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Ramezani daevish, S.,Rastogi, A.C.,Bhatnagar, P.K. 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.e3
Crystalline structure induced effecs on the ferroelectric and current conduction properties in electron beam deposited PZT thin films are described. $TiO_2$ dispersion in PZT reduces dielectric constant and charge storage density to 270 and $3.5\;{\mu}C/cm^2$ and increases carrier density. Pyrochlore PZT inclusion cause further reduction to 60 and $77fC/cm^2$ but have no effect on the microscpic polarization. Activated conduction energy 0.25-0.3eV is observed in $TiO_2$ mixed PZT. Low field conduction is ohmic and changes to space charge limited at a threshold field $8{\times}10^4\;V/cm$. Inclusion of pyrochlore phase causes deep traps ${\thickapprox}5{\times}10^18cm^-3$ and increased hole density of ${\thickapprox}\;3{\times}10^11\;cm^-3$.