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Won Hee Lee,Jin-Moo Lee,Mihee Uhm,Jieun Lee,Kyung Rok Kim,Sung-Jin Choi,Dong Myong Kim,Yong-Joo Jeong,Dae Hwan Kim IEEE 2014 IEEE electron device letters Vol.35 No.5
<P>The effect of streptavidin concentration as a target molecule on the subthreshold swing (SS) of biotin-functionalized silicon nanoribbon sensors was investigated for a configuration of field effect transistors. The increasing concentration of conjugated target molecules was modeled as a degradation of the coupling capacitance between the electrolyte and the sensor surface. A binding factor for the ratio of conjugation between targets and receptors was modeled as a coupled capacitance and experimentally determined to be from 0.65 (streptavidin at 1 pM) to 1 (1 nM). This result suggests that SS is potentially a good indicator of the target concentration.</P>
Euiyoun Hong,Daeyoun Yun,Hagyoul Bae,Hyunjun Choi,Won Hee Lee,Mihee Uhm,Hyojoon Seo,Jieun Lee,Jaeman Jang,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.7
<P>A distribution of interface states (<I>D</I><SUB>it</SUB>) in SOI MOSFETs has been characterized by a subbandgap optical differential body-factor (SODBoF) technique. We adopted a subbandgap (<I>E</I><SUB>ph</SUB> <; <I>E</I><SUB>g</SUB>) optical source as a virtual gate on the body-contactless SOI MOSFETs under the subthreshold (<I>V</I><SUB>GS</SUB> <; <I>V</I><SUB>T</SUB>) current-voltage characteristics. Employing a differentiation to the body factor, any possible error from the threshold voltage is also suppressed. We applied the SODBoF technique to n- and p-channel SOI MOSFETs on the same wafer and verified the result. Extracted traps over the bandgap ranges <I>D</I><SUB>it</SUB> = 10<SUP>10</SUP> - 10<SUP>11</SUP> cm<SUP>-2</SUP>·eV<SUP>-1</SUP> with a typical U-shape.</P>
Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output
Jieun Lee,Jin-Moo Lee,Jung Han Lee,Won Hee Lee,Mihee Uhm,Byung-Gook Park,Dong Myong Kim,Yong-Joo Jeong,Dae Hwan Kim IEEE 2012 IEEE electron device letters Vol.33 No.12
<P>Complementary Si nanowire (SiNW) hydrogen ion sensors with high sensitivity and robust voltage output are demonstrated on a 6-in silicon-on-insulator wafer using a conventional wafer-level top-down process. The proposed SiNW sensors exhibit a logic threshold voltage shift of 88.9 mV/pH and an output voltage swing of 162 mV/pH. Furthermore, a simplified analytical model confirms that the proposed sensors have an output voltage swing that is 1.6 times larger than single SiNW sensor counterparts with a resistive load. Therefore, the proposed fabrication approach is expected to be a good solution for a very sensitive voltage readout scheme for the mass production of top-down processed biosensors.</P>
Hagyoul Bae,Inseok Hur,Ja Sun Shin,Daeyoun Yun,Euiyoun Hong,Keum-Dong Jung,Mun-Soo Park,Sunwoong Choi,Won Hee Lee,Mihee Uhm,Dae Hwan Kim,Dong Myong Kim IEEE 2012 IEEE electron device letters Vol.33 No.4
<P>We report a hybrid technique for extraction of structure- and gate-bias-dependent parasitic source/drain (S/D) resistances (<I>RS</I> and <I>RD</I>) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). In the proposed technique, <I>C</I>- <I>V</I> and <I>I</I> -<I>V</I> measurements are combined for modeling and extraction. As structural dependence, the active-layer thickness <I>T</I><SUB>IGZO</SUB> , the gate length <I>L</I>, and the overlap length <I>L</I><SUB>ov</SUB> between the S/D and the gate are considered in the equivalent circuit for parasitic resistances. We also separated the horizontal component <I>RH</I> considering the transfer resistance <I>R</I><SUB>LT</SUB> depending on the transfer length <I>LT</I> and the channel resistance <I>R</I><SUB>CH</SUB>, as well as the vertical components in the S/D <I>R</I><SUB>VS</SUB> and <I>R</I><SUB>VD</SUB>. We confirmed the proposed technique through a separate extraction of <I>VGS</I> -independent contact resistances (<I>R</I><SUB>CS</SUB>, <I>R</I><SUB>CD</SUB>) from the channel length- and <I>VGS</I>-dependent <I>R</I><SUB>LT</SUB> and <I>R</I><SUB>CH</SUB>.</P>