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Jinkwon Kim,Junsik Mun,Youngdo Kim,Bongju Kim,Jeong Rae Kim,Lingfei Wang,Miyoung Kim,Changyoung Kim,Jason W. A. Robinson,Yoshiteru Maeno,Tae Won Noh 한국자기학회 2021 한국자기학회 학술연구발표회 논문개요집 Vol.31 No.2
Ruddlesden-Popper (RP) phase oxides (An+1BnO3n+1, n = 1, 2, ...) have been spotlighted with versatile physical properties such as high-temperature superconductivity, colossal magnetoresistance. These emergent phenomena provide a platform for novel oxide-based electronic devices including spintronics application. However, high-quality RP-phase thin film growth has been disturbed by extended structural defects, such as out-of-phase boundaries (OPBs). OPB is a translational boundary between neighboring unit cells, shifted in a specific crystallographic direction. For instance, if RP-phase thin films grown on ABO₃ perovskite substrates, the structural mismatch between film and substrates induces a crystallographic shift in the c-axis direction, thus OPBs form at the film-substrate interface. Since OPB formation hampers the physical properties of RP-phase thin films, the suppression of the structural defects is highly required to carry out the high-performance RP-phase based functional devices. In this study, we suppressed OPB suppression in RP-phase oxide thin films by atomic-scale interface engineering. As model systems, the unconventional superconductor Sr₂RuO₄ (bulk Tc ~ 1.5 K) and La2-xSrxCuO₄ (bulk Tc ~ 39 K) thin films were employed. Despite the structural similarities between films and substrates, Sr2RuO4 and La2-xSrxCuO₄ films exhibited huge OPB formations. By controlling the atomic-scale interface engineering, the OPBs were significantly suppressed in the film structure. Notably, these OPB-free Sr₂RuO₄ and La2-xSrxCuO₄ thin films exhibited highly enhanced superconductivity than the film with huge OPB formation. Our study suggests a comprehensive method to suppress OPB formation in RP thin films, enabling superconducting spintronics devices based on the unconventional superconductivity.