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MicroRNA-203 As a Stemness Inhibitor of Glioblastoma Stem Cells
Deng, Yifan,Zhu, Gang,Luo, Honghai,Zhao, Shiguang Korean Society for Molecular and Cellular Biology 2016 Molecules and cells Vol.39 No.8
Glioblastoma stem cells (GBM-SCs) are believed to be a subpopulation within all glioblastoma (GBM) cells that are in large part responsible for tumor growth and the high grade of therapeutic resistance that is so characteristic of GBM. MicroRNAs (miR) have been implicated in regulating the expression of oncogenes and tumor suppressor genes in cancer stem cells, including GBM-SCs, and they are a potential target for cancer therapy. In the current study, miR-203 expression was reduced in $CD133^+$ GBM-SCs derived from six human GBM biopsies. MicroRNA-203 transfected GBM-SCs had reduced capacity for self-renewal in the cell sphere assay and increased expression of glial and neuronal differentiation markers. In addition, a reduced proliferation rate and an increased rate of apoptosis were observed. Therefore, miR-203 has the potential to reduce features of stemness, specifically in GBM-SCs, and is a logical target for GBM gene therapy.
MicroRNA-203 As a Stemness Inhibitor of Glioblastoma Stem Cells
Gang Zhu,Yifan Deng,Honghai Luo,Shiguang Zhao 한국분자세포생물학회 2016 Molecules and cells Vol.39 No.8
Glioblastoma stem cells (GBM-SCs) are believed to be a subpopulation within all glioblastoma (GBM) cells that are in large part responsible for tumor growth and the high grade of therapeutic resistance that is so characteristic of GBM. MicroRNAs (miR) have been implicated in regulating the expression of oncogenes and tumor suppressor genes in cancer stem cells, including GBM-SCs, and they are a potential target for cancer therapy. In the current study, miR-203 expression was reduced in CD133+ GBM-SCs derived from six human GBM biopsies. MicroRNA-203 transfected GBM-SCs had reduced capacity for self-renewal in the cell sphere assay and increased expression of glial and neuronal differentiation markers. In addition, a reduced proliferation rate and an increased rate of apoptosis were observed. Therefore, miR-203 has the potential to reduce features of stemness, specifically in GBM-SCs, and is a logical target for GBM gene therapy.
Effect of 3C-SiC Intermediate Layer in GaN-Based Light Emitting Diodes Grown on Si(111) Substrate
Youhua Zhu,Meiyu Wang,Yi Li,Shuxin Tan,Honghai Deng,Xinglong Guo,Haihong Yin,Takashi Egawa 대한금속·재료학회 2017 ELECTRONIC MATERIALS LETTERS Vol.13 No.2
GaN-based light emitting diodes (LEDs) have been grown by metalorganicchemical vapor deposition on Si(111) substrate with and without3C-SiC intermediate layer (IL). Structural property has been characterizedby means of atomic force microscope, X-ray diffraction, andtransmission electron microscope measurements. It has been revealedthat a significant improvement in crystalline quality of GaN and superlatticeepitaxial layers can be achieved by using 3C-SiC as IL. Regardingof electrical and optical characteristics, it is clearly observed that theLEDs with its IL have a smaller leakage current and higher light outputpower comparing with the LEDs without IL. The better performance ofLEDs using 3C-SiC IL can be contributed to both of the improvementsin epitaxial layers quality and light extraction efficiency. As aconsequence, in terms of optical property, a double enhancement of thelight output power and external quantum efficiency has been realized.