RuO₂-Glass 복합계의 임피던스특성에 미치는 Glass 조성의 영향

박상보,구본급 大田工業大學 1991 한밭대학교 논문집 Vol.8 No.2

As funtion of the glass composition and reaction temperature, the complex impedance properties and the electrical conduction mechanisms were investigated in the RuO_2-glass composites. The amount of Ru impurity in glass matrix increased with decreasing the glass softening point and incresing the reaction temperature. For the RuO_2-high softening point (530˚C ) glass composite, the complex impedance shows a vertical line on the R`axis, which indicates that the ionic conduction. In the case of the RuO_2-medium softening point (445˚C) glass composites, the complex impedance spectra changed from a vertical line on the R axis to a semicircle arc corresponding to the hopping conduction with increasing the reaction temperature. However, in the RuO_2-low softening point glass composites, the complex imprdance spectra changed from a semicircle are to nearly one point on the R axis corresponding to metallic like conduction.

AlN 기판의 표면조도 및 소결온도가 Ag 후막도체의 접착강도에 미치는 영향

구본급 한국결정성장학회 2020 한국결정성장학회지 Vol.30 No.3

The effect of substrate surface roughness and sintering temperature on the adhesion strength of Ag-based thick film conductors formed on AlN substrates with excellent thermal conductivity was studied. The adhesion strength of the thick-film conductor manufactured using an AlN substrate having a surface roughness (Ra) of 0.5 was higher than that of a thick-film conductor manufactured using a substrate having a surface roughness greater or smaller than this. In the case of a substrate with a surface roughness of less than 0.5, the contact area between the Ag thick film conductor and the substrate was relatively smaller than that of a substrate with a surface roughness of 0.5, resulting in a lower adhesive strength. On the other hand, when a substrate having a surface roughness of more than 0.5 was used, it was found that the conduct or film was not completely adhered to the substrate, and as a result, it was found that the adhesive strength was small. In addition, it was found that the surface smoothness of the Ag-based thick film conductor film obtained by sintering at 850°C was the best compared to the smoothness of the conductor film obtained by sintering at different sintering temperatures,and as a result, it was found that the adhesive strength of the conductor film was the highest. 열전도성이 우수한 AlN 기판에 형성되는 Ag계 후막도체의 접착강도에 미치는 기판 표면조도 및 소결 온도의영향을 연구하였다. 표면조도(Ra)가 0.5인 AlN 기판을 사용하여 제조한 후막도체의 접착강도가 이보다 표면조도가 크거나또는 작은 기판을 사용하여 제조한 후막도체의 경우보다 높게 나타났다. 표면조도가 0.5보다 작은 기판의 경우 Ag 후막도체와 기판 사이의 접촉면적이 표면조도가 0.5인 기판보다 상대적으로 작아 접착강도가 작게 나타났다. 한편, 표면조도가0.5보다 큰 기판을 사용한 경우에는 도체막이 기판에 완전히 접착되지 못하는 현상이 나타났고, 이로 인해서 접착강도가적게 나타남을 알 수 있었다. 또한, 850°C에서 소결하여 얻어진 Ag계 후막도체 막의 표면 평활도가 다른 소결 온도에서소결하여 얻어진 도체막의 평활도에 비해 가장 우수하였고, 이로 인해 도체막의 접착강도가 가장 높게 나타남을 알 수 있었다.

경량기포콘크리트(ALC)의 기공형상변화에 미치는 암면의 영향

구본급,손대성 한밭대학교 산업과학기술연구소 1994 논문집 Vol.2 No.-

As the purpose of making of ceiling materials, the effect of rock wool on pore shape transition of autoclaved light weight concrete(ALC) was investigated with rock wool contents. As increasing the rock wool contents, the compressive strength and specific gravity decreased, and the pore size of ALC increased and pore shape transferred from a circle to an ellipse.

인쇄 및 소결조건이 AlN 기판용 후막저항체의 특성에 미치는 영향

구본급,Koo, Bon Keup 한국세라믹학회 2014 한국세라믹학회지 Vol.51 No.4

$RuO_2$-based high frequency thick-film resistor paste was printed at the speed of 10, 100, 300 mm/sec on the AlN substrate, and then sintered at between 750 and $900^{\circ}C$. The sintered thick films were characterized in terms of printing and sintering conditions. With increasing printing speed, the thickness and roughness of sintered film increased. The resistance of the thick film resistor was reduced by increasing the printing speed from 10 to 100 mm/sec, but did not significantly change at 300 mm/sec speed. With increasing sintering temperature, the surface roughness and thickness of sintered resistor film decreased. The reduction rate was large in case of fast printed resistor. The resistance of the resistor increased up to $800^{\circ}C$ with sintering temperature, but again decreased at the higher sintering temperature.

혼성집적회로용 후막저항체의 전기전도기구

구본급 大田産業大學校 1994 한밭대학교 논문집 Vol.11 No.0101

Elctrical conduction mechanisms of thick film resistors for HIC were investigated by frequency dependance on AC conductivity. Electrical conduction mechanisms of lower resistivity system(100Ω/sq.) sintered at 600-900℃ were all metallic-like conduction mechanism. In case of higher resistivity(10KΩ/sq.) system, the electrical conductions were very dependent on sintering temperature. When sintering temperature was 600℃, the electrical conduction mechanism was ionic, and as increasing the sintering temperature, the electrical conduction mechanism changed from ionic to hopping conduction mechanism.

저온 동시 소성용 후막 NTC 서미스터의 전기적 특성에 미치는 무연계 프릿트 및 RuO₂의 영향

구본급,Koo, Bon Keup 한국결정성장학회 2021 한국결정성장학회지 Vol.31 No.5

저온 동시 소성용 후막 NTC 서미스터를 Mn_1.5Ni_0.4Co_0.9Cu_0.4O₄ 조성의 NTC 분말과 lead free frit 및 RuO₂를 이용하여 제조한 페이스트를 96 % 알루미나 기판 위에 인쇄와 소결을 통해 제조한 후, 이 후막 NTC의 전기적 특성에 미치는 프릿트 및 RuO₂의 영향을 연구하였다. 후막 NTC 서미스터의 저항은 동일한 온도에서 소결한 벌크 상에 비해 높게 나타났으나 저항-온도 특성에서 부 저항 온도 특성은 더 명확하게 직선적으로 나타남을 알 수 있었다. 한편, 소결온도 증가에 따라 면적저항은 감소하였고 프릿트 첨가량이 많을수록 면적저항은 높게 나타났다. 후막 NTC 서미스터의 B 정수는 3000 K 이상의 값 나타냈는데 그 중 프릿트를 5 wt% 첨가한 페이스트로 만든 후막 NTC를 900℃에서 소결한 시편의 B 정수가 가장 높게 나타남을 알 수 있었다. 또한, RuO₂ 첨가에 따라 면적저항의 감소가 나타남을 알 수 있었으며 RuO₂를 5 wt% 첨가한 페이스트를 900℃에서 소결한 후막 NTC 서미스터의 면적저항 감소의 변화가 가장 뚜렷이 나타남을 알 수 있었다. A thick film NTC thermistor for low temperature co-firing was manufactured by printing and sintering a paste prepared using NTC powder of Mn_1.5Ni_0.4Co_0.9Cu_0.4O₄ composition, lead free frit, and RuO₂ on a 96 % alumina substrate. The effect of frit and RuO₂ on the electrical properties of thick film NTC thermistor was studied. The resistance of the thick film NTC thermistor was higher than that of the bulk phase sintered at the same temperature, but it was found that the negative resistance temperature characteristic appeared more clearly and linearly in the resistance - temperature characteristic. On the other hand, the area resistance decreased as the sintering temperature increased, and the area resistance increased as the amount of frit added increased. The B constant of the thick film NTC thermistor was 3000 K or higher. Among them, it was found that the B constant of the thick film NTC thermistor made of paste with 5 wt% of frit added and sintered at 900℃ showed the highest B constant. Also, it can be seen that the area resistance decreased with the addition of RuO₂, and the change in the area resistance decrease of the thick film NTC thermistor obtained by sintering the paste containing 5 wt% of RuO₂ at 900℃ is the most obvious.

Ag계 도체 및 RuO₂계 저항체 페이스트의 특성에 미치는 무연계 글라스 프릿트 조성의 영향

구본급 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3

The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without Bi₂O₃) and HBF-B(with Bi₂O₃) were made from SiO₂, B₂O₃, Al₂O₃, CaO, MgO, Na₂O, K₂O, ZnO, MnO, ZrO₂, Bi₂O₃. And Ag based conductor pastes and RuO₂based resistor paste were prepared by mixed with these frits and functional phase(Ag and RuO₂), and organic vehicle. The properties of thick film conductor and resistor sintered at 850℃ were studied after printing on Al₂O₃substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix. 무연계 후막도체 및 저항체 페이스트 제조를 위한 연구로 무연계 프릿트의 조성이 막의 특성에 미치는 영향을 연구하였다. SiO₂, B₂O₃, Al₂O₃, CaO, MgO, Na₂O, K₂O, ZnO, MnO, ZrO₂, Bi₂O₃를 이용하여 Bi₂O₃를 첨가하지 않은 HBF-A와 Bi₂O₃를 첨가한 HBF-B 두 종류의 무연계 프릿트를 제조하였는데 Bi₂O₃를 첨가한 프릿트를 유동특성이 우수하였다. 한편 이 두 종류의 프릿트르 이용하여 Ag계 도체 페이스트와 RuO₂계 저항체를 제조하여 알루미나 기판에 인쇄한 후 최고온도가 850℃인 벨트로에서 10분간 소결하여 얻은 막의 전기적특성을 연구하였다. 도체페이스트의 경우 Bi₂O₃를 첨가한 HBF-B를 이용한 페이스트의 막의 전기적특성 및 부착특성이 우수하였고, 저항체의 경우에도 프릿트의 조성에 Bi₂O₃와 같이 유동성과 반응성을 높이는 성분이 존재하면 도전 성분이 프릿트 내로 잘 확산되어 저항막의 저항을 낮게 만들므로 동일한 양이 RuO₂가 첨가된 유동성이 적은 프릿트를 사용한 저항체보다 저항이 더 낮게 나타냄을 알 수 있었다.

Sheet형 PTC 서미스터의 제조 및 물성

구본급,강병돈,정진기,김호기 한국마이크로전자및패키징학회 1995 하이브리드마이크로일렉트로닉스 Vol.2 No.2

In this paper, the sheet type PTCR thermistors based on BaTiO₃fabricated by tape casting method were investigated with electrical properties and microstructures. The composition of PTCR wis 89.9 BaTiO₃-0.1Sb₂O₃-10 CaTiO₃-0.05Mr₄O₂by mole percent. And organic system of slurry of were PVB, DBP, ethanol, toluene and fish oil. The sheet were sintered at 1325℃ and 1350℃ for 1hr. The characterization of the sintered sheet type specimen were conducted with SEM. resistance and impedance.

Ag-Glass계 후막도체에서 Ag 입자성장기구

구본급 大田産業大學校 1995 한밭대학교 논문집 Vol.12 No.0202

As a functions glass content and reaction conditions, the silver grain growth mechanism of Ag-bismuth-lead-borosilicate glass system thick film conductors were investigated. Grain growth mechanism of Ag varied with glass contents. When gless content was 2 wt.%, the grain growth mechanism of the silver was normal grain growth of solid state sintering. But in case of above 5 wt% glass in thick film conductor, silver grain growth mechanism was diffusion controlled Ostwald ripening of liquid phase sintering.

Ag계 도체 및 RuO₂계 저항체 페이스트의 특성에 미치는 무연계 글라스 프릿트 조성의 영향

구본급,Koo, Bon-Keup 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.3

Abstract: The effect of lead free glass frit compositions on the properties of thick film conductor and resistor pastes were investigated. Two types lead free frits, HBF-A(without $Bi_2O_3$) and HBF-B(with $Bi_2O_3$) were made from $SiO_2$, $B_2O_3$, $Al_2O_3$, CaO, MgO, $Na_2O$, $K_2O$, ZnO, MnO, $ZrO_2$, $Bi_2O_3$. And Ag based conductor pastes and $RuO_2$ based resistor paste were prepared by mixed with these frits and functional phase(Ag and $RuO_2$), and organic vehicle. The properties of thick film conductor and resistor sintered at $850^{\circ}C$ were studied after printing on $Al_2O_3$ substrate. The morphology of the sintered films surface were SEM and EDS were carried out to analysis the chemical composition on resistor surface and state of Ru atom in frit matrix.