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Vinayakprasanna N. Hegde,K.C. Praveen,T.M. Pradeep,N. Pushpa,John D. Cressler,Ambuj Tripathi,K. Asokan,A.P. Gnana Prakash 한국원자력학회 2019 Nuclear Engineering and Technology Vol.51 No.5
The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous (P7þ)and 80 MeV nitrogen (N6þ) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGeHBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ IeV characteristics likeGummel characteristics, excess base current (DIB), net oxide trapped charge (NOX), current gain (hFE),avalanche multiplication (M 1), neutral base recombination (NBR) and output characteristics (IC-VCE)were analysed before and after irradiation. The significant degradation in device parameters wasobserved after 100 MeV P7þ and 80 MeV N6þ ion irradiation. The 100 MeV P7þ ions create more damagein the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more whencompared to 80 MeV N6þ. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from50 C to 400 C in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature andisochronal annealing in total recovery.