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김병국,김종숭 한국고무학회 1983 엘라스토머 및 콤포지트 Vol.18 No.1
The purpose of this study is to apply in various fields of products economically and practically using the characteristic of ash of holed briquette coal in maximum. According to the test results, the cure rate of ash of holed briquette coal is comparatively late. But it has shown nearly same level of physical properities compared with other fillers except hard clay and grey carbon.
산소플라즈마 전처리된 Polyethylene Naphthalate 기판 위에 증착된 ZnO:Ga 투명전도막의 특성
김병국,김정연,오병진,임동건,박재환,우덕현,권순용,Kim, Byeong-Guk,Kim, Jeong-Yeon,Oh, Byoung-Jin,Lim, Dong-Gun,Park, Jae-Hwan,Woo, Duck-Hyun,Kweon, Soon-Yong 한국재료학회 2010 한국재료학회지 Vol.20 No.4
Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.