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      • Prediction of Survival by [<sup>18</sup>F]Fluorodeoxyglucose Positron Emission Tomography in Patients With Locally Advanced Non–Small-Cell Lung Cancer Undergoing Definitive Chemoradiation Therapy: Results of the ACRIN 6668/RTOG 0235 Trial

        Machtay, Mitchell,Duan, Fenghai,Siegel, Barry A.,Snyder, Bradley S.,Gorelick, Jeremy J.,Reddin, Janet S.,Munden, Reginald,Johnson, Douglas W.,Wilf, Larry H.,DeNittis, Albert,Sherwin, Nancy,Cho, Kwan H American Society for Clinical Oncology 2013 Journal of clinical oncology Vol.31 No.30

        <P><B>Purpose</B></P><P>In this prospective National Cancer Institute–funded American College of Radiology Imaging Network/Radiation Therapy Oncology Group cooperative group trial, we hypothesized that standardized uptake value (SUV) on post-treatment [<SUP>18</SUP>F]fluorodeoxyglucose positron emission tomography (FDG-PET) correlates with survival in stage III non–small-cell lung cancer (NSCLC).</P><P><B>Patients and Methods</B></P><P>Patients received conventional concurrent platinum-based chemoradiotherapy without surgery; postradiotherapy consolidation chemotherapy was allowed. Post-treatment FDG-PET was performed at approximately 14 weeks after radiotherapy. SUVs were analyzed both as peak SUV (SUV<SUB>peak</SUB>) and maximum SUV (SUV<SUB>max</SUB>; both institutional and central review readings), with institutional SUV<SUB>peak</SUB> as the primary end point. Relationships between the continuous and categorical (cutoff) SUVs and survival were analyzed using Cox proportional hazards multivariate models.</P><P><B>Results</B></P><P>Of 250 enrolled patients (226 were evaluable for pretreatment SUV), 173 patients were evaluable for post-treatment SUV analyses. The 2-year survival rate for the entire population was 42.5%. Pretreatment SUV<SUB>peak</SUB> and SUV<SUB>max</SUB> (mean, 10.3 and 13.1, respectively) were not associated with survival. Mean post-treatment SUV<SUB>peak</SUB> and SUV<SUB>max</SUB> were 3.2 and 4.0, respectively. Post-treatment SUV<SUB>peak</SUB> was associated with survival in a continuous variable model (hazard ratio, 1.087; 95% CI, 1.014 to 1.166; <I>P</I> = .020). When analyzed as a prespecified binary value (≤ <I>v</I> > 3.5), there was no association with survival. However, in exploratory analyses, significant results for survival were found using an SUV<SUB>peak</SUB> cutoff of 5.0 (<I>P</I> = .041) or 7.0 (<I>P</I> < .001). All results were similar when SUV<SUB>max</SUB> was used in univariate and multivariate models in place of SUV<SUB>peak</SUB>.</P><P><B>Conclusion</B></P><P>Higher post-treatment tumor SUV (SUV<SUB>peak</SUB> or SUV<SUB>max</SUB>) is associated with worse survival in stage III NSCLC, although a clear cutoff value for routine clinical use as a prognostic factor is uncertain at this time.</P>

      • SCISCIESCOPUS

        Electrical characterization of single GaN nanowires

        Stern, E,Cheng, G,Cimpoiasu, E,Klie, R,Guthrie, S,Klemic, J,Kretzschmar, I,Steinlauf, E,Turner-Evans, D,Broomfield, E,Hyland, J,Koudelka, R,Boone, T,Young, M,Sanders, A,Munden, R,Lee, T,Routenberg, D IOP Pub 2005 Nanotechnology Vol.16 No.12

        <P>In this paper a statistically significant study of 1096 individual GaN nanowire (NW) devices is presented. We have correlated the effects of changing growth parameters for hot-wall chemically-vapour-deposited (HW-CVD) NWs fabricated via the vapour–liquid–solid mechanism. We first describe an optical lithographic method for creating Ohmic contacts to NW field effect transistors with both top and bottom electrostatic gates to characterize carrier density and mobility. Multiprobe measurements show that carrier modulation occurs in the channel and is not a contact effect. We then show that NW fabrication runs with nominally identical growth parameters yield similar electrical results across sample populations of >50 devices. By systematically altering the growth parameters we were able to decrease the average carrier concentration for these as-grown GaN NWs ∼10-fold, from 2.29 × 10<SUP>20</SUP> to 2.45 × 10<SUP>19</SUP> cm<SUP>−3</SUP>, and successfully elucidate the parameters that exert the strongest influence on wire quality. Furthermore, this study shows that nitrogen vacancies, and not oxygen impurities, are the dominant intrinsic dopant in HW-CVD GaN NWs.</P>

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