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RISS 인기검색어
- 검색키워드
- 저자 : Dae-Myeong GEUM (검색결과 17 건)
- 무료
- 기관 내 무료
- 유료
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Dae-Myeong Geum,Seung Heon Shin,Sung-Min Hong,Jae-Hyung Jang IEEE 2015 IEEE electron device letters Vol.36 No.4
<P>Metal-semiconductor-metal (MSM) varactor diodes based on InAlN/GaN high electron mobility transistor structures were fabricated and characterized. Among the MSM varactors with gate lengths ranging from 90 to 270 nm and gate distances of 2 and 4 μm, the highest performance was obtained from the MSM varactor with gate length of 90 nm and gate spacing of 2 μm. The capacitance switching ratio (C<SUB>max</SUB>/C<SUB>min</SUB>) of 2.31 together with a high cutoff frequency (f<SUB>o</SUB>) of 308 GHz was demonstrated. The calculated figures of merit (FOMs), which were defined to be f<SUB>o</SUB> · C<SUB>max</SUB>/C<SUB>min</SUB> for the comparison of devices performance, were 523 and 769 GHz for devices with gate spacing of 4 and 2 μm, respectively. The FOMs were not dependent on gate length of the devices, but highly dependent on gate spacing.</P>
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Low-Subthreshold-Slope Asymmetric Double-Gate GaAs-on-Insulator Field-Effect-Transistors on Si
Kim, SangHyeon,Geum, Dae-Myeong,Kim, Seong Kwang,Kim, Hyung-Jun,Song, Jin Dong,Choi, Won Jun IEEE 2016 IEEE electron device letters Vol.37 No.10
<P>In this letter, we have demonstrated low-subthreshold-slope (SS) asymmetric double-gate (DG) GaAs-on-insulator field-effect-transistors (FETs) on Si substrates via wafer bonding and epitaxial liftoff techniques. We found that DG FETs show lower SS than single-gate FETs all over the range of the drain current. A minimum value of SS was 68 mV/decade, which is very close to the theoretical limit. In addition, the achieved SS value was a record-low among the reported GaAs transistors so far.</P>
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Seung Heon Shin,Dae-Myeong Geum,Jae-Hyung Jang IEEE 2014 IEEE electron device letters Vol.35 No.2
<P>Metal-semiconductor-metal varactor diodes were realized on the 2-D electron gas (2DEG) of an In0.7Ga0.3As HEMT structure. The electrical performances, such as capacitance switching ratio (Cmax/Cmin) and cutoff frequency (fo), were determined by using S-parameters measurements up to 40 GHz. Devices with 130-nm gate length and a gate distance of 2 μm exhibited a cutoff frequency (fo) of 908 GHz and a capacitance switching ratio of 1.4. The corresponding figure of merit, which is defined as fo·Cmax/Cmin, was 1.29 THz.</P>
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Sang Hyeon Kim,Dae-Myeong Geum,Min-Su Park,Won Jun Choi IEEE 2015 IEEE electron device letters Vol.36 No.5
<P>In this letter, we have investigated electrical properties of metal-oxide-semiconductor (MOS) gate stack of Pt/Y2O3/In0.53Ga0.47As under different annealing conditions. We have found that proper annealing step significantly improves MOS interfacial properties of Pt/Y2O3/In0.53Ga0.47As MOS capacitors. Finally, we have realized MOS interface with a low density of trap state (D-it) of 4 x 10(12) eV(-1) . cm(-2) and hysteresis of 15 mV using postmetallization annealing at 350 degrees C. Furthermore, we also first demonstrated In0.53Ga0.47As-on-insulator (-OI) transistors with Y2O3 buried oxide layer using developed MOS interface. Fabricated In0.53Ga0.47As-OI transistors show good I-V characteristics and high peak mobility of similar to 2000 cm(2)/Vs.</P>
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Park, Min-Su,Geum, Dae-Myeong,Kyhm, Ji Hoon,Song, Jin Dong,Kim, SangHyeon,Choi, Won Jun Optical Society of America 2015 Optics express Vol.23 No.21
<P>We report fabrication and optical characteristics of an InGaP/GaAs heterojunction phototransistor (HPT) transferred to a Si substrate by a metal wafer bonding (MWB) and epitaxial lift-off (ELO) process at room temperature. An intermediate Pt/Au double layer between the HPT layer and Si provided a very smooth surface by which to achieve the MWB, and excellent durability against the acid solution during the ELO process. These processes were observed using scanning electron microscope (SEM) and atomic force microscopy (AFM). While the results on a low temperature photoluminescence (LTPL) signal and high resolution x-ray diffraction (HRXRD) rocking curve of the bonded device film implied a defect-free bonding, a very low collector dark current of the fabricated HPT was observed. The optical performance of a bonded InGaP/GaAs HPT on Si, operating at 635 nm wavelength is also investigated.</P>
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