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Bukke, Ravindra Naik,Avis, Christophe,Naik, Mude Narendra,Jang, Jin IEEE 2018 IEEE electron device letters Vol.39 No.3
<P>We report the effect of purification of ZrO<SUB>x</SUB> precursor on the performance of solution processed amorphous indium–zinc–tin oxide thin-film transistors with a ZrO<SUB>x</SUB> gate insulator, which is processed at the maximum temperature of 300 °C in air. By purification, the saturation mobility ( <TEX>$\mu _{\textit {sat}}$</TEX>) increases from 2.45 ± 0.83 to 15.42 ± 4.01 cm<SUP>2</SUP>V<SUP>−1</SUP>s<SUP>−1</SUP>, subthreshold swing decreases from 141.44 ± 14.08 to 87.90 ± 11.05 mV/decade and drain current ON/OFF ratio increases from ~10<SUP>7</SUP> to ~10<SUP>9</SUP>. The leakage currents are remarkably reduced by using purified ZrO<SUB>x</SUB> as a gate insulator. The improvement is mainly due to the reduced impurities and less oxygen vacancies in ZrO<SUB>x</SUB>.</P>
Bukke, Ravindra Naik,Avis, Christophe,Jin Jang IEEE 2016 IEEE electron device letters Vol.37 No.4
<P>We report the effect of water-based Y2O3 passivation on the performances of solution-processed amorphous indium-zinc-tin oxide (a-IZTO) thin-film transistors (TFTs) employing a solution-processed ZrOx gate insulator. The Y2O3 passivation increases the saturation mobility (mu(sat)) and the current ratio (I-ON/I-OFF)rom 1.64 +/- 0.70 to 4.75 +/- 0.87 cm(2)V(-1)s(-1) and from 10(8) to 10(9), respectively, and decreases the hysteresis voltage (V-H), subthreshold swing, and threshold voltage (V-th) from 0.09 +/- 0.09 to 0 V, from 147.44 +/- 44.55 to 114.29 +/- 15.06 mV/decade, and from 0.54 +/- 0.21 to 0.42 +/- 0.23 V, respectively. The threshold voltage shift under positive gate bias stress is also reduced from 1.78 to 0 V. The improvements can be explained by the diffusion of Y into a-IZTO. Yttrium concentration in the a-IZTO active layer is found to be similar to 16 at.%, which leads to the decrease in oxygen vacancy and hydroxyl group concentrations, and to the increase in M-O-M bond concentration at the a-IZTO/ZrOx and a-IZTO/Y2O3 interfaces.</P>