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김미목 ( Mi Mok Kim ),남태철 ( Tae Chul Nam ),이영태 ( Young Tae Lee ) 한국센서학회 2004 센서학회지 Vol.13 No.3
N/A A pressure sensor for high temperature was fabricated by using a SDB(Silicon-Direct-Bonding) wafer with a Si/SiO2/ Si structure. High pressure sensitivity was shown from the sensor using a single crystal silicon of the first layer as a piezoresistive layer. It also was made feasible to use under the high temperature as of over 120℃, which is generally known as the critical temperature for the general silicon sensor, by isolating the piezoresistive layer dielectrically and thermally from the silicon substrate with a silicon dioxide layer of the second layer. The pressure sensor fabricated in this research showed very high sensitivity as of 183.61iV/V kPa, and its characteristics also showed an excellent linearity with low hysteresis. This sensor was usable up to the high temperature range of 300℃.
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SOI 멤브레인과 트랜치 구조상에 제작된 발열저항체형 마이크로 유량세선의 특성
정귀상,김미목,남태철 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.8
This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.
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박재성(Jae-Sung Park),최득성(Deuk-Sung Choi),김미목(Mi-Mok Kim) 대한전자공학회 2013 전자공학회논문지 Vol.50 No.6
본 연구는 Si/SiO₂/Si-sub 구조의 SDB(silicon-direct-bonding) 웨이퍼를 이용한 고온용 압력센서의 제작 및 특성을 연구한 것이다. 압력센서는 SDB 웨이퍼의 첫 번째 층의 단결정 실리콘을 이용하여 압저항을 제작하기 때문에 감도가 우수하며, 두 번째 층의 산화막으로 압저항과 실리콘 기판을 절연 분리하여, 일반적인 실리콘소자의 사용 온도 한계인 120℃ 이상의 고온에서도 사용이 가능하다. 제작된 압력센서는 고감도의 압력감도 및 센서 출력의 직선성 및 히스테리시스 특성이 매우 우수함을 알 수 있었다. In this paper, the pressure sensor usable in a high temperature, using a SDB(silicon- direct-bonding) wafer of Si/SiO₂/Si-sub structure was provided and studied the characteristic thereof. The pressure sensor produces a piezoresistor by using a single crystal silicon as a first layer of SDB wafer, to thus provide a prominent sensitivity, and dielectrically isolates the piezoresistor from a silicon substrate by using a silicon dioxide layer as a second layer thereof, to be thus usable even under the high temperature over 120℃ as a limited temperature of a general silicon sensor. The measured result for a pressure sensitivity of the pressure sensor has a characteristic of high sensitivity, and its tested result for an output of the sensor further has a very prominent linearity and hysteresis characteristic.
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