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Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells
Park, Kwang Wook,Kang, Seok Jin,Ravindran, Sooraj,Min, Jung Wook,Lee, Soo Kyung,Park, Min Su,Lee, Yong Tak JAPAN SOCIETY OF APPLIED PHYSICS 2015 Applied physics express Vol.8 No.6
<P>GaAs tunnel diodes (TDs) embedded with an InAs quantum dot (QD) layer were grown and their performance was compared with that of TDs without a QD layer. The TDs embedded with a QD layer showed enhanced peak tunnel current density and lower differential resistivity at zero bias compared with the TDs without a QD layer. The samples were then annealed to mimic the overlayer growth process. It was found that the performance degradation after annealing was smaller for the QD-layer-embedded TDs. The improved characteristics of the QD-layer-embedded GaAs TDs make them advantageous for interconnecting unit cells in tandem solar cells. (C) 2015 The Japan Society of Applied Physics</P>
Park, Hyun-Woo,Song, AeRan,Kwon, Sera,Du Ahn, Byung,Chung, Kwun-Bum JAPAN SOCIETY OF APPLIED PHYSICS 2016 Applied physics express Vol.9 No.11
<P>W-doped InZnO (WIZO) thin-film transistors (TFTs) were fabricated by co-sputtering with different W doping concentrations. We varied the W doping concentration to change the device performance and stability of the WIZO TFTs. WIZO TFTs with a W doping concentration of similar to 1.1% showed the lowest threshold voltage shift and hysteresis. We correlated the device characteristics with the evolution of the electronic structure, such as band alignment, chemical bonding states, and band edge states. As the W doping concentration increased, the oxygen-deficient bonding states and W suboxidation states decreased, while the conduction-band offset and the incorporation of the WOx electronic structure into the conduction band increased. (C) 2016 The Japan Society of Applied Physics</P>
Origin of threshold current density for asymmetric magnetoresistance in Pt/Py bilayers
Li, Tian,Kim, Sanghoon,Lee, Seung-Jae,Lee, Seo-Won,Koyama, Tomohiro,Chiba, Daichi,Moriyama, Takahiro,Lee, Kyung-Jin,Kim, Kab-Jin,Ono, Teruo JAPAN SOCIETY OF APPLIED PHYSICS 2017 Applied physics express Vol.10 No.7
<P>The asymmetric magnetoresistance (MR) in Py/Pt bilayers is investigated. It increases linearly with respect to the current density up to a threshold and increases more rapidly above this threshold. To reveal the origin of the threshold behavior, we investigate the magnetic field dependence of the asymmetric MR. It is found that the magnetic field strongly suppresses the asymmetric MR only above the threshold current density. Micromagnetic simulation reveals that the reduction of magnetization due to the spin-torque oscillation can be the origin of the threshold behavior of the asymmetric MR. (C) 2017 The Japan Society of Applied Physics</P>
Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach
Im, Ki-Sik,Sindhuri, Vodapally,Jo, Young-Woo,Son, Dong-Hyeok,Lee, Jae-Hoon,Cristoloveanu, Sorin,Lee, Jung-Hee JAPAN SOCIETY OF APPLIED PHYSICS 2015 Applied physics express Vol.8 No.6
<P>An AlGaN/GaN-based Omega-shaped nanowire fin-shaped FET (FinFET) with a fin width of 50 nm was fabricated using tetramethylammonium hydroxide (TMAH)-based lateral wet etching. An atomic layer deposited (ALD) HfO2 side-wall layer served as the etching mask. ALD Al2O3 and TiN layers were used as the gate dielectric and gate metal, respectively. The Omega-shaped gate structure fully depletes the active fin body and almost completely separates the depleted fin from the underlying thick GaN buffer layer, resulting in superior device performance. The top-down processing proposed in this work provides a viable pathway towards gate-all-around devices for III-nitride semiconductors. (C) 2015 The Japan Society of Applied Physics</P>
Han, Dong-Pyo,Shim, Jong-In,Shin, Dong-Soo JAPAN SOCIETY OF APPLIED PHYSICS 2017 Applied physics express Vol.10 No.5
<P>In this work, we investigate the carrier recombination dynamics in InGaN-based blue LED devices by analyzing the radiative and nonradiative carrier lifetimes as functions of driving current. To separate the radiative and nonradiative carrier lifetimes, we utilize the information on the internal quantum efficiency (IQE) and differential carrier lifetime. For comparative analysis, the characteristics of the IQE and electroluminescence spectrum are also used. Through measurements and analyses, we demonstrate that the saturation of the radiative recombination rate induced by the phase-space filling in the active volume triggers the increase in nonradiative recombination rate, thus leading to the efficiency droop. (C) 2017 The Japan Society of Applied Physics</P>
Whang, Hyun-Seok,Choe, Sug-Bong JAPAN SOCIETY OF APPLIED PHYSICS 2018 Applied physics express Vol.11 No.4
<P>Here, we present an analytic formula for the domain-wall depinning current from artificial triangular notches driven by the spin-orbit torque combined with the Dzyaloshinskii-Moriya interaction. Interestingly, in contrast to the magnetic-field-driven depinning, the depinning current is governed solely by the notch slope angle, irrespective of the notch depth and wire width. An analytic formula is proposed to explain the present observation on the basis of the variational principle for minimum energy states. The validity of the formula is verified via micromagnetic simulation, confirming the detailed effects of the spin-orbit torque and Dzyaloshinskii-Moriya interaction strengths. (C) 2018 The Japan Society of Applied Physics</P>
Comparison of writing methods of single memory cell with volatile and nonvolatile memory functions
Kim, Hyungjin,Baek, Myung-Hyun,Hwang, Sungmin,Lee, Jong-Ho,Park, Byung-Gook JAPAN SOCIETY OF APPLIED PHYSICS 2017 Applied physics express Vol.10 No.6
<P>A single memory cell having both volatile memory (VM) and nonvolatile memory (NVM) functions with an independent asymmetric dual-gate structure is reported, as well as its programming methods. In the case of operating the device as a VM cell, a higher sensing margin is obtained, and an undesirable soft-programming issue is suppressed when a gate-induced drain leakage programming method is used. Additionally, the sensing margin and hold retention time of the VM operation are improved in a programmed state of the NVM function. These results indicate that the proposed device has potential for high-density embedded-memory applications. (C) 2017 The Japan Society of Applied Physics</P>
Colored and semitransparent silver nanoparticle layers deposited by spin coating of silver nanoink
Yoon, Hoi Jin,Jo, Yejin,Jeong, Sunho,Lim, Jung Wook,Lee, Seung-Yun JAPAN SOCIETY OF APPLIED PHYSICS 2018 Applied physics express Vol.11 No.5
<P>In this letter, we report on the fabrication and characterization of colored and semitransparent silver nanoparticle layers. A spin coating of silver nanoink is used to deposit silver nanoparticle layers onto substrates. The transmittance and color of the silver nanoparticle layers are significantly dependent on the spin speed and nanoink concentration, owing to variations in the size and distribution of the nanoparticles. Both color variation and efficiency improvement are achieved with the application of silver nanoparticles to semitransparent Si thin-film solar cells, which is associated with the excitation of the dipole or quadruple plasmon modes of the silver nanoparticles. (C) 2018 The Japan Society of Applied Physics</P>
Suzuki, Motohiro,Kim, Kab-Jin,Kim, Sanghoon,Yoshikawa, Hiroki,Tono, Takayuki,Yamada, Kihiro T.,Taniguchi, Takuya,Mizuno, Hayato,Oda, Kent,Ishibashi, Mio JAPAN SOCIETY OF APPLIED PHYSICS 2018 Applied physics express Vol.11 No.3
<P>An X-ray tomographic technique was developed to investigate the internal magnetic domain structure in a micrometer-sized ferromagnetic sample. The technique is based on a scanning hard X-ray nanoprobe using X-ray magnetic circular dichroism (XMCD). From transmission XMCD images at the Gd L-3 edge as a function of the sample rotation angle, the three-dimensional (3D) distribution of a single component of the magnetic vector in a GdFeCo microdisc was reconstructed with a spatial resolution of 360 nm, using a modified algebraic reconstruction algorithm. The method is applicable to practical magnetic materials and can be extended to 3D visualization of the magnetic domain formation process under external magnetic fields. (C) 2018 The Japan Society of Applied Physics</P>
Takahashi, Hidetoshi,Shimoyama, Isao,Heo, Yun Jung JAPAN SOCIETY OF APPLIED PHYSICS 2018 Applied physics express Vol.11 No.6
<P>This paper presents a simple, low-cost, long-lasting UV-LED-based light source with uniform light intensity using a checkerboard half-mirror positioned within inverse L-shaped UV-LED arrays. The light rays from the top UV-LED array passed through the transparent portions of the checkerboard half-mirror, while the light rays from the side UV-LED array were reflected on the remaining opaque portions at right angles. Thus, uniform light intensity was achieved on the bottom area. Using the developed UV-LED light source, we fabricated microstructures with uniform shapes on a large area, thereby showing feasible applications for MEMS fabrication. (C) 2018 The Japan Society of Applied Physics</P>