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- 저자 : Sugime, Hisashi (검색결과 1 건)
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Akiba, Sachie,Kosaka, Masaki,Ohashi, Kei,Hasegawa, Kei,Sugime, Hisashi,Noda, Suguru Elsevier 2019 THIN SOLID FILMS - Vol.675 No.-
<P><B>Abstract</B></P> <P>Direct formation of graphene films on dielectric substrates is investigated by the “etching-precipitation” method which converts metal-carbon mixed films to graphene films by etching metal away by Cl<SUB>2</SUB> at 600–650 °C. Here we report a new approach for improved control of the layer number and continuity of the graphene films. Reactive sputtering of Fe in C<SUB>2</SUB>H<SUB>4</SUB>/Ar enabled fine control of the carbon concentrations and thicknesses of the initial Fe-C films, which yielded continuous multilayer graphene films of controllable average layer numbers of ~10–40, low resistivity down to ~240 μΩ cm, and high Raman G-band to D-band intensity ratio up to 16 directly on SiO<SUB>2</SUB> substrates. We also show that the carbon concentration of the initial Fe-C films determines the film continuity and crystallinity of the graphene.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Continuous films of multilayer graphene are formed directly on SiO<SUB>2</SUB>. </LI> <LI> Average layer number is controlled for a wide range of ~10–40. </LI> <LI> Raman G-band to D-band intensity ratio up to 16 shows the high graphene quality. </LI> <LI> Such films are obtained by removing Fe from Fe-C films using Cl<SUB>2</SUB> at 600–650 °C. </LI> </UL> </P>
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