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The Effect of CdS QDs Structure on the InGaP/GaAs/Ge Triple Junction Solar Cell Efficiency
Chen-Chen Chung,Binh Tinh Tran,Hau-Vei Han,Yen-Teng Ho,Hung-Wei Yu,Kung-Liang Lin,Hong-Quan Nguyen,Peichen Yu,Hao-Chung Kuo,Edward Yi Chang 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.2
This work describes optical and electrical characteristics of InGaP/GaAs/Ge triple-junction (T-J) solar cells with CdS quantum dots (QDs) fabricated by a novel chemical solution. With the anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency more than that of a traditional GaAs-based device. Experimental results indicate that CdS quantum dot can enhance the short-circuit current by 0.33 mA/cm2, which is observed for the triple-junction solar cells with CdS QDs of about 3.5 nm in diameter. Moreover, the solar cell conversion efficiency is improved from 28.3% to 29.0% under one-sun AM 1.5 global illumination I-V measurement.