 안테나 패턴은 일반적인 칩 안테나와 비슷한 전 방향 특성을 갖는다. 따라서 Foamex 매질을 이용하여 구현된 안테나는 삼중대역용 휴대폰과 다양한 무선통신시스템에 적용될 수 있다. In this paper, triple-band plastic chip antennas for mobile terminal are investigated. Plastic chip antenna is composed of Foamex material with circle of PVC(Polyvilyl chloride). For its electric characteristics, the dielectric constant is 1.9, the insulation intensity is 112KV/cm. Plastic chip antennas are don't tend to break easily against to external shock, have more gain and efficiency than ceramic chip antennas. Triple-band plastic chip antennas of four type are implemented and experimented. From the experiments results, the antenna resonate at the triple-band, the gain of the antennas has about above -2dB, the pattern is ommidirectional the same as the conventional antennas. So, the antennas realized with Foamex material will be application for mobile phone antenna operated at the triple band which is cellular band and Korea-PCS band and ISM band or the antenna for other wireless communication system.
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SiGe 에피택셜 베이스 층을 이용한 HBT의 특성에 관한 연구
신창호,송성해 금오공과대학교 2008 論文集 Vol.29 No.-
This paper describes an experimental research on the HBT process that uses a SiGe epitaxy layer, and also a HBT with maximwn cutoff frequency of ffiGHz followed by a discussion on their characteristics. The HBT applied in this research, as an npn structure, used a base with Si₁-_(x)Ge_(x) epitaxial layer. The Si₁-_(x)Ge_(x) epitaxy layer used in the base area, as a graded Ge profile, base depth as W_(B)=650A and Ge mole fraction as x=0.12. The electrical characteristics on the fabricated chip were shown in C-E breakdown voltage as 3.92V, current gain as 165, and maximnn cutoff frequency as ffiGHz. As a result, this research acquired the design and process technology that can produce a HBT using the Si₁-_(x)Ge_(x) layer as its base by using the silicon process technology.
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비냉각 열 영상 시스템용 BSCT 320×240 IR-FPA의 구현
姜大錫,송성해,신경욱,박재우,윤동한,韓明洙 대한전자공학회 2002 電子工學會論文誌-SD (Semiconductor and devices) Vol.39 No.11
BSCT 320×240 IRFPA detector module is implemented, which is a key component in uncooled thermal imaging systems. The detector module consists of two parts, infrared sensitive pixel array and read-out integrated circuit(ROIC). The BSCT 320×240 pixels are made by laser scribe process and 10-㎛ micro-bump to satisfy 50-㎛ pitch and 95-% fill-factor. The ROIC has been designed to electrically address the pixels sequentially and to improve signal-to-noise ratio with single transistor amplifier, HPF, tunable LPF and clamp circuit. The fabricated hybrid chip of detector and ROIC has been mounted on the TEC built-in ceramic package for more stable operation and tested for lots of electrical and optical properties. The IRFA sample has shown successful properties and met with good results of fill-factor, detectivity and responsivity. 적외선 열 영상 system에서 가장 핵심이 되는 BSCT 320X240 IRFPA를 구현하였다. 검출기 module은 두 개의 부분, 즉 적외선 감지 pixel의 array와 감지된 신호를 읽어내는 ROIC로 구성된다. 50-㎛의 pitch와 95-%의 fill-factor를 만족하도록, laser scribe공정과 10-㎛ 크기의 ball을 갖는 micro bump공정을 적용하였다. ROIC는 선택된 신호를 읽어서 순차적으로 출력하게 설계되었으며, 단일 transistor amplifier, HPF, tunable LPF 그리고 clamp circuit를 삽입하여 SNR이 개선되도록 설계하였다. Detector와 ROIC의 결합으로 제작된 hybrid chip은 좀더 안정한 동작을 하도록 TEC가 내장된 ceramic package에 탑재하였다. 제작된 IRFPA sample은 원하는 특성을 만족하였으며, 특히 fill-factor, 탐지도, 반응도면에서 설계의 목표에 잘 근사함을 알 수 있었다.
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김동연,송성해,신창호 金烏工科大學校 1997 論文集 Vol.18 No.-
Thermal oxidation of strained ?? layer grown by MBE(Molecular Beam Epitaxy) with Ge mole fractions of x=0.05, x=0.10, x=0.15, and x=0.20 were examined in view points of growth rate, and Ge profile after oxidation. Then the samples were compared with oxidation rate of pure silicon. During oxidation, the Ge-rich layer was formed by the segregation of Ge at the interface of ??/SiO₂. The oxide of ?? layer was found to be SiO₂only. The dry oxidation rate was equal to that of pure Si regardless of Ge mole fraction at 700℃ and 800℃, while it was decreased at both 900℃ and 1000℃ as the Ge mole fraction was increased. The dry oxidation rates were reduced for heavy Ge concentration, and large oxidation time. In the parabolic growth region of ?? oxidation. The activation energy are slightly enhanced due to the presence of Ge-rich layer.
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(lll) 기판의 실리콘 단결정층 성장시 발생하는 패턴 이동 현상의 분석
백문철,조경익,송성해,Baek, Mun-Cheol,Jo, Gyeong-Ik,Song, Seong-Hae 대한전자공학회 1984 전자공학회지 Vol.21 No.4
A model analysis of pattern shift in the epitaxial growth of silicon on (111) substrates was performed. The growth rate anisotropy was considered as the most important affecting factor of pattern shift, and for the model establishment the off angle of the substrate and the process temperature were taken as the variables. We derived a theoretical equation of pattern shift by assuming the growth rate anisotropy as the trigonometric sine function of the off angle of the substrate and defining the growth rate anisotropy factor related to the process temperature. The pattern shift ratio calculated by this model had the same tendency with the experimental ones, which, however, were about twice greater than those. It was supposed that this discrepailcy was due to the second order affecting factor such as facetting and step broadening which had been exluded in model establishment.
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마스크 오정렬 및 결정 결함이 PN 접합 아이솔레이션의 항복 특성에 미치는 영향
조경익,백문철,송성해,Jo, Gyeong-Ik,Baek, Mun-Cheol,Song, Seong-Hae 대한전자공학회 1984 전자공학회지 Vol.21 No.2
PN 접합 아이솔레이션의 항복 특성, 특히 소프트 항복 현상에 대해, 아이솔레이tus 마스크를 오정렬시킨 정도와 공정중 생성된 결함들의 영향을 고찰하였다. 그 결과, 아이솔레이션 마스크를 인위적으로 오정렬시킴으로써, 매입층과 아이솔레이션 사이의 간격을 변화시켰을 때, 이것은 항복 전압에만 영향을 줄 뿐 소프트 항복 현상과는 무관하였다. 소프트 항복 현상, 즉 항복 전압 이하에서 역방향 누설 전류가 크게 증가하는 것은 소자 제조 공정중 생성된 산화 적층 결함(OSF)에 의한 것으로 나타났다. Breakdown characteristics, specifically, soft breakdown phenomena of the PN junction isolation were studied in terms of their dependence on the mask misaliglment and the amount of process-related defects. Varying the distance between the buried layer and the isolation by intentional misalignment of the isolation masts had no effects on the soft breakdown phenomena except for the change of the breakdown voltage. The soft breakdown phenomena, as characterized as a state of excessive reverse current below the breakdown voltage, were found out to result mainly from the oxidation-induced stacking faults (OSF) introduced during the fabrication process.
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