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Super-resolution Optical Measurement of Nanoscale Photoacid Distribution in Lithographic Materials
Berro, Adam J.,Berglund, Andrew J.,Carmichael, Peter T.,Kim, Jong Seung,Liddle, J. Alexander American Chemical Society 2012 ACS NANO Vol.6 No.11
<P>We demonstrate a method using photoactivation localization microscopy (PALM) in a soft-material system, with a rhodamine-lactam dye that is activated by both ultraviolet light and protonation, to reveal the nanoscale photoacid distribution in a model photoresist. Chemically amplified resists are the principal lithographic materials used in the semiconductor industry. The photoacid distribution generated upon exposure and its subsequent evolution during post-exposure bake is a major limiting factor in determining the resolution and lithographic quality of the final developed resist image. Our PALM data sets resolve the acid distribution in a latent image with subdiffraction limit accuracy. Our overall accuracy is currently limited by residual mechanical drift.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2012/ancac3.2012.6.issue-11/nn304285m/production/images/medium/nn-2012-04285m_0008.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn304285m'>ACS Electronic Supporting Info</A></P>
Fabrication of 30 nm pitch imprint moulds by frequency doubling for nanowire arrays
Yu, Zhaoning,Wu, Wei,Jung, Gun-Young,Olynick, D L,Straznicky, J,Li, Xuema,Li, Zhiyong,Tong, William M,Liddle, J A,Wang, Shih-Yuan,Stanley Williams, R IOP Pub 2006 Nanotechnology Vol.17 No.19
<P>We report the fabrication of 30 nm pitch nanowire array imprint moulds by spatial frequency doubling a 60 nm pitch array generated by electron beam lithography. We have successfully fabricated nanowire arrays at a 30 nm pitch, which is targeted for the year 2020 by the International Technology Roadmap for Semiconductors, with an average line-width of 17 nm and a 3σ line width roughness (LWR) of 4.0 nm. In contrast to previously reported procedures, our spatial frequency doubling technique produces electrically isolated nanowires that are appropriate for crossbar circuits. </P>