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김남오,민완기,김형곤,오금곤,현승철,Kim, Nam-oh,Min, Wan-Ki,Kim, Hyung-gon,Oh, Gum-kon,Hyun, Seung-cheol 대한전기학회 2004 전기학회논문지 P Vol.53 No.1
The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).
김남오,김형곤,김덕태,송호준,Kim, Nam-Oh,Kim, Hyung-Gon,Kim, Duck-Tea,Sung, Heo-Jun 대한전기학회 2003 전기학회논문지 P Vol.52 No.2
$Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals were grown by the chemical transport reaction(CTR) method. They were crystallized in the monoclinic structure. These temperature dependence of the optical energy gap were closely investigated over the temperature range 10[K]~300[K]. The direct energy gaps of $Zn_4SnSe_6$ and $Zn_4SnSe_6$:$Co^{2+}$ single crystals were given by 2.146[eV] and 2.042[eV] at 300[K]. The temperature dependence of the optical energy gap is well presented by the Varshni equation.
수직 Bridgman법으로 제작한 $\beta-In_2Te_3$ 단결정의 광학적 전기적 특성
김남오,이강연,정병호,최연옥,신화영,조금배,Kim, Nam-Oh,Lee, Kang-Yeon,Jeong, Byeong-Ho,Choi, Youn-Ok,Shin, Hwa-Young,Cho, Geum-Bae 대한전기학회 2009 전기학회논문지 P Vol.58 No.4
The $\beta-In_2Te_3$ single crystal was grown by vertical Bridgman method. The $\beta-In_2Te_3$ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be $a\;=\;0.617\;{\AA}$. The direct optical energy gap ($E_g$) was found to be 1.11 ev at 300 K. Raman spectra peak of $\beta-In_2Te_3$ single crystal showed the low $E_{LO}$ mode at $105\;cm^{-1}$. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be $1.8\;{\times}\;10^{-2}\;{\Omega}^{-1}cm^{-1}$ at 300 K. The activation energy was found to be 0.51 eV.
김남오(Nam-Oh Kim),민완기(Wan-Ki Min),정원태(Won-Tae Jung),김영동(Young-Dong Kim) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.11
Realistic deformation of computer simulated anatomical structures is computationally intensive. As a result, simple methodologies not based in continuum mechanics have been employed for achieving real time deformation of virtual reality. Since the graphical interpolations and simple spring models commonly used in these simulations are not based on the biomechanical properties of tissue structures, these "quick and dirty"methods typically do not accurately represent the complex deformations and force-feedback interactions that can take place during surgery. Finite Element (FE) analysis is widely regarded as the most appropriate alternative to these methods. However, because of the highly computational nature of the FE method. its direct application to real time force feedback and visualization of tissue deformation has not been practical for most simulations. If the mathematics are optimized through pre-processing to yield only the information essential to the simulation task. run-time computation requirements can be drastically reduced. To apply the FEM. We examined a various in verse matrix method and a deformed material?model is produced and then the graphic deformation with this model is able to force. As our simulation program is reduced by the real-time calculation and simplification because the purpose of this system is to transact in the real time.
수직 Bridgman법으로 제작한 β-In₂Te₃ 단결정의 광학적 전기적 특성
김남오(Nam-Oh Kim),이강연(Kang-Yeon Lee),정병호(Byeong-Ho Jeong),최연옥(Youn-Ok Choi),신화영(Hwa-Young Shin),조금배(Geum-Bae Cho) 대한전기학회 2009 전기학회논문지 P Vol.58 No.4
The β-In₂Te₃ single crystal was grown by vertical Bridgman method. The β-In₂Te₃ single crystal had a face centered cubic(fcc) structure. The lattice constants were found to be a = 0.617 Å. The direct optical energy gap (Eg) was found to be 1.11 ev at 300 K. Raman spectra peak of β-In₂Te₃ single crystal showed the low ELO mode at 105 ㎝?¹. The electrical conduction type was measured by the thermal method and was p-type. The electrical conductivity was found to be 1.8 × 10?² Ω?¹㎝?¹ at 300 K. The activation energy was found to be 0.51 eV.
김남오(Nam-Oh Kim),민완기(Wan-Ki Min),김병철(Byung-Chal Kim),오금곤(Gum-Kon Oh),이강연(Kang-Yeon Lee) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.11
In this paper, a β-FeSi₂ films with thicknesses of about 5㎛ were deposited on n-type silicon(111) substrates by RF magnetron sputtering method using a FeSi₂ target(99.99%). The wafers were rotated at 10rpm with the FeSi₂ target, flow rate of argon of 50sccm, substrate temperature of 100℃, RF power of 60 watts, deposition time of 60 minutes, and the vacuum of 7.5×10?³ Torr. The annealing treatments of a β-FeSi₂ thin film were performed from 600, 800 and 900℃ for 12h in air ambient by an electric furnace. In order to investigate the surface morphology of β-FeSi₂ thin films were measured with a atomic force microscopy(AFM). The Hall effect measured at low temperatures.