http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
A 12 mW ADPLL Based G/FSK Transmitter for Smart Utility Network in 0.18 mm CMOS
박형구,김홍진,이동수,Chang-Zhi Yu,구현철,이강윤 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.4
This paper presents low power frequencyshift keying (FSK) transmitter using all digital PLL(ADPLL) for smart utility network (SUN). In order tooperate at low-power and to integrate a small die area,the ADPLL is adopted in transmitter. The phase noiseof the ADPLL is improved by using a fine resolutiontime to digital converter (TDC) and digitallycontrolled oscillator (DCO). The FSK transmitter isimplemented in 0.18 μm 1-poly 6-metal CMOStechnology. The die area of the transmitter includingADPLL is 3.5 mm2. The power consumption of theADPLL is 12.43 mW. And, the power consumptions ofthe transmitter are 35.36 mW and 65.57 mW whenthe output power levels are -1.6 dBm and +12 dBm,respectively. Both of them are supplied by 1.8 Vvoltage source. The frequency resolution of the TDCis 2.7 ps. The effective DCO frequency resolution withthe differential MOS varactor and sigma-deltamodulator is 2.5 Hz. The phase noise of the ADPLLoutput at 1.8 GHz is -121.17 dBc/Hz with a 1 MHzoffset.
A Small-Area Solenoid Inductor Based Digitally Controlled Oscillator
박형구,김소영,이강윤 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.3
This paper presents a wide band, fineresolutiondigitally controlled oscillator (DCO) withan on-chip 3-D solenoid inductor using the 0.13 μmdigital CMOS process. The on-chip solenoid inductoris vertically constructed by using Metal and Vialayers with a horizontal scalability. Compared to aspiral inductor, it has the advantage of occupying asmall area and this is due to its 3-D structure. Tocontrol the frequency of the DCO, active capacitorand active inductor are tuned digitally. To cover thewide tuning range, a three-step coarse tuning schemeis used. In addition, the DCO gain needs to becalibrated digitally to compensate for gain variations. The DCO with solenoid inductor is fabricated in 0.13μm process and the die area of the solenoid inductoris 0.013 mm2. The DCO tuning range is about 54 % at4.1 GHz, and the power consumption is 6.6 mW froma 1.2 V supply voltage. An effective frequencyresolution is 0.14 kHz. The measured phase noise ofthe DCO output at 5.195 GHz is -110.61 dBc/Hz at 1MHz offset.
Label-free glucose sensing with temperature modulation
박형구,윤형서,지재훈,심형보,김재훈,전성찬 한국물리학회 2014 Current Applied Physics Vol.14 No.11
Label-free detection of glucose molar concentration was carefully studied with a device which was designed to modulate temperature in a local area by Joule heating from room temperature to human body temperature. Very small amount of glucose concentration up to sub-millimolar range was detected based on the glucose concentration dependent electrical resistance change with the temperature modulation since it allowed more electrical conductivity enhancement for lower glucose concentration.
A Wide Output Range, High Power Efficiency Reconfigurable Charge Pump in 0.18 m BCD process
박형구,장정아,조성훈,이주리,김상윤,Honey Durga Tiwari,부영건,황금철,양영구,이강윤,서문교 대한전자공학회 2014 Journal of semiconductor technology and science Vol.14 No.6
This paper presents a wide output range, high power efficiency reconfigurable charge pump for driving touch panels with the high resistances. The charge pump is composed of 4-stages and its configuration automatically changes based on the required output voltage level. In order to keep the power efficiency over the wide output voltage range, internal blocks are automatically activated or deactivated by the clock driver in the reconfigurable charge pump minimizing the switching power loss due to the On and Off operations of MOSFET. In addition, the leakage current paths in each mode are blocked to compensate for the variation of power efficiency with respect to the wide output voltage range. This chip is fabricated using 0.18 m BCD process with high power MOSFET options, and the die area is 1870 m x 1430 m. The power consumption of the charge pump itself is 79.13 mW when the output power is 415.45 mW at the high voltage mode, while it is 20.097 mW when the output power is 89.903 mW at the low voltage mode. The measured maximum power efficiency is 84.01 %, when the output voltage is from 7.43 V to 12.23 V.