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MoS<sub>2</sub>–InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity
Yang, Jaehyun,Kwak, Hyena,Lee, Youngbin,Kang, Yu-Seon,Cho, Mann-Ho,Cho, Jeong Ho,Kim, Yong-Hoon,Jeong, Seong-Jun,Park, Seongjun,Lee, Hoo-Jeong,Kim, Hyoungsub American Chemical Society 2016 ACS APPLIED MATERIALS & INTERFACES Vol.8 No.13
<P>We introduce an amorphous indium gallium zinc-oxide (a-IGZO) heterostructure phototransistor consisting of solution-based synthetic molybdenum disulfide (few-layered MoS2, with a band gap of similar to 1.7 eV) and sputter-deposited a-IGZO (with a band gap of similar to 3.0 eV) films as a novel sensing element with a broad spectral responsivity. The MoS2 and a-IGZO films serve as a visible light-absorbing layer and a high mobility channel layer, respectively. Spectroscopic measure ments reveal that appropriate band alignment at the heterojunction provides effective transfer of the visible light induced electrons generated in the few-layered MoS2 film to the underlying a-IGZO channel layer with a high carrier mobility. The photoresponse characteristics of the a-IGZO transistor are extended to cover most of the visible range by forming a heterojunction phototransistor that harnesses a visible light responding MoS2 film with a small band gap prepared through a large-area synthetic route. The MoS2-IGZO heterojunction phototransistors exhibit a photoresponsivity of approximately 1.7 A/W at a wavelength of 520 nm (an optical power of 1 mu W) with excellent time-dependent photoresponse dynamics.</P>