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- 저자 : Xinling Tang (검색결과 3 건)
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Junfeng Gong,Xinle Huang,Liwen Luo,Huan Liu,Hao Wu,Ying Tan,Changqing Li,Yu Tang,Yue Zhou 대한척추신경외과학회 2022 Neurospine Vol.19 No.2
Objective: Endoscopic transforaminal lumbar interbody fusion (Endo-TLIF) has gained increasing popularity among spine surgeons. However, with the use of fluoroscopy, intraoperative radiation exposure remains a major concern. Here, we aim to introduce Endo-TLIF assisted by O-arm-based navigation and compare the results between O-arm navigation and fluoroscopy groups. Methods: Sixty-four patients were retrospectively analyzed from May 2019 to September 2020; the nonnavigation group comprised 34 patients, and the navigation group comprised 30 patients. Data on radiation dose, blood loss, postoperative drains, surgery time, complications, and length of hospital stay (LOS) were collected. Clinical outcomes were evaluated from postoperative data such as fusion rate, Oswestry Disability Index (ODI), and visual analogue scale (VAS). Radiation dose and surgery time were selected as primary outcomes; the others were second outcomes. Results: All patients were followed up for at least 12 months. No significant differences were detected in intraoperative hemorrhage, postoperative drains, hospital LOS, or complications between the 2 groups. The radiation dose was significantly lower in the navigation group compared with the nonnavigation group. The time of cannula placement and pedicle screw fixation was significantly reduced in the navigation group. No significant differences were detected between the clinical outcomes in the 2 groups (VAS and ODI scores). Conclusion: The present study demonstrates that O-arm-assisted Endo-TLIF is efficient and safe. Compared with fluoroscopy, O-arm navigation could reduce the radiation exposure and surgical time in Endo-TLIF surgery, with similar clinical outcomes. However, the higher doses exposed to patients remains a negative effect of this technology.
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Dynamic performance of 6.5 kV SiC MOSFET body diodes and anti‑parallel Schottky barrier diodes
Yujie Du,Xinling Tang,Xiaoguang Wei,Shuai Sun,Fei Yang,Zhibin Zhao 전력전자학회 2023 JOURNAL OF POWER ELECTRONICS Vol.23 No.6
For a silicon carbide (SiC) metal–oxide–semiconductor fi eld-eff ect transistor (MOSFET), both the body diode of the MOSFET and an anti-parallel diode can function as a freewheeling diode that carries reverse current. Selecting a suitable freewheeling method is particularly important to fully exploit the performance of high-voltage SiC MOSFET devices. In this study, based on the 6.5 kV SiC MOSFET and the Schottky barrier diode (SBD) developed by our research group, the dynamic characteristics of the MOSFET body diode, the SBD, and the parallel connection of the two are investigated. In addition, the influence of capacitive current on the dynamic characteristics is analyzed by establishing an equivalent circuit model. Test results show that when compared with the body diode, the SBD has an extremely low reverse recovery current, a lower capacitive current, and better reverse recovery temperature stability. Thus, the SBD is regarded as the most suitable freewheeling diode for the 6.5 kV SiC MOSFET. Finally, a package solution for the 6.5 kV SiC MOSFET and SBD is proposed.
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Calculation and analysis of switching losses in IGBT devices based on switching transient processes
Hao, Bin,Peng, Cheng,Tang, Xinling,Zhao, Zhibin The Korean Institute of Power Electronics 2022 JOURNAL OF POWER ELECTRONICS Vol.22 No.10
Accurately revealing the generation mechanism and the mathematical relationship with system parameters of the power loss in the switching transients of high-voltage large power IGBT devices is very important for the device selection and circuit design of converter equipment. To reveal the mechanism of generating switching losses, this paper analyzes the switching transient processes of the IGBT devices in the basic commutation circuit in detail. Then this paper proposes an accurate calculation method based on a finite state machine (FSM) for the switching losses of IGBT devices, and verifies the correctness of this method. To further reveal the mathematical relationships among switching losses, device parameters, and loop parameters, approximate analytical formulas for the switching loss of different switching transient processes are mathematically derived, which can provide a theoretical basis for reducing the switching losses in converters.
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