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Jyothi, I.,Seo, M.W.,Janardhanam, V.,Shim, K.H.,Lee, Y.B.,Ahn, K.S.,Choi, C.J. Elsevier Sequoia 2013 Journal of alloys and compounds Vol.556 No.-
We fabricated Er-silicide (ErSi<SUB>1.7</SUB>) Schottky contacts to strained Si-on-insulator (sSOI) with a strain level of 0.77% and investigated their electrical properties in the temperature range of 225-400K. The Schottky parameters such as the barrier height, ideality factor, and series resistance were found to strongly depend on temperature. Barrier height and ideality factor were found to decrease and increase, respectively, with decreasing temperature. The series resistance gradually increased with decreasing temperature. A discrepancy between the Schottky barrier heights calculated from the forward current-voltage (I-V) characteristics and Norde's method indicated a deviation from the ideal thermionic emission of ErSi<SUB>1.7</SUB>/sSOI Schottky diode. The lateral inhomogeneity of the Schottky barrier and potential fluctuations at the interface between ErSi<SUB>1.7</SUB> and sSOI could be a main cause of the difference between the calculated and theoretical values of the Richardson constant. On the basis of a thermionic emission mechanism with a Gaussian distribution of the barrier heights, temperature dependency of ErSi<SUB>1.7</SUB> Schottky contact to sSOI was explained in terms of the barrier height inhomogeneities at the interface.
Microstructural and electrical properties of Cu-germanide formed on p-type Ge wafer
Jyothi, I.,Janardhanam, V.,Hwang, J.Y.,Lee, W.K.,Park, Y.C.,Kang, H.C.,Lee, S.N.,Choi, C.J. Elsevier Sequoia 2016 JOURNAL OF ALLOYS AND COMPOUNDS Vol.655 No.-
We have investigated the microstructural and electrical properties of Cu-germanides formed by the deposition of Cu on Ge wafer, followed by rapid thermal annealing (RTA) process at the temperatures in the range of 300-700 <SUP>o</SUP>C. Regardless of RTA temperature, the Cu<SUB>3</SUB>Ge was the only phase formed as a result of solid-state reaction between Cu and Ge driven by RTA process. The RTA temperature dependency of specific contact resistivity of Cu<SUB>3</SUB>Ge was explained in terms of its structural evolution caused by RTA process. The RTA process at 400 <SUP>o</SUP>C led to the formation of Cu<SUB>3</SUB>Ge film having highly uniform surface and interface morphologies, allowing the minimum value of the specific contact resistivity. The samples annealed above 500 <SUP>o</SUP>C underwent the severe structural degradation of Cu<SUB>3</SUB>Ge, resulting in a rapid increase in the specific contact resistivity. After RTA at 700 <SUP>o</SUP>C, pyramidal Cu<SUB>3</SUB>Ge islands standing on a corner, distributed along Ge <110> direction were formed with epitaxial relationship on underlying Ge.
Jyothi, I.,Lee, Hoon-Ki,Janardhanam, V.,Lee, Sung-Nam,Choi, Chel-Jong American Scientific Publishers 2017 Journal of Nanoscience and Nanotechnology Vol.17 No.10
<P>The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of a Ti/p-type strained Si-on-insulator (sSOI) Schottky diode were measured as a function of temperature in the range, 175-375 K. The Schottky barrier parameters of the Ti/p-type sSOI diode, which were interpreted using thermionic emission theory, indicated a strong temperature dependence of the barrier height and ideality factor. The barrier height and ideality factor decreased and increased, respectively, with decreasing temperature, which was attributed to the distribution of barrier heights due to the inhomogeneity at the metal-semiconductor interface. In addition, the discrepancy in the barrier heights obtained from the I-V and C-V techniques confirmed the inhomogeneities in the Schottky barrier. The inhomogeneities in the barrier characterized under the assumption of a Gaussian distribution revealed the existence of a double barrier distribution with a transition occurring at 275 K. The Richardson plot interpreted with the Gaussian distribution approach yielded a Richardson constant of 21.4 Acm(-2)K(-2) in the high temperature region close to the theoretical value of 31.6 Acm(-2)K(-2) for p-type sSOI. The low frequency noise measurements of the Ti/p-type sSOI Schottky diodes in the forward bias exhibited a 1/f(gamma) dependence with gamma ranging from 0.67 to 1.30, indicating the origin of noise due to the fluctuations in the carrier number caused by trapping-detrapping processes in the traps of the depletion region. Furthermore, the current-noise-power spectral density indicated the presence of defect states or traps existing in the depletion region or in the forbidden gap of the sample.</P>
( Jyothi Rajesh Kumar ),( In-hyeok Choi ),( Jin-young Lee ) 한국화학공학회 2017 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.55 No.4
The present experimental study proposed two ionic liquids (ILs) namely [Aliquat 336] [HSO<sub>4</sub>] (prepared and characterized at our laboratory) and Cyphos 101 IL (supplied by Cytec Company) dissolved in two different diluents such as DCM (di-chloro-methane) and toluene applied for PMs extraction. The first IL [Aliquat 336] [HSO<sub>4</sub>] prepared and confirmed the formation of final product by using FT-IR and TGA studies. The primary experiment in solvent extraction processing is kinetic effect; 0 to 30 time varied for PMs by using two ILs and confirmed the optimized extraction equilibrium time. This study was conducted for PMs (Pt, Rh and Cu) extraction and separation from each other by using proposed ILs. This is the primary study of the utilizing green solvents such as ILs as an extractant system for Pt, Rh and Cu extraction and possible separation.
Unicystic ameloblastoma with diverse mural proliferation - a hybrid lesion
Jyothi Mahadesh,Dilip Kumar Rayapati,Prathima M Maligi,Prashanth Ramachandra 대한구강악안면방사선학회 2011 Imaging Science in Dentistry Vol.41 No.1
A 46-year-old man was referred to our hospital for treatment, complaining of swelling on the right mandibular molar region. Radiographic examination revealed a well defined multilocular radiolucent lesion with root resorption of right lower anteriors and molars. Following biopsy, a diagnosis of unicystic ameloblastoma of mural type was made and hemimandibulectomy was performed under general anesthesia. Histopathological examination of the surgical specimen exhibited a unicystic ameloblastoma of luminal, intraluminal, and mural type. Intraluminal proliferation was of plexiform pattern and mural proliferation showed unusual histopathological findings, which revealed follicular, acanthomatous areas coexisted with desmoplastic areas. This mural picture was similar to the so-called 'hybrid lesion of ameloblastoma', whose biological profile is not elicited due to the lack of adequate published reports. Two years follow up till date has not revealed any signs of recurrence.
Jyothi, I.,Janardhanam, V.,Kim, J.H.,Yun, H.J.,Jeong, J.C.,Hong, H.,Lee, S.N.,Choi, C.J. Elsevier Sequoia 2016 JOURNAL OF ALLOYS AND COMPOUNDS Vol.688 No.2
The structural changes of Au/Yb contacts to p-type GaN were investigated using X-ray diffraction, X-ray photoemission spectroscopy, and atomic force microscopy as the annealing temperature was varied. The results were used to interpret the electrical properties of Au/Yb Schottky contacts to p-type GaN. A barrier height of 0.84 eV was obtained for the as-deposited Au/Yb/p-type GaN Schottky diode. An optimum barrier height of 1.03 eV was obtained for the 400 <SUP>o</SUP>C annealed Au/Yb/p-type GaN Schottky diode and the barrier height decreased after annealing at temperatures above 500 <SUP>o</SUP>C. Intermixing between the Au and Yb films occurred, implying an interfacial reaction between Au and Yb during deposition followed by a massive diffusion of Au towards GaN with increasing annealing temperature. The increase in the barrier height for the 400 <SUP>o</SUP>C annealed Au/Yb/p-type GaN contact could be associated with the formation of YbN phase, which creates nitrogen vacancies acting as donors in the vicinity of the metal/GaN interface region. The decrease in the barrier height after annealing at 500 and 600 <SUP>o</SUP>C could be due to the evolution of gallide phases, which generate Ga vacancies, leading to an increase in the net hole concentration near the metal/GaN interface.
( Jyothi Rajesh Kumar ),( Chul Joo Kim ),( Ho Sung Yoon ),( Dong Jun Kang ),( Jin Young Lee ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.8
In the present study, extraction and separation possibilities have been established for boron and lithium from Uyuni salar brine. Diols were shown to be effective extraction reagents for boron. The present scientific study was developed with 2, 2, 4-trimethyl-1, 3-pentanediol (TPD) as an extractant system. For fixing the diluent system, various diluents were tested and it was found that chloroform is a better diluent for boron extraction. Further, experimental studies on the extraction equilibrium time, pH influence, and phase ratio effects on boron extraction were conducted and the conditions for boron recovery and lithium separation were optimized. The McCabe Thiele diagram was established to optimize the number of extraction stages for boron extraction. Finally, stripping studies of boron from the loaded organic phase using various salts were performed. Received October 31, 2014)