http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
- 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
- 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
RISS 인기검색어
- 검색키워드
- 저자 : Bingyang Li (검색결과 4 건)
- 무료
- 기관 내 무료
- 유료
-
Associations among Genetic Variants and Intracranial Aneurysm in a Chinese Population
Bingyang Li,Chongyu Hu,Junyu Liu,Xin Liao,Jiayu Xun,Manqian Xiao,Junxia Yan 연세대학교의과대학 2019 Yonsei medical journal Vol.60 No.7
Purpose: Genome-wide association studies (GWAS) have revealed that common variants on or near EDNRA, HDAC9, SOX17,RP1, CDKN2B-AS1, and RBBP8 genes are associated with intracranial aneurysm (IA) in European or Japanese populations. However,due to population heterogeneity, whether these loci are associated with IA pathogenesis in Chinese individuals is still unknown. The purpose of this study was to investigate associations among GWAS-identified loci and risk of IA in a Chinese population. Materials and Methods: A total of 765 individuals (including 230 IA patients and 535 controls) were involved in this study. Twelvesingle nucleotide polymorphisms (SNPs) of candidate loci were genotyped using the Sequenom MassARRAY platform. Associationswere analyzed using univariate or multivariate logistic regression analysis. Results: SNPs in CDKN2B-AS1 (especially rs10757272) showed significant associations with IA in dominant and additive models[odds ratio (OR), 2.99 and 1.43; 95% confidence interval (CI), 1.44–6.24 and 1.10–1.86, respectively]. A SNP near HDAC9 (rs10230207)was associated with IA in the dominant model (OR, 1.42; 95% CI, 1.01–1.99). One SNP near RP1 (rs1072737) showed a protectiveeffect on IA in the dominant model (OR, 0.66; 95% CI, 0.46–0.95), while another SNP in RP1 (rs9298506) showed a risk effect onIA in a recessive model (OR, 3.82; 95% CI, 1.84–7.91). No associations were observed among common variants near EDNRA,SOX17, or RBBP8 and IA. Conclusion: These data partially confirmed earlier results and showed that variants in CDKN2B-AS1, RP1, and HDAC9 could begenetic susceptibility factors for IA in a Chinese population.
-
Liming Hu,Bingyang Li,Xin Liao,Junxia Yan 연세대학교의과대학 2020 Yonsei medical journal Vol.61 No.5
Purpose: Inflammatory cytokines are thought to be involved in the pathogenesis of intracranial aneurysm (IA), although results among studies in the literature are inconsistent. This article sought to review studies on the associations among polymorphisms in inflammatory cytokine genes and IA risk and to provide recommendations for future research. Materials and Methods: A systematic search of PubMed, Embase, and Web of Science was conducted up to August 4, 2019. The associations between polymorphisms of inflammatory cytokine genes and IA risk were estimated by pooled odds ratios (ORs) and 95% confidence intervals (CIs). Subgroup analyses were performed according to race. Qualitative systematic review was conducted for variants that were studied in only one study. All analyses were performed using STATA 12.0. Results: 13 studies investigating the associations between polymorphisms in five inflammatory cytokine genes (TNF-α, IL-1α, IL-1β, IL6, and IL-12B) and IA were reviewed. Combined results showed that the A allele of TNF-α rs1800629 polymorphism has a protective effect against IA (dominant model: OR=0.65, 95% CI=0.47–0.89, p=0.007). No associations were identified between polymorphisms in IL-1α rs1800587, IL-1β rs16944, IL6 rs1800795 and rs1800796, or IL-12B rs3212227 and IA risk. Conclusion: This review demonstrated an association between TNF-α rs1800629 polymorphism and IA in Caucasians, illustrating the potentially important role of genes involved in inflammation in IA.
-
Evaluation of Frequency-Dependent On-Resistance of GaN Devices at High Frequency
Kangping Wang,Bingyang Li,Zhiyuan Qi,Laili Wang,Xu Yang,Aici Qiu 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
The switching frequency of GaN-based power converters has been pushed to several MHz and even higher. At such high frequencies, this paper finds that the onresistance of GaN devices may be much higher than their DC values, especially for the devices with low on-resistance. The frequency-dependent characteristics of on-resistance are studied through electrical and thermal experiments for the first time in this paper. A simplified finite-element-simulation model is proposed to illustrate the mechanism of the frequency-dependent characteristics. The results show that the frequency-dependent characteristics of the on-resistance are closely related to the current distribution inside the GaN device and affected by the layout. In addition, two same GaNbased 10MHz DC-DC converters were designed to operate under the same conditions, and the only difference comes from the layout of GaN devices. The experimental results show that the efficiency of the converter with optimized layout is improved by 2% compared to that with conventional layout.
-
연관 검색어 추천
이 검색어로 많이 본 자료
활용도 높은 자료
