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Raman and Photoluminescence Properties of Type II GaSb/GaAs Quantum Dots on (001) Ge Substrate
Zon,Thanavorn Poempool,Suwit Kiravittaya,Noppadon Nuntawong,Suwat Sopitpan,Supachok Thainoi,Songphol Kanjanachuchai,Somchai Ratanathammaphan,Somsak Panyakeow 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.4
We investigate structural Raman and photoluminescence properties oftype II GaSb/GaAs quantum dots (QDs) grown on (001) Ge substrateby molecular beam epitaxy. Array of self-assembled GaSb QDshaving an areal density of ~1.66 × 1010 dots/cm2 is obtained by agrowth at relatively low substrate temperature (450 °C) on a GaAssurface segmented into anti-phase domains (APDs). Most of QDsform in one APD area. However, a few QDs can be observed at theAPD boundaries. Raman spectroscopy is used to probe the strain inGaAs layer. Slight redshift of both LO and TO GaAs peaks areobserved when GaSb QDs are buried into GaAs matrix. Opticalproperties of capped QDs are characterized by photoluminescencemeasurement at low temperatures (20 K and 30 K). Emission peaks ofGaSb/GaAs QDs are found in the range of 1.0-1.3 eV at bothtemperatures. Slight redshift is observed when the laser excitationpower is increased at 20 K while blueshift of QD peak is observed at30 K. We attribute this abnormal behavior to the contribution ofoverlapped GaSb wetting layer peak in the PL emission as well as thefeature of type II band structure.