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다양한 데이터 트래픽을 갖는 이동 애드혹 네트워크용 라우팅 프로토콜의 성능 분석
김기완,Kim, Kiwan 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.2
MANET(Mobile Ad Hoc Network) is the structure in which a source node communicates with a destination node by establishing a route with neighbor nodes without using the existing wired or wireless network. Therefore, the routing protocol for MANET must correspond well to changes in the channel state of moving nodes, and should have simple operation, high reliability, and no routing loop. In this paper, the simulation was perform by using a traffic model with on/off two states provided by the NS-3 network simulator. Also, the duration of the ON state and the duration of the OFF state used the traffic where inter arrival time of data is irregular by generating random values with constant, exponential distribution, and Pareto distribution. The performance of the DSDV, OLSR, and AODV protocols was compare and analyzed using the generated traffic model.
김기완 신라대학교 (부산여자대학교) 2015 論文集 Vol.60 No.-
본 연구의 목적은 열전냉각소자를 열전발전소자로 응용하여 조리기구 폐열을 전력에너지화하여 야외 LED 조명, 휴대용 소형 선풍기, 전자기기 배터리 충전에 활용할 수 있는가를 알아보고자 한것이다. 알루미나 (140×400×3mm) 2장으로 흡열과 발열에 사용하고, 열전소자(40×40×4mm) 2개를 사용하여 열전발전에 대한 보편적인 성능을 실험하였다. 물 가열에 대한 실험 결과, 물의 양에 무관하게 온도차가 75℃ 전후로 발전이 시작되었다. 발생전압은 최고 약 5.18V, 평균 약 3.8V가 나왔고 전류는 최고 약 91.8mA, 평균 약 65.03mA가 나타났다. Li-ion 배터리(3.7V, 800mAH) 충전의 경우 1/3 충전을 이루는데 약 10분 정도가 소요되었다
드레인 오프셋트 다결정실리콘 박막트랜지스터의 전류-전압 특성
김기완,마대영,이인찬 경북대학교 전자기술연구소 2001 電子技術硏究誌 Vol.22 No.1
Polysilicon thin film transistor (Poly-Si TFT's) have been actively studied due to their applications in active matrix liquid crystal displays. For such applications, the leakage current has to be in the range of sub picoampere. In this paper leakage current of drain-offset polysilicon thin film transistor (poly-Si TFT's) with different offset length was studied. A new conduction model based on the thermionic generation of the field emitted electrons was developed to identify the leakage mechanism. It was found that the effective grain sire of the drain-offset region is important factor in the leakage current. A good agreement between experimental and simulated results of the leakage current is obtained.
김기완,배승춘,박성근 한국센서학회 1997 센서학회지 Vol.6 No.6
We fabricated the ceramic PLT tablet which was composed of 5, 10 and 15 mold lanthanum concentration and thin film PLT to develope pyroelectric materials, and investigated their characteristics. Using TG/DTA, we determined calcination and sintering temperature to sinter the PLT completely and to prevent volatilization of the Pb components. The calcination and sintering temperature were 850℃, 1150℃ respectively, end there was a lot of mass loss at higer sintering temperature. By measuring temperature-dielectric constant characteristics of ceramic tablet we investigated dielectric constant characteristics depends on La concentration. The Curie point of PLT with 5, 10 and 15 mol% lanthanum concentration were 330℃, 269℃ and 210℃ respectively. Using PLT cerarnie tablet we observed IR detection characteristics, and then deposited PLT thin film by rf magnetron sputtering. We verified that PLT thin film fabricated with completely sintered PLT target had the same structure to target by investigating lattice constant and optical transparency.
김기완,마대영,이우일,최시영 경북대학교 전자기술연구소 1982 電子技術硏究誌 Vol.3 No.1
CdSe T.F.T. has been fabricated using RF sputtering. The change of V_G at constant G_DS has been measured for 5 minutes. And trapped charge density(N_S/q) (△V_G/V_(step)) was calculated at about 10^(14)V^(-1)㎝^(-2). It was affected by the purity of the gas during the deposition. The annealing effect was not shown below 400℃. The aging effect of CdSe(MIS) capacitor fabricated by thermal evaporation has been observed. The change of capacitance at constant voltage has been measured for 5 minutes. A little annealing effect was found.
컬러센서를 위한 TiO₂/Se:Te 이종접합의 스펙트럼 응답
김기완,박욱동,우정욱,이우일 한국센서학회 1993 센서학회지 Vol.2 No.1
TiOz/Se : Te heterojunction for color sensor has been fabricated by RF reactive sputtering and thermal evaporation methods onto glass substrate. The optimum deposition condition of TiO₂ films was such that RF power was 120 W, substrate temperature was 100℃, oxygen concentration was 50%, working pressure was 50 mTorr for the TiO₂ film thickness of 1000Å. In this case, the optical transmittance of TiO₂ film at 550 nm-wavelength was 85 %, resistivity was 2 X 10⁹ Ω·cm, refractive index was 2. 3, and optical bandgap was 3. 58 eV. The composition ratio of 0 to Ti by AES analysis was 1.7. When TiO₂ films were annealed at 400℃ for 30 min. in O₂ ambient, the optical transmittance of TiO₂ films at the wavelength range of 300∼580 nm was improved from 0 to 25 %. When Se : Te films were annealed at 190℃ for 1 min, photosensitivity under illumination of 1000 lux was 0.75. The optical bandgap of Se : Te films was 1.7 eV. The structures of Se : Te films were the hexagonal with (100) and (110) orientation. The spectral response of a-Se was improved by the addition of Te, especially in the long wavelength region. The TiO₂/Se : Te heterojunction showed wide spectral response. and more improved one than that of a-Si film in the blue light region.