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PECVD 방법으로 증착한 SiOx(x<2) 박막의 광학적 특성 규명
김영일 ( Young Ill Kim ),박병열 ( Byoung Youl Park ),김은겸 ( Eun Kyeom Kim ),한문섭 ( Mun Sup Han ),석중현 ( Jung Hyun Sok ),박경완 ( Kyoung Wan Park ) 대한금속재료학회(구 대한금속학회) 2011 대한금속·재료학회지 Vol.49 No.9
Silicon oxide thin films were deposited by using a plasma-enhanced chemical-vapor deposition technique to investigate the light emission properties. The photoluminescence characteristics were divided into two categories along the relative ratio of the flow rates of SiH4 and N2O source gases, which show light emission in the broad/visible range and a light emission peak at 380 nm. We attribute the broad/visible light emission and the light emission peak to the quantum confinement effect of nanocrystalline silicon and the Si=O defects, respectively. Changes in the photoluminescence spectra were observed after the post-annealing processes. The photoluminescence spectra of the broad light emission in the visible range shifted to the long wavelength and were saturated above an annealing temperature of 900℃ or after 1 hour annealing at 970℃. However, the position of the light emission peak at 380 nm did not change at all after the post-annealing processes. The light emission intensities at 380 nm initially increased, and decreased at annealing temperatures above 700℃ or after 1 hour annealing at 700℃. The photoluminescence behaviors after the annealing processes can be explained bythe size change of the nanocrystalline silicon and the density change of Si=O defect in the films, respectively. These results support the possibility of using a silicon-based light source for Si-optoelectronic integrated circuits and/or display devices.
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