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RISS 인기검색어
- 검색키워드
- 저자 : L. T. CHADDERTON (검색결과 2 건)
- 무료
- 기관 내 무료
- 유료
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GROWTH OF CARBON NANOTUBES IN ETCHED ION TRACKS IN SILICON OXIDE ON SILICON
J. S. JUNG,L. T. CHADDERTON,A. S. BERDINSKY,P. S. ALEGAONKAR,H. C. LEE,J. H. HAN,J. B. YOO,D. FINK 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2007 NANO Vol.2 No.1
Carbon nanotubes (CNTs) were selectively grown in etched ion tracks in SiO2 layers on Si. For this sake, Ni-catalyst nanocrystals were initially deposited within the ion tracks by galvanic deposition. The characteristics of plasma-enhanced chemical vapor deposition (PECVD)- and thermal chemical vapor deposition (TCVD)-grown CNTs, such as structural details and length distribution, were investigated. In addition, field emission properties were studied. The analysis revealed that the emerging PECVD-grown CNTs were of cylindrical and/or conical shape and usually had diameters as large as the etched tracks. The exponential length distribution of these CNTs can be well understood by applying a simple defect-growth model. For contrast, many narrow and curled CNTs were found to cluster in spots well separated from each other, after applying TCVD instead of PECVD. The Raman investigations of PECVD-grown CNTs showed that Si–O–C and Si–C phases had formed during the growth of the CNTs. These ion-track-correlated PECVD-grown CNTs open the way for the production of novel 3D nanoelectronic devices based on the TEMPOS concept. These structures are also excellent candidates for experiments on channeling in CNTs. Application as field emitting devices, however, appears unfavorable due to poor mean-field enhancement factors and insufficient stability.
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Influence of Axial Mechanical Stress on the Xonductivity of Fullerite Powder
A.S.Berdinsky,D.Fink,천희곤,L.T.Chadderton 한국센서학회 2004 센서학회지 Vol.13 No.4
The possibility to use powder consisting of fullerite microcrystallines as a device sensitive to the external axialmechanical load is considered. We suppose that the change of conductivity of fullerite microcrystalline powder as afunction of external mechanical stress will be useful for the creation of nanoscale devices of sensor electronics. This neweffect based on changing of intermolecular distance between fullerene molecules due to the action of external mechanicalforce, which can change the distance between fulerene molecules because of weak van der Waals interaction exists. Thefounded effect is quite linear and sensitive to external mechanical stress is better then in well-known pressure transducersis based on silicon technology.
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