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- 저자 : Chebotkevich, L.A. (검색결과 2 건)
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Hybrid magnetic anisotropy <i>[Co/Ni]<sub>15</sub> </i>/<i>Cu/[Co/Pt]<sub>4</sub> </i> spin-valves
Kolesnikov, A.G.,Wu, Hao,Stebliy, M.E.,Ognev, A.V.,Chebotkevich, L.A.,Samardak, A.S.,Han, Xiufeng Elsevier 2018 Journal of magnetism and magnetic materials Vol.449 No.-
<P><B>Abstract</B></P> <P>Thin film multilayer heterostructures consisting of two magnetically coupled stacks, one with in-plane and the second one with out-of-plane magnetic anisotropies, are very promising hybrid magnetic anisotropy materials for spintronics. Here we present results on magnetic and magnetoresistance properties of <I>[Co/Ni]<SUB>15</SUB> </I> (in-plane)/<I>Cu/[Co/Pt]<SUB>4</SUB> </I> (out-of-plane) spin-valves with hybrid magnetic anisotropy. We demonstrate that the saturation field and magnetoresistance depend on the thickness of the copper interlayer (<I>t<SUB>Cu</SUB> </I>) and they have peak values at <I>t<SUB>Cu</SUB> </I> = 2.5 nm, where the antiferromagnetic coupling is maximum. We reveal that an indirect exchange coupling between <I>[Co/Ni]<SUB>n</SUB> </I> and <I>[Co/Pt]<SUB>m</SUB> </I> stacks decreases the magnetization switching fields making these systems suitable for low-field sensor, spin torque oscillator and bit patterned media applications.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Hybrid anisotropy spin-valves (HAS) were systematically studied. </LI> <LI> HAS with AFM coupling have peak values of <I>H<SUB>s</SUB> </I> and <I>MR</I>. </LI> <LI> Simulated M-H and MR loops correctly describe the experimental data. </LI> <LI> AFM coupled HAS have the increased field ranges and linear dependence of MR. </LI> </UL> </P>
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Kolesnikov, A.G.,Samardak, A.S.,Stebliy, M.E.,Ognev, A.V.,Chebotkevich, L.A.,Sadovnikov, A.V.,Nikitov, S.A.,Kim, Y.J.,Cha, I.H.,Kim, Y.K. North-Holland Pub. Co 2017 Journal of magnetism and magnetic materials Vol.429 No.-
One of the major societal challenges is reducing the power consumption of information technology (IT) devices and numerous data centers. Distinct from the current approaches based on switching of magnetic single-domain nanostructures or on movement of domain walls under high currents, an original magnetic skyrmion technology offers ultra-low power, fast, high-density, and scalable spintronic devices, including non-volatile random access memory. Using data-driven micromagnetic simulations, we demonstrate the possibility of spontaneous nucleation and stabilization of different skyrmionic states, such as skyrmions, merons, and meron-like configurations, in heavy metal/ferromagnetic nanodisks with the interfacial Dzyaloshinskii-Moriya interaction (iDMI) as a result of quasi-static magnetization reversal only. Since iDMI is not easily modulated in real systems, we show that skyrmion stabilization is easily achievable by manipulating magnetic anisotropy, saturation magnetization, and the diameters of nanodisks. The state diagrams, presented in terms of the topological charge, allow to explicitly distinguish the intermediate states between skyrmions and merons and can be used for developing a skyrmionic medium, which has been recently proposed to be a building block for future spin-orbitronic devices.
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