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Kim, Tae-Hyeon,Kim, Sungjun,Kim, Hyungjin,Kim, Min-Hwi,Bang, Suhyun,Cho, Seongjae,Park, Byung-Gook Elsevier 2018 Solid-State Electronics Vol.140 No.-
<P><B>Abstract</B></P> <P>In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WO<SUB>x</SUB>/p<SUP>+</SUP>-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WO<SUB>x</SUB>-based RRAM’s application to Si-based 1D (diode)–1R (RRAM) or 1T (transistor)–1R (RRAM) structure is demonstrated.</P>
Characterization of the Vertical Position of the Trapped Charge in Charge-trap Flash Memory
Kim, Seunghyun,Kwon, Dae Woong,Lee, Sang-Ho,Park, Sang-Ku,Kim, Youngmin,Kim, Hyungmin,Kim, Young Goan,Cho, Seongjae,Park, Byung-Gook The Institute of Electronics and Information Engin 2017 Journal of semiconductor technology and science Vol.17 No.2
In this paper, the characterization of the vertical position of trapped charges in the charge-trap flash (CTF) memory is performed in the novel CTF memory cell with gate-all-around structure using technology computer-aided design (TCAD) simulation. In the CTF memories, injected charges are not stored in the conductive poly-crystalline silicon layer in the trapping layer such as silicon nitride. Thus, a reliable technique for exactly locating the trapped charges is required for making up an accurate macro-models for CTF memory cells. When a programming operation is performed initially, the injected charges are trapped near the interface between tunneling oxide and trapping nitride layers. However, as the program voltage gets higher and a larger threshold voltage shift is resulted, additional charges are trapped near the blocking oxide interface. Intrinsic properties of nitride including trap density and effective capture cross-sectional area substantially affect the position of charge centroid. By exactly locating the charge centroid from the charge distribution in programmed cells under various operation conditions, the relation between charge centroid and program operation condition is closely investigated.
Design and Analysis of Sub-10 nm Junctionless Fin-Shaped Field-Effect Transistors
Kim, Sung Yoon,Seo, Jae Hwa,Yoon, Young Jun,Yoo, Gwan Min,Kim, Young Jae,Eun, Hye Rim,Kang, Hye Su,Kim, Jungjoon,Cho, Seongjae,Lee, Jung-Hee,Kang, In Man The Institute of Electronics and Information Engin 2014 Journal of semiconductor technology and science Vol.14 No.5
We design and analyze the n-channel junctionless fin-shaped field-effect transistor (JL FinFET) with 10-nm gate length and compare its performances with those of the conventional bulk-type fin-shaped FET (conventional bulk FinFET). A three-dimensional (3-D) device simulations were performed to optimize the device design parameters including the width ($W_{fin}$) and height ($H_{fin}$) of the fin as well as the channel doping concentration ($N_{ch}$). Based on the design optimization, the two devices were compared in terms of direct-current (DC) and radio-frequency (RF) characteristics. The results reveal that the JL FinFET has better subthreshold swing, and more effectively suppresses short-channel effects (SCEs) than the conventional bulk FinFET.
( Seongjae Kim ),( Hyeoung-eun Kim ),( Boyeon Kang ),( Youn-woo Lee ),( Hangeun Kim ),( Dae Kyun Chung ) 한국미생물생명공학회(구 한국산업미생물학회) 2017 Journal of microbiology and biotechnology Vol.27 No.10
Lipoteichoic acid (LTA), a cell wall component of gram-positive bacteria, is recognized by Toll-like receptor 2, expressed on certain mammalian cell surfaces, initiating signaling cascades that include nuclear factor kappa-light-chain-enhancer of activated B cells (NF-κB) and mitogen-activated protein kinase. There are many structural and functional varieties of LTA, which vary according to the different species of gram-positive bacteria that produce them. In this study, we examined whether LTA isolated from Staphylococcus aureus (aLTA) affects the expression of junction proteins in keratinocytes. In HaCaT cells, tight junctionrelated gene expression was not affected by aLTA, whereas adherens junction-related gene expression was modified. High doses of aLTA induced the phosphorylation of extracellular signal-regulated protein kinases 1 and 2, which in turn induced the epithelial-mesenchymal transition (EMT) of HaCaT cells. When cells were given a low dose of aLTA, however, NF-κB was activated and the total cell population increased. Taken together, our study suggests that LTA from S. aureus infections in the skin may contribute both to the outbreak of EMT-mediated carcinogenesis and to the genesis of wound healing in a dose-dependent manner.
Kim, Sung Yoon,Seo, Jae Hwa,Yoon, Young Jun,Kim, Jin Su,Cho, Seongjae,Lee, Jung-Hee,Kang, In Man The Korean Institute of Electrical Engineers 2015 Journal of Electrical Engineering & Technology Vol.10 No.3
Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.
Kim, Bok Hyeon,Son, Dong Hoon,Ju, Seongmin,Jeong, Chaehwan,Boo, Seongjae,Kim, Cheol Jin,Han, Won-Taek American Scientific Publishers 2006 Journal of Nanoscience and Nanotechnology Vol.6 No.11
<P>The effect of aluminum incorporation on silver metal quantum dots formation in the alumino-silicate glass film processed by sol-gel process was investigated. The sol-gel derived glass was coated onto the silica glass plate by spin coating with the mixture solution of tetraethyl orthosilicate (TEOS), C2H5OH, H2O, AgNO3, Al(NO3)3·9H2O, and HNO3 with the molar ratios of Ag/Si = 0.12 and Al/Si varying from 0 to 0.12. The formation of the silver metal quantum dots was confirmed by the measurements of the UV/VISoptical spectra, the X-ray diffraction patterns, and the transmission electron microscope images. While the radius of silver metal quantum dots increased with the increase of aluminum concentration, the concentration of the silver metal quantum dots decreased. The formation of the silver metal quantum dots was found strongly suppressed by incorporation of aluminum ions in the glass. The change in the glass structure due to the aluminum incorporation was investigated by the analysis of the Raman spectra. The silver ions in the glass contributed to form stable (Al:Ag)O4 tetrahedra by pairing with aluminum ions and thus clustering of silver metal quantum dots was hindered.</P>
Arch NAND Flash Memory Array With Improved Virtual Source/Drain Performance
Kim, Wandong,Lee, Jung Hoon,Yun, Jang-Gn,Cho, Seongjae,Li, Dong-Hua,Kim, Yoon,Kim, Doo-Hyun,Lee, Gil Sung,Park, Se-Hwan,Shim, Won Bo,Lee, Jong-Ho,Shin, Hyungcheol,Park, Byung-Gook IEEE 2010 IEEE electron device letters Vol.31 No.12
<P>In this letter, a novel SONOS NAND Flash memory array featuring arch-shaped silicon fin and extended word lines (WL) is proposed to improve virtual source/drain (VSD) performance. The arch shape concentrates electric field, resulting in higher electron concentration at the VSD region and higher on -state cell current. In addition, the extended WL process improves the short-channel-effect (SCE) immunity and <TEX>$I$</TEX>–<TEX>$V$ </TEX> characteristics. To verify these, an arch VSD NAND array device was fabricated and characterized. The integrated device shows very small SCE while obtaining high on-state cell current. Program and disturbance characteristics of the device are also confirmed.</P>