http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Mah Jae-Pyung (검색결과 32 건)
- 무료
- 기관 내 무료
- 유료
-
저전압용 ZnO varistor 계의 nonohmic 특성에 대한 Bi₂O₃의 영향
馬在坪 호남대학교 1991 호남대학교 학술논문집 Vol.12 No.2
Two systems orienting low voltage varistor were investigated by electrical and mocrostructural methods. Zn, Bi, Co, Mn-oxide system has so relatively large grain size that this showed low breakdown voltage, hence in the development of low voltage varistor this system can be used it as basic system. Its nonlinear exponents were 20 or more, and nonlinear resistances were 40 V/mm or less, but real breakdown voltage in Ⅴ-Ⅰ plotting was about 30 V/mm. Adequate Bi₂O₃ amount is about 1.0mol%.
-
높은 비직선지수를 갖는 ZnO varistor의 기본구성
馬在坪 호남대학교 1992 호남대학교 학술논문집 Vol.13 No.-
In order to determine the standard composition of ZnO varistor having higher nonlinear exponent, various contents of Mn - and Co-oxides were added to ZnO-1.0 Bi₂O₃system. Also, the samples that contain small amount of Sb - and Si -oxides in the ZnO varistor with the standard composition determined above were fabricated. As a result, the standard composition of the ZnO varistor orienting higher nonlinearity was established as ZnO -1.0 Bi₂O₃-1.0 MnO₂O₃Nonlinear exponents were largely enhanced by addition of Sb-and Si- oxide.
-
마재평 호남대학교 2000 호남대학교 학술논문집 Vol.21 No.2
The phase formations of PZT thin films sputtered on the single Si substrate were investigated to establish the base in this field. Perovskite phase was not shown in PZT films furnace-annealed, and lead-oxide,-silicates were formed. This phenomena were due to the severe dissociation and/or diffusion of PZT's components and Si. PZT thin films were undergone by too high heat-input by furnace-annealing and their polarization characteristics were degradaded, so it was proposed that the substrate for diffusion-barrier and the RTA as post-annealing were needed in the formation of ferroelectric PZT films.
-
장벽높이와 carrier농도가 ZnO varistor의 nonohmic 특성에 미치는 영향
馬在坪 호남대학교 1993 호남대학교 학술논문집 Vol.14 No.-
The barrier height and the donor concentration of thenstandard system of low voltage-oriented ZnO varistor and the systems that Sb2O3, SiO2, TiO2 and Zn were were added, respectively, were obtained by C.V plot. The systems that Sb2O3 and SiO were added showed high barrier height and the systems that TiO2 and Zn were added showed high donor concentration. We considered that the relationship between donor concentration, barrier height and variation of I.V characteristics. We found that the system having high barrier height showed small leakage current. And we found that the system having high donor concentration showed small Vth and then, we thought that high donor concentration lowered the breakdown voltage.
-
마재평 호남대학교 정보통신연구소 2000 정보통신연구 Vol.10 No.-
The ferroelectric PZT thin films for FRAM's capacitor were deposited on the Si and Pt/Si substrate by rf magnetron sputtering followed by rapid thermal annealing at 550℃ to 750℃, and their phase formations and characteristics were investigated. RTA time was from 15 to 75 seconds. The phase formations and the composition of the thin films were investigated by XRD and RBS, and the dielectric and I-V characteristics were measured by HP4194A and HP4145B, respectively. The optimum excess PbO-amount was shown to 5%, and the crystallization was completed at the RTA condition of 650℃-30 seconds. The samples fabricated under that condition showed the breakdown voltage of 0.7 MV/cm, the dielectric constant of 500 and the leakage current density of 10-5 A/cm2
-
FeRAM의 커패시터용 SrTiO_3 박막의 유전특성에 대한 과잉 SrO의 영향
마재평 호남대학교 2002 호남대학교 학술논문집 Vol.23 No.2
SrTiO_3 thin films containing excess SrO were deposited with the substrate temperatures of 500℃ or more, using a sputtering method. The improved dielectric characteristics could be introduced into the capacitor dielectric for ULSL. In the case of 5 mol% SrO addition, SrTiO_3 thin films showed dielectric constant of 320 and very small leakage current. SrTiO_3 thin films were considered as the most expectable dielectrics for ULSI's capacitor layer.
-
ZnO varistor의 nonohmic 특성에 대한 Si-Oxides의 영향
마재평 호남대학교산업기술연구소 1997 산업기술연구논문집 Vol.4 No.-
저전압용 ZnO varistor의 항복특성을 향상시키기 위하여, Si-oxides의 양과 소결 조건을 조절하였다. 또, 항복전압을 저하시키기 위하여 TiO₂를 첨가한 시편도 만들었다. 비선형지수, 비선형저항 그리고 전압-전류 특성 등을 조사하였다. 이들 nonohmic 특성들을 시편의 미세구조와 Si이 분포하는 위치와 비교하며 검토하였다. Si-oxides는 비선형지수를 크게 상승시켰다. 이때의 적절한 소결 조건은 1,200 내지 1,25℃에서 1시간이었다. 그리고, TiO₂의 첨가는 ZnO varistor의 항복전압을 낮게하였다. To enhance the breakdown properties of low voltage-oriented ZnO varistor, the samples were fabricated with the amounts of Si-oxides and the sintering conditions. And then, to lower the breakdown voltage TiO₂-ADDED SAMPLES WERE ALSO FABRICATED. The nonlinear exponent, the nonlinear resistance and the V-I characteristics of the samples were investigated. These nonohmic properties were discussed with the microstructures and the position of Si by EDS. Si-oxides, especially, largely enhanced the nonlinear exponent. In this case optimun sintering conditions were 1,200-1,250℃-1 hr. And, TiO₂addition lowered the breakdown voltage of ZnO varistor.
-
마재평 호남대학교 산업기술연구소 2001 산업기술연구논문집 Vol.9 No.-
기가 디램급의 커패시터 유전체층으로 유망한 스트론슘 타이타네이트 박막을 고찰하였다. 500℃ 이상의 기판 온도에서 rf-magnetron 스퍼터링 방법으로 ST 박막을 제조하였다. 또한 누설전류에 대한 산소 분압의 영향을 조사하였다. 200 이상의 유전상수와 10-7 A/cm2 이하의 누설전류를 나타낼 수 있는 개선된 특성을 갖는 기가 디램급용의 커패시터 유전물질을 제시할 수 있었다. SrTiO3(ST) films were considered the most promising candidates for the capacitor dielectric layer of Giga bit DRAMs. ST films were prepared with the substrate temperature of 500℃ or more, using a rf-magnetron sputtering techniques. And, the dependence of the leakage current on O2 partial pressure in the atmosphere was studied. The improved results could be introduced into the capacitor dielectric for Giga bit DRAM memories. : Dielectric constant of 200 or more and leakage current density of 10 A/㎠ or lower.
-
마재평 호남대학교 1999 호남대학교 학술논문집 Vol.20 No.2
The phase formations of ferroelectric PZT thin films were studied to survey applicability for ULSI's capacitor. PZT films were deposited by RF magnetron sputtering on Si and Pt/Ti substrates followed by annealing at 550℃ or more. Higher deposition rate was achieved at 1.0×10?? Torr or under and at shorter substrate-target distance.
-
2단계 sputtering으로 제조한 PZT 박막의 특성
마재평 호남대학교 1997 호남대학교 학술논문집 Vol.18 No.4
PZT thin films were fabricated on Pt/Ti/SiO₂/Si substrates by 2-step sputtering. In-situ process was used to form a ferroelectric perobskite structure and a higher density film. In the case of the samples that were deposited for 10 minute at room temperature and for 110 minute at 600℃, dielectric constant is 900 or more and breakdown voltage is 23V. Especially, the leakage current of the samples containing amorphous PZT layer was decreased. Covering effect of the amorphous layer formed at room temperature is excellent, and, therefore, the dielectric properties of the PZT films containing thin amorphous layer were improved by 2-step sputtering.
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
