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Acid Leaching of Indium-gallium-zinc-oxide Scrap
( Chinmayee Mishra ),( Basudev Swain ),( Kyung-soo Park ),( Lee Seung Kang ),( Chan Gi Lee ),( Jeung-jin Park ) 한국폐기물자원순환학회(구 한국폐기물학회) 2014 한국폐기물자원순환학회 심포지움 Vol.2014 No.1
Leaching mechanism of indium-gallium-zinc-oxide (IGZO) scrap is important not only to understand selective or complete leaching of metal values but also to develop a techno-economical-environment friendly recycling process for IGZO scrap. Recovery of gallium, indium and total recycling of IGZO is possible by leaching followed by solvent extraction in a hydrometallurgical route. The IGZO scrap was characterized by XRF, XRD and ICP analysis followed by aqua-regia digestion. To recover pure gallium and indium, leaching behavior of IGZO has been studied. Leaching efficiencies of various mineral acids like HCl, H<sub>2</sub>SO<sub>4</sub> and HNO<sub>3</sub> were studied. Different experimental parameters such as acid concentration, pulp density, temperature, leaching time and stirring speed are currently being investigated. Our initial investigation suggest that the concentration of metal content follows In > Zn > Ga order.
Swain, Basudev,Mishra, Chinmayee,Hong, Hyun Seon,Cho, Sung-Soo The Royal Society of Chemistry 2015 GREEN CHEMISTRY Vol.17 No.8
<▼1><P>A sustainable commercial green process for treatment and recovery of ITO etching wastewater by liquid–liquid extraction and wet chemical reduction.</P></▼1><▼2><P>A laboratory scale sustainable commercial green process for treatment of indium-tin-oxide (ITO) etching wastewater and total recovery of In, Mo, Sn and Cu by combination of liquid–liquid extraction and wet chemical reduction has been developed. The ITO etching wastewater is a threat to the ecosystem and human health, containing significant amounts of valuable metals like In and Cu. Metals and 100 nm Cu nanopowder with 5N purity have been recovered. The developed process concurrently treats the ITO etching wastewater and recovers pure metals. By this process, Mo and Sn are recovered by liquid–liquid extraction, and In is recovered through liquid–liquid extraction followed by wet chemical reduction. Value added semiconductor industry grade Cu nanopowder is recovered through wet chemical reduction using ascorbic acid. After a series of treatments, the wastewater is free of pollutants, worthy of use in the same industry or can be disposed of. The process is a sustainable, green, versatile and flexible process.</P></▼2>
Swain, Basudev,Mishra, Chinmayee,Kang, Leeseung,Park, Kyung-Soo,Lee, Chan Gi,Hong, Hyun Seon,Park, Jeung-Jin Elsevier 2015 Journal of Power Sources Vol.281 No.-
<P><B>Abstract</B></P> <P>Recovery of metal values from GaN, a metal-organic chemical vapor deposition (MOCVD) waste of GaN based power device and LED industry is investigated by acidic leaching. Leaching kinetics of gallium rich MOCVD waste is studied and the process is optimized. The gallium rich waste MOCVD dust is characterized by XRD and ICP-AES analysis followed by aqua regia digestion. Different mineral acids are used to find out the best lixiviant for selective leaching of the gallium and indium. Concentrated HCl is relatively better lixiviant having reasonably faster kinetic and better leaching efficiency. Various leaching process parameters like effect of acidity, pulp density, temperature and concentration of catalyst on the leaching efficiency of gallium and indium are investigated. Reasonably, 4 M HCl, a pulp density of 50 g/L, 100 °C and stirring rate of 400 rpm are the effective optimum condition for quantitative leaching of gallium and indium.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Recycling of GaN a MOCVD waste of LED industry is investigated. </LI> <LI> Addresses waste of GaN based power device industry and environmental directives. </LI> <LI> A leaching process has been optimized and leaching kinetics is investigated. </LI> <LI> A techno-economical feasible, environment friendly and occupational safe process. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>