http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Park, Jinbong,Jeon, Yong-Deok,Kim, Hye-Lin,Lim, Hara,Jung, Yunu,Youn, Dong-Hyun,Jeong, Mi-Young,Kim, Hyun-Ju,Kim, Sung-Hoon,Kim, Su-Jin,Hong, Seung-Heon,Um, Jae-Young Hindawi Publishing Corporation 2013 Evidence-based Complementary and Alternative Medic Vol.2013 No.-
<P>Obesity has become a major health threat in developed countries. However, current medications for obesity are limited because of their adverse effects. Interest in natural products for the treatment of obesity is thus rapidly growing. Korean Medicine (KM) is characterized by the wide use of herbal formulas. However, the combination rule of herbal formulas in KM lacks experimental evidence. According to <I>Shennong's Classic of Materia Medica</I>, the earliest book of herbal medicine, <I>Veratrum nigrum</I> (VN) has antagonistic features against <I>Panax ginseng</I> (PG), and the PG-VN pair is strictly forbidden. In this study, we have shown the effects of PG, VN, and their combination on obesity in high-fat (HF) diet-induced obese mice and in 3T3-L1 cells. PG, VN, and PG-VN combination significantly reduced weight gain and the fat pad weight in HF diet-induced obese mice. They also significantly decreased lipid accumulation and the expressions of two major adipogenesis factors, PPAR<I><I>γ</I></I> and C/EBP<I><I>α</I></I>, in 3T3-L1 cells. In addition, the PG-VN combination had synergistic effects compared with the mixture of extracts of PG and VN on inhibition of PPAR<I><I>γ</I></I> and C/EBP<I><I>α</I></I> expressions at lower doses. These results indicate a new potential anti-obese pharmacotherapy and also provide scientific evidence supporting the usage of herbal combinations instead of mixtures in KM.</P>
Porphyrinuria in Korean children with autism: correlation with oxidative stress.
Youn, Seung-Il,Jin, Soo-Hee,Kim, Sung-Hoon,Lim, Sabina Taylor Francis 2010 Journal of toxicology and environmental health. Pa Vol.73 No.10
<P>Autism spectrum disorder (ASD) is a neurodevelopmental disorder believed to be associated with heavy metal exposure, especially mercury (Hg), and is characterized by disturbances in metal elimination. Various studies correlated elevated heavy metal body burden with ASD diagnoses as evidenced by increased urinary porphyrin levels in patients. Urinary porphyrins were also determined in Korean patients diagnosed with ASD (n = 65) who visited AK Eastern Medicinal Clinic in Kangnam-gu, Seoul, from June 2007 to September 2008, compared to controls (n = 9) residing in the same area, by means of Metametrix (CLIA-approved) laboratory testing. Further, urinary organic acids as indicators of hepatic detoxification/oxidative stress were also analyzed among patients diagnosed with ASD. Significant increases were found in patients diagnosed with ASD for proporphyrins, pentacarboxyporphyrin, precoproporphyrin, coproporphyrins, and total porphyrins. Significant correlations were observed between hepatic detoxification/oxidative stress markers and urinary porphyrins. In agreement with published data, the present results demonstrated that measurement of porphyrins serves as a reliable tool for diagnosis of heavy metal involvement in ASD.</P>
Lim, Keon-Hee,Lee, Jinwon,Huh, Jae-Eun,Park, Jintaek,Lee, Jun-Hee,Lee, Sung-Eun,Kim, Youn Sang The Royal Society of Chemistry 2017 Journal of Materials Chemistry C Vol.5 No.31
<▼1><P>Here we report a systematic study on the effects of precursors and solvents in solution-processed oxide semiconductor thin film transistors.</P></▼1><▼2><P>Solution-processed oxide semiconductor thin-film transistors (OS TFTs) have attracted much attention as a future display technology, because they have intrinsic properties such as flexibility and transparency as well as fabrication process advantages. Accordingly, to realize solution-processed high performance OS TFTs, various solutions have been developed. However, since it has been focused on the development of the solution itself, there have been no systematic approaches to independently study the effects of precursors and solvents for understanding and optimizing solution-processed OS TFTs. Here, we report a systematic study on the effects of precursors and solvents in solution-processed OS TFTs. Preferentially, InZnxOy (IZO) TFTs fabricated with various specific precursors and solvents are analyzed. It is confirmed that the electrical properties of IZO TFTs including field-effect mobility and <I>V</I>on are strongly affected by the types of precursors and solvents. Through various analyses including the TFT model, and X-ray based analyses, we discover that changes in the electrical properties are related to changes in the physical and intrinsic film properties of IZO films depending on the types of precursors and solvents. With observation of trends in the changes, the effects of precursors and solvents were investigated to better understand and optimize solution-processed OS TFTs.</P></▼2>
Lim, Keon-Hee,Huh, Jae-Eun,Lee, Jinwon,Cho, Nam-Kwang,Park, Jun-woo,Nam, Bu-il,Lee, Eungkyu,Kim, Youn Sang American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.1
<P>Oxide semiconductors thin film transistors (OS TFTs) with good transparency and electrical performance have great potential for future display technology. In particular, solution-processed OS TFTs have been attracted much attention due to many advantages such as continuous, large scale, and low cost processability. Recently, OS TFTs fabricated with a metal aqua complex have been focused because they have low temperature processability for deposition on flexible substrate as well as high field-effect mobility for application of advanced display. However, despite some remarkable results, important factors to optimize their electrical performance with reproducibility and uniformity have not yet been achieved. Here, we newly introduce the strong effects of humidity to enhance the electrical performance of OS TFTs fabricated with the metal aqua complex. Through humidity control during the spin-coating process and annealing process, we successfully demonstrate solution-processed InOx/SiO2 TFTs with a good electrical uniformity of similar to 5% standard deviation, showing high average field-effect mobility of 2.76 cm(2)V(-1)s(-1) and 15.28 cm(2)V(-1)s(-1) fabricated at 200 and 250 degrees C, respectively. Also, on the basis of the systematic analyses, we demonstrate the mechanism for the change in electrical properties of InOx TFTs depending on the humidity control. Finally, on the basis of the mechanism, we extended the humidity control to the fabrication of the AlOx insulator. Subsequently, we successfully achieved humidity-controlled InOx/AlOx TFTs fabricated at 200 degrees C showing high average field-effect mobility of 9.5 cm(2)V(-1)s(-1).</P>
Lim, Sung Yul,Ha, Kyungyeon,Ha, Heonhak,Lee, Soo Youn,Jang, Min Seok,Choi, Mansoo,Chung, Taek Dong The Royal Society of Chemistry 2019 Physical chemistry chemical physics Vol.21 No.8
<P>Platinum is still the most active element for the hydrogen evolution reaction (HER); however, it suffers from its scarcity and high cost. Thus, significant efforts have been dedicated to maximize the catalytic activity with less loading. When Pt is utilized at a semiconductor surface, more factors have to be considered. Placing a catalyst directly in contact with a semiconductor supports the extraction of photogenerated minority carriers as well as boosts the catalytic reactions. In addition, a catalyst should be designed with prudence not to interfere in the light path with respect to absorption at the underlying substrate. Herein, we report the development of planar Si-based photocathodes, covered with a native oxide, for the HER, which also satisfy the prerequisites for the use of a three-dimensionally patterned, flower-like Ag-Pt catalyst. The catalyst consisted of nanoparticles of homogeneously alloyed Ag and Pt, fabricated by a galvanic exchange of Pt with Ag. Importantly, these two elements were proven to have their own functionalities. Ag not only contributed to transporting e<SUP>−</SUP> and Had to the Pt for subsequent processes of the HER but also effectively extracted minority carriers by diluting the high work function of Pt, leading to a better Schottky barrier at the catalyst-insulator-semiconductor junction. Furthermore, computational simulation revealed that the proposed catalyst pattern alleviated optical light loss with the increasing catalyst loading compared to the two-dimensional case. Owing to these effects, we could achieve 0.36 V (<I>vs.</I> reversible hydrogen electrode) as an open circuit potential and the near maximum current density of planar p-type Si. The findings in this work suggests deeper insights that could support the design of catalysts for solar-fuel systems.</P>
Lim, Yeong-Min,Yang, Pil-Sung,Jang, Eunsun,Yu, Hee Tae,Kim, Tae-Hoon,Uhm, Jae-Sun,Kim, Jong-Youn,Pak, Hui-Nam,Lee, Moon-Hyoung,Joung, Boyoung,Lip, Gregory Y.H. Elsevier 2019 Mayo Clinic proceedings Vol.94 No.2
<P><B>Abstract</B></P> <P><B>Objective</B></P> <P>To assess the effects of body mass index (BMI) variability on the incidence of new-onset atrial fibrillation (AF), stroke, cardiovascular (CV) risk factors, and CV outcomes in a general Asian population.</P> <P><B>Patients and Methods</B></P> <P>Data from the National Health Insurance Service–Health Screening cohort in Korea were used: 171,324 patients without AF were included, and BMI measurements occurred biennially from January 1, 2002, through December 31, 2009. Patient outcomes were followed through 2013. The BMI intraindividual variability between visits was measured.</P> <P><B>Results</B></P> <P>During mean ± SD follow-up of 47.4±3.9 months, 1959 patients (1.1%) developed new-onset AF. Overweight or obesity (BMI ≥25) had a greater risk of new-onset AF compared with BMI of 20 to 22.5, with a hazard ratio (HR) of 1.24 (95% CI, 1.10-1.41; <I>P</I><.001). In underweight or normal-weight participants (initial BMI <25), a 1-kg/m<SUP>2</SUP> increase of BMI variability increased the risk of new-onset AF, with an adjusted HR (aHR) of 1.13 (95% CI, 1.01-1.25; <I>P</I>=.02). Weight gain increased the risk of new-onset AF (aHR, 1.32; 95% CI, 1.01-1.71; <I>P</I>=.04) and myocardial infarction (aHR, 1.52; 95% CI, 1.06-2.18; <I>P</I>=.02) but not stroke. In this group, blood pressure, glucose level, and total cholesterol level were higher in individuals with the greatest BMI variability compared with those with stable BMI.</P> <P><B>Conclusion</B></P> <P>In the underweight and normal-weight Asian population, BMI variability, especially weight gain, was related to increased risk of new-onset AF and myocardial infarction. Avoiding weight gain is important to improve CV outcomes.</P>