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기판과 부도체층을 개선한 FM / Al₂O₃ / FM (FM=Ferromagnet) 자기터널링 접합제작 및 자기수송에 관한 연구
변상진(S. J. Byeun),박병기(P. K. Park),장인우(I. W. Jang),염민수(M. S. Youm),이재형(J. H. Lee),이긍원(K. W. Rhie) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.5
The effect of substrate and oxidization time on substrate/Py/Al₂O₃/Co (Py=Ni_(81)Fe_(19) tunnel junction was studied. Samples were prepared without breaking vacuum by changing shadow masks in-situ. The resistance of tunnel junctions increased, but measured MR decreased with oxidization time. Negative MR was observed for samples of tunnel resistivity lower than 0.17 MΩ (㎛)². MR resistivity decreased with the change of substrates in the order of thermally oxidized Si(111), Si(100), Coring Glass 2948, Coming Glass 7059. Sign change and the variation of MR was explained with non uniform current effect.
Permalloy / Cu 다층막 자화반전의 미세 구조
염민수(M-S Youm),장인우(I-W Jang),변상진(S-J Byeun),이제형(J-H Lee),박병기(B-K Park),이긍원(K. Rhie) 한국자기학회 2001 韓國磁氣學會誌 Vol.11 No.5
Magnetoresistance and Planar Hall effect of Glass/Ni_(83)Fe_(17)(20 Å)/[Cu(20 Å)Ni_(83)Fe_(17)(20 Å)]_(50) multilayer were measured. Repeated saw tooth like planar Hall effect signal was observed in the range of magnetization reversal process, while no sign of such saw tooth was observed in Magnetoresistance diagram. For the reason of saw tooth like signal, it is supposed that subsequent abrupt domain wall motion of each magnetic layer in the process of magnetization reversal process was observed in planar Hall effect in transverse direction to the current direction. This fine structure of planar Hall effect was observed for applied fields in any direction. Magnetoresistance curve did not show this fine structure of magnetization reversal, of course, since only net magnetization of each layer has to do with the resistivity. Extended research on the reason of this sawtooth like signal should be conducted.