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Casper Hyttel Clausen,Maria Dimaki,Sonia Buckley,Winnie Edith Svendsen 한국바이오칩학회 2011 BioChip Journal Vol.5 No.1
An investigation of the dielectric properties of polyamine buffer prepared human chromo-somes is presented in this paper. Chromosomes prepared in this buffer are only a few micrometers in size and shaped roughly like spherical discs. Dielectropho-resis was therefore chosen as the method of manipulation combined with a custom designed microfluidic system containing the required electrodes for dielec-trophoresis experiments. Our results show that although this system is presently not able to distinguish between the different chromosomes, it can provide average data for the dielectric properties of human chromosomes in polyamine buffer. These can then be used to optimize system designs for further characterization and even sorting. The experimental data from the dielectrophoretic manipulation were combined with theoretical calculations to extract a range of values for the permittivity and conductivity of human poly-amine buffer prepared chromosomes.
Petykiewicz, Jan,Nam, Donguk,Sukhdeo, David S.,Gupta, Shashank,Buckley, Sonia,Piggott, Alexander Y.,Vuč,ković,, Jelena,Saraswat, Krishna C. American Chemical Society 2016 NANO LETTERS Vol.16 No.4
<P>A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000. By varying the dimensions of the germanium nanowire, we tune the emission wavelength over more than 400 nm with a single lithography step. We find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low-threshold germanium based lasers for on-chip optical interconnects.</P>